EPITAXIAL PLANAR PNP/NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)

SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • Including two devices in TESV. (Thin Extereme Super mini type with 5 pin.) • With Built-in bias resistors. • Simplify circuit design. • Reduce a quantity of parts and manufacturing process.

EPITAXIAL PLANAR NPN/PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)

SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • Including two devices in USV. (Ultra Super mini type with 5 leads.) • With Built-in bias resistors. • Simplify circuit design. • Reduce a quantity of parts and manufacturing process.

EPITAXIAL PLANAR PNP/NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)

EPITAXIAL PLANAR PNP/NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)

SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • Including two devices in TESV. (Thin Extereme Super mini type with 5 pin.) • With Built-in bias resistors. • Simplify circuit design. • Reduce a quantity of parts and manufacturing process.

EPITAXIAL PLANAR NPN/PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)

SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • Including two devices in USV. (Ultra Super mini type with 5 leads.) • With Built-in bias resistors. • Simplify circuit design. • Reduce a quantity of parts and manufacturing process.

Complex BRT, USV, 50V, 0.1A, -50V, -0.1A

• With Built-in Bias Resistors.\n• Simplify Circuit Design.\n• Reduce a Quantity of Parts and Manufacturing Process;

HIGH EFFICIENCY RECTIFIERS(1.0A,50-400V)

Switchmode Power Rectifiers HIGH EFFICIENCY RECTIFIERS 1.0 AMPERES 50 -- 400 VOLTS

DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60– 80– 100 VOLTS 80 WATTS . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain —hFE= 2500 (Typ) @ IC= 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 30 mAdc

WIDE BAND AMPLIFIER CHIPS

DESCRIPTION PPG100P and PPG101P are GaAs integrated circuits designed as wide band amplifiers. Both devices are available in chip form. PPG100P is low noise amplifier from 50 MHz to 3 GHz and PPG101P is a medium power amplifier in the same frequency band. These devices are most suitable for the

Operational Amplifiers

文件：509.25 Kbytes Page：17 Pages

Operational Amplifiers

文件：509.25 Kbytes Page：17 Pages