XENSIV ™ - KP236基于电容原理的模拟气压传感器

KP236：微型模拟BAP压力传感器。电容原理，BiCMOS技术单片集成信号调理。将 40-115 kPa 压力范围转换为 0.5-4.5 V 电压范围。绿色 SMD 外壳。非常适合测量汽车、工业和消费应用中的气压。高精度和高灵敏度。 • 高精度压力传感\n• 宽温度范围（-40°C 至 125°C）\n• “绿色”8 针 SMD 外壳\n• 汽车级认证;

Analog Absolute Pressure Sensor

文件：1.7842 Mbytes Page：25 Pages

XENSIV ™ - KP236N6165 模拟气压传感器，符合汽车标准，具有较大的温度范围

The KP236N6165 is a miniaturized Analog Barometric Air Pressure Sensor IC based on a capacitive principle. It is surface micromachined with a monolithic integrated signal conditioning circuit implemented in BiCMOS technology. The sensor converts a pressure into an analog output signal. The calibrate • High precision pressure sensing (± 1.0 kPa)\n• Ratiometric analog output\n• Large temperature range (-40 °C to 125 °C)\n• Broken wire detection\n• “Green” 8 pin SMD housing\n• Automotive qualified\n\n优势:;

Analog Absolute Pressure Sensor

文件：1.78453 Mbytes Page：25 Pages

Analog Absolute Pressure Sensor

文件：1.78453 Mbytes Page：25 Pages

压力传感器

封装/外壳：8-SMD 模块 包装：托盘 描述：IC ANLG BAROMETRIC SNSR DSOF8-16 传感器，变送器 压力传感器、变送器

包装：盒 描述：BAP PRESSURE SENSOR 2GO KIT 开发板，套件，编程器 评估板 - 传感器

Analog Absolute Pressure Sensor

文件：1.7842 Mbytes Page：25 Pages

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION The BD235 and BD237 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package inteded for use in medium power linear and switching applications. The complementary PNP types are BD236 and BD238 respectively. ■ SGS-THOMSON PREFERRED SALESTYPES

NPN video transistors

DESCRIPTION NPN video transistor in a SOT223 plastic package. PNP complements: BFQ256 and BFQ256A. FEATURES • High breakdown voltages • Low output capacitance • High gain bandwidth • Good thermal stability • Gold metallization ensures excellent reliability • Surface mounting. APPLICATIONS

NPN video transistors

DESCRIPTION NPN video transistor in a SOT223 plastic package. PNP complements: BFQ256 and BFQ256A. FEATURES • High breakdown voltages • Low output capacitance • High gain bandwidth • Good thermal stability • Gold metallization ensures excellent reliability • Surface mounting. APPLICATIONS

Silicon NPN Transistor Final RF Power Output (PO = 16W, 27MHz, SSB)

The NTE236 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on HF band mobile radio applications.

SILICON TRIACS

SILICON TRIACS ● High Current Triacs ● 12 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 50 mA (Quadrants 1 - 3)