N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES • VDSS=600V, I

N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES • VDSS=600V, I

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包装：盒 描述：TERM BLK 11P SIDE ENT 6.35MM PCB 连接器，互连器件 线对板

包装：散装 描述：TERM BLK 11P SIDE ENT 6.35MM PCB 连接器，互连器件 线对板

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N CHANNEL MOS FIELD EFFECT TRANSISTOR

文件：388.24 Kbytes Page：6 Pages

N CHANNEL MOS FIELD EFFECT TRANSISTOR

文件：390.31 Kbytes Page：6 Pages