| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
KMB2D0N60SA | 丝印代码:KND;N-Ch Trench MOSFET This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for portable for portable equipment and SMPS. | KECKEC(Korea Electronics) 开益禧无锡开益禧半导体有限公司 | ||
KMB2D0N60SA | General Trench MOSFETs, SOT-23, 60V, 2A • Fast switching time\n• Low on resistance and gate charge\n• Suitable for using DC/DC Converter, Synchronous Rectification and a load switch; | KECKEC(Korea Electronics) 开益禧无锡开益禧半导体有限公司 | ||
KMB2D0N60SA | 丝印代码:KND;N-Ch Trench MOSFET 文件:86.12 Kbytes Page:5 Pages | KECKEC(Korea Electronics) 开益禧无锡开益禧半导体有限公司 | ||
N-Ch Trench MOSFET 文件:86.12 Kbytes Page:5 Pages | KECKEC(Korea Electronics) 开益禧无锡开益禧半导体有限公司 | |||
N-Ch Trench MOSFET 文件:854.22 Kbytes Page:5 Pages | KECKEC(Korea Electronics) 开益禧无锡开益禧半导体有限公司 | |||
N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode power supplies. FEATURES VDSS= 600V, ID= 2.0A Drain-Source ON Re | KECKEC(Korea Electronics) 开益禧无锡开益禧半导体有限公司 | |||
N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode power supplies. FEATURES VDSS= 600V, ID= 2.0A Drain-Source ON Re | KECKEC(Korea Electronics) 开益禧无锡开益禧半导体有限公司 | |||
N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode power supplies. FEATURES VDSS= 600V, ID= 2.0A Drain-Source ON Re | KECKEC(Korea Electronics) 开益禧无锡开益禧半导体有限公司 |
KMB2D0N60SA产品属性
- 类型
描述
- AEC-Q:
N
- Package:
SOT-23
- Polarity:
N
- BVDSS [V]:
60
- ID [A]:
2
- PD [W]:
1.25
- RDS(ON) @10V[Ω]:
0.16
- RDS(ON) @4.5V[Ω]:
0.22
- Qg [nC]:
4.8
- Vth_Min[V]:
1.5
- Ciss[pF]:
240
- ESD DIODE:
N
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
KEC |
2025+ |
SOT-23 |
5000 |
原装进口价格优 请找坤融电子! |
|||
KEC |
24+ |
SOT-23 |
9600 |
原装现货,优势供应,支持实单! |
|||
可定KEC |
25+ |
SOT23 |
10000 |
原装现货假一罚十 |
|||
KEC |
2019+PB |
SOT-23 |
6650 |
原装正品 可含税交易 |
|||
KEC |
26+ |
SOT-23 |
3000 |
专注全新正品,优势现货供应 |
|||
KEC |
26+ |
SOT-23 |
43600 |
全新原装现货,假一赔十 |
|||
KEC |
23+ |
SOT23-3 |
50000 |
全新原装正品现货,支持订货 |
|||
KEC |
2450+ |
SOT23-3 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
KEC |
25+ |
SOT23 |
30000 |
十七年VIP会员,诚信经营,一手货源,原装正品可零售! |
|||
KEC |
26+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
KMB2D0N60SA规格书下载地址
KMB2D0N60SA参数引脚图相关
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- KMB6D0DN35QB
- KMB6D0DN35QA
- KMB6D0DN30QA_08
- KMB6D0DN30QA
- KMB6-21-A10SN
- KMB6-21-A10PW
- KMB6-21-A10PV
- KMB6-21-A10PN-A101
- KMB6-21-A10PN
- KMB5D5NP30Q
- KMB5D0NP40Q
- KMB4D8DN55Q
- KMB4D5DN60QA
- KMB4D0N30SA_08
- KMB4D0N30SA
- KMB3D9N40TA
- KMB3D5PS30QA
- KMB3D5N40SA
- KMB3D0P30SA
- KMB36F
- KMB35S
- KMB35F
- KMB34S
- KMB34F
- KMB33S
- KMB33F
- KMB32S
- KMB32M
- KMB32F
- KMB325S
- KMB325M
- KMB325F
- KMB321
- KMB320S
- KMB320F
- KMB315S
- KMB315F
- KMB310S
- KMB310F
- KMB2D0N60SA_08
- KMB28S
- KMB28F
- KMB-28
- KMB-27
- KMB26S
- KMB26F
- KMB25S
- KMB25F
- KMB24S
- KMB24F
- KMB23S
- KMB23F
- KMB239
- KMB22S
- KMB22M
- KMB22F
- KMB225S
- KMB225M
- KMB225F
- KMB220S
- KMB220F
- KMB18F
- KMB16F
- KMB14F
- KMB12F
- KMB1-21-A10SV
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- KMB-12
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- KMB1117-3.3
- KMB1117-2.5
- KMB1117-1.9
- KMB1117-1.8
- KMB1117-1.5
- KMB1117
- KMB110F
- KMB0A-21-A10SN-A101
- KMB080N75PA
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DdatasheetPDF页码索引
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