位置：首页 > IC中文资料第10339页 > KMB2D0N60SA
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
KMB2D0N60SA | N-Ch Trench MOSFET This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for portable for portable equipment and SMPS. | KEC KEC(Korea Electronics) |   | |
KMB2D0N60SA | N-Ch Trench MOSFET 文件：86.12 Kbytes Page：5 Pages | KEC KEC(Korea Electronics) | | |
KMB2D0N60SA | General Trench MOSFETs, SOT-23, 60V, 2A | KEC KEC(Korea Electronics) | | |
N-Ch Trench MOSFET 文件：86.12 Kbytes Page：5 Pages | KEC KEC(Korea Electronics) | | ||
N-Ch Trench MOSFET 文件：854.22 Kbytes Page：5 Pages | KEC KEC(Korea Electronics) | | ||
N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode power supplies. FEATURES VDSS= 600V, ID= 2.0A Drain-Source ON Re | KEC KEC(Korea Electronics) | | ||
N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode power supplies. FEATURES VDSS= 600V, ID= 2.0A Drain-Source ON Re | KEC KEC(Korea Electronics) | | ||
N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode power supplies. FEATURES VDSS= 600V, ID= 2.0A Drain-Source ON Re | KEC KEC(Korea Electronics) | | ||
N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode power supplies. FEATURES VDSS= 600V, ID= 2.0A Drain-Source ON Re | KEC KEC(Korea Electronics) | |
KMB2D0N60SA产品属性
- 类型
描述
- 型号
KMB2D0N60SA
- 制造商
KEC
- 制造商全称
KEC(Korea Electronics)
- 功能描述
N-Ch Trench MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
KEC |
24+ |
NA/ |
6630 |
原装现货,当天可交货,原型号开票 |
|||
KEC |
24+ |
SOT-23 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
KEC |
24+ |
SOT-23 |
990000 |
明嘉莱只做原装正品现货 |
|||
KEC |
19+ |
SOT-23 |
200000 |
||||
KEC |
23+ |
SOT-23 |
6000 |
原装正品，支持实单 |
|||
KEC |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
|||
KEC |
10+ |
SOT-23 |
197 |
进口原装公司现货 |
|||
KEC |
25+ |
SOT-23 |
39585 |
KEC全新特价KMB2D0N60SA-RTK/P即刻询购立享优惠#长期有货 |
|||
KEC |
1602+ |
SOT23 |
2860 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
KEC |
2019+PB |
SOT-23 |
6650 |
原装正品 可含税交易 |
KMB2D0N60SA芯片相关品牌
KMB2D0N60SA规格书下载地址
KMB2D0N60SA参数引脚图相关
- l6203
- l603
- l491
- l482
- l478
- l3g4200d
- l393
- l32
- l298n
- l298
- l297
- l295
- l293d
- l234
- l101
- l100
- ku波段
- kt250
- kse13005
- ks20
- KMB6D0DN35QB
- KMB6D0DN35QA
- KMB6D0DN30QA_08
- KMB6D0DN30QA
- KMB6-21-A10SN
- KMB6-21-A10PW
- KMB6-21-A10PV
- KMB6-21-A10PN-A101
- KMB6-21-A10PN
- KMB5D5NP30Q
- KMB5D0NP40Q
- KMB4D8DN55Q
- KMB4D5DN60QA
- KMB4D0N30SA_08
- KMB4D0N30SA
- KMB3D9N40TA
- KMB3D5PS30QA
- KMB3D5N40SA
- KMB3D0P30SA
- KMB36F
- KMB35S
- KMB35F
- KMB34S
- KMB34F
- KMB33S
- KMB33F
- KMB32S
- KMB32M
- KMB32F
- KMB325S
- KMB325M
- KMB325F
- KMB321
- KMB320S
- KMB320F
- KMB315S
- KMB315F
- KMB310S
- KMB310F
- KMB2D0N60SA_08
- KMB28S
- KMB28F
- KMB-28
- KMB-27
- KMB26S
- KMB26F
- KMB25S
- KMB25F
- KMB24S
- KMB24F
- KMB23S
- KMB23F
- KMB239
- KMB22S
- KMB22M
- KMB22F
- KMB225S
- KMB225M
- KMB225F
- KMB220S
- KMB220F
- KMB18F
- KMB16F
- KMB14F
- KMB12F
- KMB1-21-A10SV
- KMB1-21-A10SN
- KMB-12
- KMB1117-ADJ
- KMB1117-5.0
- KMB1117-3.3
- KMB1117-2.5
- KMB1117-1.9
- KMB1117-1.8
- KMB1117-1.5
- KMB1117
- KMB110F
- KMB0A-21-A10SN-A101
- KMB080N75PA
KMB2D0N60SA数据表相关新闻
KLMBG2JETD-B041中文资料三星存储芯片现货供应中文资料PDF
KLMBG2JETD-B041 中文资料 三星存储芯片 现货供应 中文资料 PDF
2022-12-28KLUCG4J1ZD-B0CP
KLUCG4J1ZD-B0CP RICHTEK/立锜 2020 QFN KLUCG4J1ED-B0C1 RICHTEK/立锜 2018+ QFN KLUCG4J1ZD-B0CQ RICHTEK/立锜 2020 QFN KLUCG4J1BB-B0B1 RICHTEK/立锜 2018+ QFN TYD0GH121661RA 内存芯片 MICRON/美光 2019+ BGA TYD0GH121661RA MICRON/美光 2019+ BGA LM317K MICRON/美光 2020 BGA MMZ0603D560CT000 MICRON/美光
2021-5-26KNP1/2W-10Ω±5% T
属性 参数值 商品目录 绕线电阻 功率 1/2W 精度 ±5%_ 阻值（欧姆） 10
2020-9-8KNP1/2W-100Ω±5% T
属性 参数值 商品目录 绕线电阻 功率 1/2W 精度 ±5%_ 阻值（欧姆） 100
2020-9-8KM68U4000CLTGI-10L，KPT3216YDC4，KSA992FTA，L-59SRSGC-CC-14.6HB-TNR01，LBT676-K2E7510，LDC21897M19D-078，LGA67K-H2-2-0-R33，LGK380NRE7504
KM68U4000CLTGI-10L，KPT3216YDC4，KSA992FTA，L-59SRSGC-CC-14.6HB-TNR01，LB T676-K2 E7510，LDC21897M19D-078，LGA67K-H2-2-0-R33，LGK380NRE7504
2019-12-8KMRX1000BM-B614三星SAMSUNG存储器价格PDF资料中文资料
KMRX1000BM-B614 原装现货 低价出售
2019-2-19
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
