位置：首页 > IC中文资料第54页 > KM416V1004C
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
KM416V1004C | 1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -5 o | Samsung 三星 |   | |
1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -5 o | Samsung 三星 | | ||
1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -5 o | Samsung 三星 | | ||
1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -5 o | Samsung 三星 | | ||
1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -5 o | Samsung 三星 | | ||
1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -5 o | Samsung 三星 | | ||
1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -5 o | Samsung 三星 | | ||
1M x 16 BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT 文件：1.75767 Mbytes Page：35 Pages | Samsung 三星 | |
KM416V1004C产品属性
- 类型
描述
- 型号
KM416V1004C
- 制造商
Samsung SDI
- 功能描述
DRAM Chip EDO 16M-Bit 1Mx16 3.3V 44-Pin TSOP-II
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SEC |
23+ |
TSSOP |
60 |
全新原装正品现货,支持订货 |
|||
SEC |
TSOP44 |
11054 |
全新原装进口自己库存优势 |
||||
SAMSUNG/三星 |
25+ |
TSOP |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
SEC |
25+ |
TSSOP |
30000 |
代理全新原装现货,价格优势 |
|||
SAMSUNG |
25+ |
TSOP |
2987 |
只售原装自家现货!诚信经营!欢迎来电! |
|||
SEC |
24+ |
SOP-44 |
9600 |
原装现货,优势供应,支持实单! |
|||
SEC |
23+ |
TSOP44 |
20000 |
全新原装假一赔十 |
|||
SEC |
24+ |
TSSOP |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
SAMSUNG |
23+ |
TSOP |
8560 |
受权代理!全新原装现货特价热卖! |
|||
SAM |
23+ |
TSOP |
5000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
KM416V1004C规格书下载地址
KM416V1004C参数引脚图相关
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DdatasheetPDF页码索引
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