位置：首页 > IC中文资料第5447页 > KM416C1204C
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
KM416C1204C | 1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -5 o | SAMSUNG 三星 |   | |
1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -5 o | SAMSUNG 三星 | | ||
1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -5 o | SAMSUNG 三星 | | ||
1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -5 o | SAMSUNG 三星 | | ||
1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -5 o | SAMSUNG 三星 | | ||
1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -5 o | SAMSUNG 三星 | | ||
1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -5 o | SAMSUNG 三星 | |
KM416C1204C产品属性
- 类型
描述
- 型号
KM416C1204C
- 制造商
SAMSUNG
- 制造商全称
Samsung semiconductor
- 功能描述
1M x 16Bit CMOS Dynamic RAM with Extended Data Out
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAMSUNG |
24+ |
TSOP |
400 |
||||
SEC/上优 |
2450+ |
SOJ |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
SAMSUNG |
24+ |
TSOP44 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
SAMSUNG/三星 |
22+ |
TSOP44 |
12245 |
现货,原厂原装假一罚十! |
|||
SAMSUNG/三星 |
24+ |
TSOP44 |
9600 |
原装现货,优势供应,支持实单! |
|||
SEC |
22+ |
TSOP44 |
8000 |
原装正品支持实单 |
|||
SEC |
25+ |
SOJ |
4500 |
全新原装、诚信经营、公司现货销售 |
|||
SAMSUNG |
25+ |
TSOP |
2700 |
全新原装自家现货优势! |
|||
sam |
25+ |
500000 |
行业低价,代理渠道 |
||||
SAMSUNG |
2023+ |
TSOP |
50000 |
原装现货 |
KM416C1204C规格书下载地址
KM416C1204C参数引脚图相关
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DdatasheetPDF页码索引
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