位置：首页 > IC中文资料第5447页 > KM416C1204C
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
KM416C1204C | 1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -5 o | Samsung 三星 |   | |
1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -5 o | Samsung 三星 | | ||
1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -5 o | Samsung 三星 | | ||
1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -5 o | Samsung 三星 | | ||
1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -5 o | Samsung 三星 | | ||
1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -5 o | Samsung 三星 | | ||
1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -5 o | Samsung 三星 | |
KM416C1204C产品属性
- 类型
描述
- 型号
KM416C1204C
- 制造商
SAMSUNG
- 制造商全称
Samsung semiconductor
- 功能描述
1M x 16Bit CMOS Dynamic RAM with Extended Data Out
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAMSUNG/三星 |
24+ |
NA/ |
118 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
SEC |
2016+ |
SOJ44 |
9000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
SAMSUNG |
23+ |
TSOP |
20000 |
全新原装假一赔十 |
|||
SAMSUNG |
24+ |
TSOP44 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
SAMSUNG |
99/ |
SOJ |
3 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
SAMSUNG/三星 |
24+ |
SOJ |
8540 |
只做原装正品现货或订货假一赔十! |
|||
SEC |
TSOP44 |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
SEC |
17+ |
TSOP44 |
9988 |
只做原装进口,自己库存 |
|||
Samsung |
25+ |
2 |
公司优势库存 热卖中!! |
||||
SAMSUNG/三星 |
23+ |
TSOP |
5000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
KM416C1204C芯片相关品牌
KM416C1204C规格书下载地址
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DdatasheetPDF页码索引
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