MOSFET

MOSFET - Power, Single N-Channel, STD Gate, SO8FL 40 V, 4.7 m, 66 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Small Footprint (5x6 mm) for Compact Design • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Motor Drive • Batt

MOSFET – Power, Single N-Channel 40 V, 4.9 m, 77 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVTFWS004N04C − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

MOSFET – Power, Single N-Channel 40 V, 4.9 m, 77 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVTFWS004N04C − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

MOSFET ??Power, Single, N-Channel 40 V, 4.9 m, 77 A

文件：212.91 Kbytes Page：7 Pages

MOSFET ??Power, Single, N-Channel 40 V, 4.9 m, 77 A

文件：212.91 Kbytes Page：7 Pages