N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for LED Lighting and switching mode power supplies. FEATURES • VDSS(Min.)= 200V, ID= 3.6A • D

N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for LED Lighting and switching mode power supplies. FEATURES • VDSS(Min.)= 200V, ID= 3.6A • D

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 200V RDSON (MAX.) 140mΩ ID 15A UIS, 100 Tested Pb‐Free Lead Plating & Halogen Free

200V N-Channel MOSFET

Features • 3.6A, 200V, RDS(on) = 1.4Ω @VGS = 10 V • Low gate charge ( typical 5.0 nC) • Low Crss ( typical 5.0 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

200V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. Features • 3.8A, 200V, RDS(on) = 1.35Ω @VGS = 10 V • Low gate charge ( typical 4.0 nC) • Low Crss ( typical 6.0 pF) • Fast swit

N-Channel QFET MOSFET 200 V, 3.0 A, 1.4

Features • 3.0 A, 200 V, RDS(on) = 1.4 Ω (Max.) @ VGS = 10 V • Low gate charge (Typ. 5.0 nC) • Low Crss (Typ. 5.0 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

200V N-Channel MOSFET

Features • 3.0 A, 200 V, RDS(on) = 1.4 Ω (Max.) @ VGS = 10 V • Low gate charge (Typ. 5.0 nC) • Low Crss (Typ. 5.0 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability