型号 功能描述 生产厂家 企业 LOGO 操作
KF1N60I

N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode power supplies. FEATURES • VDSS= 600V, ID= 1A • RDS(ON)=10Ω (Max) @VGS = 1

KEC

KEC(Korea Electronics)

KF1N60I

DPAK(1) PACKAGE

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode power supplies. FEATURES • VDSS= 600V, ID= 1A • RDS(ON)=10Ω (Max) @VGS = 1

KEC

KEC(Korea Electronics)

KF1N60I

N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode power supplies. FEATURES • VDSS= 600V, ID= 1A • RDS(ON)=10Ω (Max) @VGS = 1

KEC

KEC(Korea Electronics)

KF1N60I

Planar MOSFETs, IPAK(1), 600V, 1A

KEC

KEC(Korea Electronics)

GOLD BONDED GERMANIUM DIODE

Germanium Glass Diode Features • Germanium Glass Diode • RoHS Compliance

ETCList of Unclassifed Manufacturers

未分类制造商

Silicon Avalanche Diodes - 1500 Watt Metal Axial Leaded Transient Voltage Suppressors

FEATURES • Hermetically sealed • Breakdown voltage range 6.8 - 200 volts • Glass passivated junction • Excellent clamping capability • Low zener impedance • 100 surge tested • -55°C to +150°C • Bi-directional MAXIMUM RATING • Peak Pulse Power (Ppk): 15000 Watts (10 x 1000µs)@25°C (see di

Littelfuse

力特

Schottky Barrier Diode

Features 1. High reliability 2. Low reverse current and low forward voltage Applications Low current rectification and high speed switching Construction Silicon epitaxial planar

FORMOSA

美丽微半导体

JEDEC DO-7 PACKAGE

JEDEC DO-7 PACKAGE

ETCList of Unclassifed Manufacturers

未分类制造商

1.2 Amps, 600 Volts N-CHANNEL MOSFET

DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in pow

UTC

友顺

KF1N60I产品属性

  • 类型

    描述

  • 型号

    KF1N60I

  • 制造商

    KEC

  • 制造商全称

    KEC(Korea Electronics)

  • 功能描述

    DPAK(1) PACKAGE

更新时间:2025-11-20 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
KEC
24+
NA/
3301
原装现货,当天可交货,原型号开票
KEC
22+
TO-251
100000
代理渠道/只做原装/可含税
KEC
23+
TO-92L
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
ROHM/罗姆
2450+
SMD
8850
只做原装正品假一赔十为客户做到零风险!!
KF
SOT23-3
43000
一级代理 原装正品假一罚十价格优势长期供货
KFX
36118
SOT23-3
2015
专业代理电压检测IC,型号齐全,优势产品.
ROHM
6000
面议
19
DIP/SMD
KFX
24+
SOT23-3
333652
电压检测IC原装现货有优势
LTL
24+
104
KEC
25+
TO-251
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证

KF1N60I数据表相关新闻