N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode power supplies. FEATURES • VDSS(Min.)= 600V, ID= 13A • Drain-Source ON Res

N-Channel Power MOSFET

DESCRIPTION They are designed for use in applications such as switched mode power supplies. DC to DC converters, PWM motor controls, bridge circuits and general purpose switching applications. The Nell 13N60 is a three-terminal silicon device with current conduction capability of 13A, fast switch

N-Channel MOSFET 600V, 13A, 0.258廓

Description The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world

N-Channel MOSFET 600V, 13A, 0.258廓

Description The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world

N-Channel 650V (D-S) Power MOSFET

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isc N-Channel MOSFET Transistor

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