InfraredEmittingDiodes(GaAs)

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MICROWAVECWBIPOLAR

[ACRIANINC] GENERALDESCRIPTION The3001isacommonbasetransistorcapableofproviding1WattsofCWRFoutputpowerat3000MHz.Thishermeticallysealedtransistorisspecificallydesignedtelemetryandtelecommunicationsapplications.Itusesgoldmetalizationanddiffusedballastingtop

KKMaxi-3.96mm&5.08mmModularInterconnectionSystem

KEYFEATURES ■Availableon3.96mmand5.08mmcenterspacings ■Polarisationviainsertablekeysandpegs ■Allowsconnectionsanywhereontheboard ■Doublecantileverstyleterminal ■Selectivegoldplatingoptions ■End-to-endstackingcapabilities ■Lockingrampforimprovedmatedret

1Watt-28Volts,ClassCMicrowave3000MHz

GENERALDESCRIPTION The3001isaCOMMONBASEtransistorcapableofproviding1WattsClassC,RFoutputpowerat3000MHz.Goldmetalizationanddiffusedballastingareusedtoprovidehighreliabilityandsupremeruggedness.ThetransistorusesafullyhermeticHighTemperatureSolderSealedpa

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

KNOB

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