SILICON EPITAXIAL PIN TYPE DIODE

For antenna switches in mobile applications. FEATURES • Low Capacitance : CT=0.35[pF] (Max.) • Low Series resistance : rS=1.5[Ω] (Max.). • Small Package : ESC.

PIN Diode, ESC, 30V, 100mA

• Low Capacitance : CT=0.35[pF] (Max.) \n• Low Series Resistance : rs=1.5[ohm] (Max.)\n• Small Package : ESC.;

SILICON EPITAXIAL PIN TYPE DIODE

For antenna switches in mobile applications. FEATURES • Low Capacitance : CT=0.35[pF] (Max.) • Low Series resistance : rS=1.3[Ω] (Max.) • Small Package .

SILICON EPITAXIAL PIN TYPE DIODE

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SILICON EPITAXIAL PIN TYPE DIODE

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SILICON EPITAXIAL PIN TYPE DIODE

SILICON EPITAXIAL PIN TYPE DIODE

文件：438.36 Kbytes Page：2 Pages

ZenBlockTM; zener with integrated blocking diode

DESCRIPTION Cavity free cylindrical glass package through ImplotecTM(1) technology. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. FEATURES • Zener and blocking function in one package • Glass passivated • Low leakage current

POWER TRANSISTORS(10A,60-100V,125W)

10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

TIP140,TIP141,TIP142 -->NPN TIP145,TIP146,TIP147 ---> PNP . . . designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain — Min hFE = 1000 @ IC = 5 A, VCE = 4 V • Collector–Emitter Sustaining Voltage — @ 30 mA VCEO(sus) = 60 Vdc (Min) — TIP140,

POWER TRANSISTORS(10A,60-100V,80W)

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for general-purpose amplifier and low speed switching applications. 10 AMPERE DARLINGTIOON COM:EMEMTARY SILICON POWER TRANSISTORS 60 - 100 VOLTS 80 WATTS TIP140T,TIP141T,TIP142T -->NPN TIP145T,TIP146T,TIP147T ---> PNP

Silicon epitaxial planar type

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