SILICON EPITAXIAL PLANAR DIODE (ULTRA HIGH SPEED SWITCHING)

ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES • Small Package : SOT-23. • Low Forward Voltag : VF=0.9V(Typ.). • Fast Reverse Recovery Time : trr=1.6ns(Typ.). • Small Total Capacitance : CT=0.9pF(Typ.).

Small Signal Switching Diode, SOT-23, 80V, 300mA

• Low Forward Voltage : VF=0.9V (typ.)\n• Fast Reverse Recovery Time : trr=1.6nS(typ.)\n• Small Total Capacitance : CT=0.9pF (typ.)\n• Small Package : SOT-23.;

SILICON EPITAXIAL PLANAR DIODE

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开关二极管

整流二极管

Array LED 2 mm LED, Diffused

Features ● colored, diffused package ● for use as optical indicator ● available as multiple array (LED) ● load dump resistant acc. to DIN 40839

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices makes them ideal for large–signal, common source amplifier applications in 28 volt base station equipment. • Guaranteed Performance @ 945 MHz, 28 Volts

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices makes them ideal for large–signal, common source amplifier applications in 28 volt base station equipment. • Guaranteed Performance @ 945 MHz, 28 Volts

Silicon Complementary Transistors Audio Power Amp, Switch

Description: The NTE184 (NPN) and NTE185 (PNP) are silicon complementary transistors in a TO126 plastic package designed for use in power amplifier and switching circuits. Features: • Excellent Safe Area Limits

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE