SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)

Low Voltage High Speed Switching. FEATURES • Low Forward Voltage : VF =0.60V(Max.) • Low Reverse Current : IR=5μA(Max.)

SCHOTTKY BARRIER TYPE DIODE

文件：33.6 Kbytes Page：2 Pages

Schottky Barrier Diode

SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)

Low Voltage High Speed Switching. FEATURES • Low Forward Voltage : VF =0.60V(Max.) • Low Reverse Current : IR=5μA(Max.)

SCHOTTKY BARRIER TYPE DIODE

文件：33.6 Kbytes Page：2 Pages

SOT-23 PACKAGE

文件：16.36 Kbytes Page：1 Pages

Schottky Barrier Diode

SOT-23 PACKAGE

文件：16.36 Kbytes Page：1 Pages

High Voltage Transistors(NPN)

High Voltage Transistors NPN Silicon

SINGLE SUPPLY, LOW POWER DUAL COMPARATORS

SINGLE SUPPLY, LOW POWER DUAL COMPARATORS The LM393 series are dual independent precision voltage comparators capable of single or split supply operation. These devices are designed to permit a common mode range–to–ground level with single supply operation. Input offset voltage specifications

SINGLE SUPPLY, LOW POWER DUAL COMPARATORS

SINGLE SUPPLY, LOW POWER DUAL COMPARATORS The LM393 series are dual independent precision voltage comparators capable of single or split supply operation. These devices are designed to permit a common mode range–to–ground level with single supply operation. Input offset voltage specifications

SINGLE SUPPLY, LOW POWER DUAL COMPARATORS

SINGLE SUPPLY, LOW POWER DUAL COMPARATORS The LM393 series are dual independent precision voltage comparators capable of single or split supply operation. These devices are designed to permit a common mode range–to–ground level with single supply operation. Input offset voltage specifications

BROADBAND PUSH-PULL RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon Push-Pull RF Power Transistor . . . designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 500 MHz Characteristics — Output Power = 100 W Typical Gain = 9.5 dB (Class A