位置：首页 > IC中文资料第5239页 > KDB2
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SINGLE PHASE 2 . 0 AMP SURFACE MOUN T S C H O T T K Y BRIDGE RECTIFIER Features • High current capacity,low VF • Low Power Loss,High Efficiency • Ideally Suited for Automatic Assembly • For Use in Low Voltage Application • Plastic Case Material has UL Flammability Classification Rating 94V-0 | DYELEC 迪一电子 |   | ||
SINGLE PHASE 2 . 0 AMP SURFACE MOUN T S C H O T T K Y BRIDGE RECTIFIER Features • High current capacity,low VF • Low Power Loss,High Efficiency • Ideally Suited for Automatic Assembly • For Use in Low Voltage Application • Plastic Case Material has UL Flammability Classification Rating 94V-0 | DYELEC 迪一电子 | | ||
Ideally Suited for Automatic Assembly Features • High current capacity,low VF • Low Power Loss,High Efficiency • Ideally Suited for Automatic Assembly • For Use in Low Voltage Application • Plastic Case Material has UL Flammability Classification Rating 94V-0 | DYELEC 迪一电子 | | ||
Ideally Suited for Automatic Assembly Features • High current capacity,low VF • Low Power Loss,High Efficiency • Ideally Suited for Automatic Assembly • For Use in Low Voltage Application • Plastic Case Material has UL Flammability Classification Rating 94V-0 | DYELEC 迪一电子 | | ||
N-Channel PowerTrench MOSFET Features ● rDS(ON) = 14mΩ (Typ.), VGS = 10V, ID = 33A ● Qg(tot) = 82nC (Typ.), VGS = 10V ● Low Miller Charge ● Low QRR Body Diode ● UIS Capability (Single Pulse and Repetitive Pulse) | KEXIN 科信电子 | | ||
N-Channel PowerTrench MOSFET Features ● rDS(ON) = 32mΩ (Typ.), VGS = 10V, ID = 16A ● Qg(tot) = 39nC (Typ.), VGS = 10V ● Low Miller Charge ● Low QRR Body Diode ● UIS Capability (Single Pulse and Repetitive Pulse) | KEXIN 科信电子 | | ||
150V N-Channel PowerTrench MOSFET Features ● 22 A, 150 V. RDS(ON) = 80 mΩ @ VGS = 10 V RDS(ON) = 90 mΩ @ VGS = 6 V ● Low gate charge ● Fast switching speed ● High performance trench technology for extremely low RDS(ON) | KEXIN 科信电子 | | ||
N-Channel PowerTrench MOSFET Features ● rDS(ON) = 45mΩ (Typ.), VGS = 10V, ID = 9A ● Qg(tot) = 26nC (Typ.), VGS = 10V ● Low Miller Charge ● Low QRR Body Diode ● UIS Capability (Single Pulse and Repetitive Pulse) | KEXIN 科信电子 | | ||
200V N-Channel PowerTrench MOSFET Features ● 19 A, 200 V. RDS(ON) = 130 mΩ @ VGS = 10 V ● Low gate charge (27 nC typical) ● Fast switching speed ● High performance trench technology for extremely low RDS(ON) ● High power and current handling capability | KEXIN 科信电子 | | ||
THINKISEMIS SCHOTTKY TYPE SINGLE PHASE BRIDGE RECTIFIERS 文件：415.68 Kbytes Page：3 Pages | THINKISEMI 思祁半导体 | | ||
THINKISEMIS SCHOTTKY TYPE SINGLE PHASE BRIDGE RECTIFIERS 文件：415.68 Kbytes Page：3 Pages | THINKISEMI 思祁半导体 | | ||
肖特基桥式整流器 | DYELEC 迪一电子 | | ||
THINKISEMIS SCHOTTKY TYPE SINGLE PHASE BRIDGE RECTIFIERS 文件：415.68 Kbytes Page：3 Pages | THINKISEMI 思祁半导体 | | ||
肖特基桥式整流器 | DYELEC 迪一电子 | | ||
单相整流桥 | ETC 知名厂家 | ETC | | |
THINKISEMIS SCHOTTKY TYPE SINGLE PHASE BRIDGE RECTIFIERS 文件：415.68 Kbytes Page：3 Pages | THINKISEMI 思祁半导体 | | ||
THINKISEMIS SCHOTTKY TYPE SINGLE PHASE BRIDGE RECTIFIERS 文件：415.68 Kbytes Page：3 Pages | THINKISEMI 思祁半导体 | | ||
THINKISEMIS SCHOTTKY TYPE SINGLE PHASE BRIDGE RECTIFIERS 文件：415.68 Kbytes Page：3 Pages | THINKISEMI 思祁半导体 | |
KDB2产品属性
- 类型
描述
- 型号
KDB2
- 制造商
Eaton Corporation
- 功能描述
TYPE KDB BREAKER 2P 150A 600VAC MAX 25KAIC @ 600V
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
25+ |
234 |
公司优势库存 热卖中! |
|||||
KOREA |
24+ |
QFP |
270 |
||||
KYOCERA |
20+ |
QFP |
500 |
样品可出,优势库存欢迎实单 |
|||
KOREA |
22+ |
QFP-100 |
1000 |
全新原装现货!自家库存! |
|||
PERICOM |
25+ |
SOT363 |
15000 |
全新原装现货,价格优势 |
|||
OTAX |
25+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
|||
OTAX |
2447 |
NA |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
KODEC |
23+ |
SOP |
8000 |
只做原装现货 |
|||
ZV |
23+ |
DB-S |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
OTAX |
DIP-6 |
35560 |
一级代理 原装正品假一罚十价格优势长期供货 |
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KDB2数据表相关新闻
KD3005D
优势渠道
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2021-7-23KD2008-CG50A-紧凑型中速厚膜热敏打印头
KD2008- CG50A是合适的，需要热的设备，如高速的POS机和标签打印机应用 能够打印头印刷率较高。改进的电源电路设计手段较重的电流，它是可能的 打印速度高达125毫米/秒的高GK系列标签打印机，需要很高的印刷速度，从而为理想。 KD2008-CG50A的特点 1）使用一个特殊的紧凑型偏釉和新的加热元件结构，达到125毫米/秒的高速打印 2）使用新开发的高度耐用的导电保护膜，对改善对策静电。 3）电源电路的VH和GND部分得到了加强，使较重目前可以应用。 4）超小型连接器，设计符合FFCS，
2012-11-9
DdatasheetPDF页码索引
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