Single Phase 8.0 AMPS. Silicon Bridge Rectifiers

Voltage Range 50 to 1000 Volts Current 8.0 Amperes Features UL Recognized File # E-96005 High surge current capability Ideal for printed circuit board Reliable low cost construction technique results in inexpensive product High temperature soldering guaranteed: 260℃ / 10 sec

BRIDGE RECTIFIERS 2.0 to 8.0 Amps

[REF INTERNATIONAL] BRIDGE RECTIFIERS 2.0 to 8.0 Amps SINGLE PHASE PLASTIC BRIDGE RECTIFIERS (INCLUDING GLASS PASSIVATED)

8.0A SINGLE PHASE BRIDGE RECTIFIER

Features • Diffused Junction • Low Forward Voltage Drop • High Current Capability • High Reliability • High Surge Current Capability • Ideal for Printed Circuit Boards • UL Recognized File # E157705

SINGLE PHASE 8.0 AMP BRIDGE RECTIFIERS

FEATURES * Ideal for printed circuit board * Low forward voltage * Polarity: marked on body * Mounting position: Any * Low leakage current

8 Amp Single Phase Bridge Rectifier 50 to 1000 Volts

Features • Low Forward Voltage Drop • Ideal For Printer Circuit Boards • High Current Capability and High Reliability • High Surge Current Capability

Single Phase 8.0 AMPS. Bridge Rectifiers

文件：499 Kbytes Page：2 Pages

Single Phase 8.0 AMPS. Silicon Bridge Rectifiers

文件：169.76 Kbytes Page：2 Pages

Single Phase 8.0 AMPS. Bridge Rectifiers

文件：167.33 Kbytes Page：2 Pages

插件桥式整流器

Single Phase 8.0 AMPS. Glass Passivated Bridge Rectifiers

FEATURES - Glass passivated junction - Ideal for printed circuit board - High case dielectric strength - Typical IR less than 0.1μA - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free a

Single Phase 8.0 AMPS. Glass Passivated Bridge Rectifiers

文件：167.22 Kbytes Page：2 Pages

8A, 200V, Standard Bridge Rectifier

Single Phase 8.0 AMPS Glass Passivated Bridge Rectifiers

文件：171.69 Kbytes Page：2 Pages

Single Phase 8.0 AMPS. Glass Passivated Bridge Rectifiers

文件：522.09 Kbytes Page：2 Pages

Single Phase 8.0AMPS. Glass Passivated Bridge Rectifiers

文件：189.25 Kbytes Page：2 Pages

Glass Passivated Bridge Rectifiers

文件：192.23 Kbytes Page：4 Pages

封装/外壳：4-SIP，KBU 包装：管件 描述：BRIDGE RECT 1PHASE 200V 8A KBU 分立半导体产品 二极管 - 桥式整流器

封装/外壳：4-SIP，KBU 包装：管件 描述：BRIDGE RECT 1PHASE 200V 8A KBU 分立半导体产品 二极管 - 桥式整流器

2 W, 806 to 905 MHz UHF POWER AMPLIFIERS

The RF Line UHF Power Amplifiers Capable of wide power range control as encountered in portable cellular radio applications (30 dB typical). • MHW803–2 806–870 MHz • Specified 7.5 Volt Characteristics RF Input Power = 1 mW (0 dBm) RF Output Power = 2 Watts Minimum Gain (VControl

DARLINGTON POWER TRANSISTORS COMPLEMENTARY

These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built−in Base−Emitter Resistors to Limit Leakage − Multiplication • Choice of Packages − M

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

µPA803T has built-in 2 transistors which were developed for UHF. FEATURES • High fT fT = 5.5 GHz TYP. (@VCE = 5 V, IC = 5 mA, f = 1 GHz) • Small Collector Capacitance Cob = 0.7 pF TYP. (@VCB = 5 V, IE = 0, f = 1 MHz) • A Surface Mounting Package Adopted • Built-in 2 Transistors

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

µPA803T has built-in 2 transistors which were developed for UHF. FEATURES • High fT fT = 5.5 GHz TYP. (@VCE = 5 V, IC = 5 mA, f = 1 GHz) • Small Collector Capacitance Cob = 0.7 pF TYP. (@VCB = 5 V, IE = 0, f = 1 MHz) • A Surface Mounting Package Adopted • Built-in 2 Transistors