GLASS PASSIVATED BRIDGE RECTIFIERS

REVERSE VOLTAGE - 50 to 1000Volts FORWARD CURRENT - 10.0 Amperes FEATURES ● Surge overload rating -200 amperes peak ● Ideal for printed circuit board ● Reliable low cost construction utilizing molded plastic technique ● Plastic material has U/L flammability classification 94V-0

桥式整流器

KBU/IF:10A/ Vol:50V/ VF@IF:5A=>1.1V/ Tj:-55~150℃/

Glass Passivated Bridge Rectifiers

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GLASS PASSIVATED BRIDGE RECTIFIERS

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Glass Passivated Bridge Rectifiers

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NPN SILICON POWER DARLINGTON TRANSISTORS

SWITCHMODE™ Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode The MJ10005 Darlington transistor is designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line operated switchmode a

POWER TRANSISTORS(20A,350-400V,175W)

SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE 20 AMPERE POWER DARLINGTON TRANSISTORS 350-400 VOLTS 175 WATTS

20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS 175 WATTS

SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup DiodeThe MJ10005 Darlington transistor is designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line operated switchmode applicat

MICROWAVE POWER TRANSISTOR

The RF Line Microwave Power Transistor . . . designed for CW and long pulsed common base amplifier applications, such as JTIDS and Mode S, in the 0.96 to 1.215 GHz frequency range at high overall duty cycles. • Guaranteed Performance @ 1.215 GHz, 28 Vdc Output Power = 5.0 Watts CW

NPN SILICON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS)

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