Single Phase 2.0 AMPS. Glass Passivated Bridge Rectifiers

FEATURES - Ideal for printed circuit board - Reliable low cost construction utilizing molded plastic technique - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2

SINGLE PHASE SILICON BRIDGE RECTIFIER

FEATURES ● Ideal for printed circuit board ● Surge overload rating: 60A peak ● High case dielectric strength ● High temperature soldering guaranteed: 260°C/10 seconds at 5lbs. (2.3kg) tension

Single-phase Silicon Bridge Rectifier Reverse Voltage 50 to 1000 V Forward Current 2.0A

Features • Low reverse leakage • High forward surge capability • 60 A Surge overload rating: 60 Amperes peak • Lead and body according with RoHS standard

2.0A BRIDGE RECTIFIER

Features ● Diffused Junction ● Low Forward Voltage Drop ● High Current Capability ● High Reliability ● High Surge Current Capability ● Ideal for Printed Circuit Boards

BRIDGE RECTIFIERS

FEATURES ● UL Recognized File # E469616 ● Diffused Junction ● Low Forward Voltage Drop ● High Current Capability ● High Reliability ● High Surge Current Capability ● Ideal for Printed Circuit Boards

Single Phase 2.0AMP. Glass Passivatec Bridge Rectifiers

Features ◇ Glass passivated junction ◇ Ideal for printed circuit board ◇ Reliable low cost construction technique results in inexpensive product ◇ High temperature soldering guaranteed: 260°C / 10 seconds at 5 lbs. ( 2.3 Kg ) tension ◇ Small size, simple installation

Single Phase 2.0 AMPS. Glass Passivated Bridge Rectifiers?

Single Phase 2.0 AMPS Glass Passivated Bridge Rectifiers

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Single Phase 2.0 AMPS Glass Passivated Bridge Rectifiers

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Single-phase Silicon Bridge Rectifier

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Glass Passivated Bridge Rectifiers

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2A, 1000V, Standard Bridge Rectifier

封装/外壳：4-SIP，KBP 包装：管件 描述：BRIDGE RECT 1PHASE 1KV 2A KBP 分立半导体产品 二极管 - 桥式整流器

封装/外壳：4-SIP，KBP 包装：管件 描述：BRIDGE RECT 1PHASE 1KV 2A KBP 分立半导体产品 二极管 - 桥式整流器

SMALL OUTLINE OPTOISOLATORS TRANSISTOR OUTPUT

These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for through–the–board mounti

SCHOTTKY BARRIER RECTIFIERS(2.0A,70-100V)

SCHOTTKY BARRIER RECTIFIER 2.0A 70-100V

Operational Amplifiers

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Operational Amplifiers

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Darlington Phototransistor

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