Single Phase 1.5 AMPS. Glass Passivated Bridge Rectifiers

FEATURES - Ideal for printed circuit board - Reliable low cost construction utilizing molded plastic technique - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2

1.5A GLASS PASSIVATED BRIDGE RECTIFIER

Features ● Glass Passivated Die Construction ● Low Forward Voltage Drop ● High Current Capability ● High Reliability ● High Surge Current Capability ● Ideal for Printed Circuit Boards ● Recognized File # E157705

Single Phase 1.5AMP. Glass Passivatec Bridge Rectifiers

Features ◇ Glass passivated junction ◇ Ideal for printed circuit board ◇ Reliable low cost construction ◇ High surge current capability ◇ High temperature soldering guaranteed: 260 °C / 10 seconds at 5 lbs., ( 2.3 kg ) tension ◇ Small size, simple installation

1.5A GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER

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Glass Passivated Bridge Rectifiers

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Single Phase 1.5 AMPS. Glass Passivated Bridge Rectifiers

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Single Phase 1.5 AMPS. Glass Passivated Bridge Rectifiers

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封装/外壳：4-SIP，KBP 包装：管件 描述：BRIDGE RECT 1PHASE 400V 1.5A KBP 分立半导体产品 二极管 - 桥式整流器

封装/外壳：4-SIP，KBP 包装：管件 描述：BRIDGE RECT 1PHASE 400V 1.5A KBP 分立半导体产品 二极管 - 桥式整流器

DUAL-IN-LINE GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 1.0~1.5 Amperes)

VOLTAGE - 50 to 1000 Volts CURRENT - 1.0~1.5 Amperes FEATURES ● Plastic material used carries Underwriters Laboratory recognition 94V-O ● Low leakage ● Surge overload rating— 30~50 amperes peak ● Ideal for printed circuit board ● Exceeds environmental standards of MIL-S-19500/228

N-CHANNEL BROADBAND RF POWER MOSFET

Designed primarily for linear large–signal output stages in the 2.0–100 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics Output Power = 600 Watts Power Gain = 17 dB (Typ) Efficiency = 45 (Typ)

Silicon NPN Transistor High Voltage Video Output

Description: The NTE154 is a silicon NPN transistor in a TO39 type package designed for use as a video output to drive a color CRT. Features: • High Voltage: VCEO = 300V Min @ IC = 5mA • Low Capacitance: Cob = 3pF Max @ VCB = 20V • High Frequency: ft = 50MHz Min @ IC = 15mA • H

L-BAND SPDT SWITCH

DESCRIPTION The µPG154TB is an L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 6-pin super minimold package th

L-BAND SPDT SWITCH

DESCRIPTION The µPG154TB is an L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 6-pin super minimold package th