GENERAL PURPOSE HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE PHOTOCOUPLER SERIES

DESCRIPTION 1. The KB814(1-channel) is optically coupled isolators containing two GaAs light emitting diode and an NPN silicon phototransistor. 2. The lead pitch is 2.54mm. FEATURES 1.AC Input 2.High isolation voltage between input and output (Viso=5000 Vr.m.s) 3.Compact dual-in-line package

GENERAL PURPOSE HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE PHOTOCOUPLER SERIES

DESCRIPTION 1. The KB814(1-channel) is optically coupled isolators containing two GaAs light emitting diode and an NPN silicon phototransistor. 2. The lead pitch is 2.54mm. FEATURES 1.AC Input 2.High isolation voltage between input and output (Viso=5000 Vr.m.s) 3.Compact dual-in-line package

Silicon Epitaxial Planar Dual Capacitance Diode

Features • Silicon Epitaxial Planar Diode • Common cathode • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications     Tuning of separate resonant circuits, push-pull circuits in FM range, especially for car radios

Optocoupler with Phototransistor Output

DESCRIPTION The K814P/K824P/K844P consist of a phototransistor optically coupled to 2 gallium arsenide infrared emitting diodes (reverse polarity) in 4-pin (single); 8 pin (dual) or 16-pin (quad) plastic dual inline package. The elements are mounted on one leadframe providing a fixed distance b

Dual Channel Detector

Two seperate elements, size 1,5x1,5 Individual spectral window for each element Designed for Gas Analysis applications The LHi 814 pyroelectric infrared-detector series is specially designed for gas analysis and monitorring applications. It includes two pyroelectric elements, each ha

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5195 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

FEATURES • Low voltage operation, low phase distortion • Low noise: NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Flat-lead 6-pin thin-type ultra super minimold package. • Built-in 2 transistors (2 × 2SC5195)

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5195 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

FEATURES • Low voltage operation, low phase distortion • Low noise: NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Flat-lead 6-pin thin-type ultra super minimold package. • Built-in 2 transistors (2 × 2SC5195)