Schottky Barrier Diodes

■ Features ● Small surface mounting type ● Low Forward Voltage ● Low Reverse Current ● High Reliability

SUPER LOW NOISE InGaAs HEMT

DESCRIPTION The MGF491xG series super-low-noise HEMT(High Electron Mobility Transistor) is designed for use in L to Ku band amplifiers. The hermetically sealed metal-ceramic package assures minimumu parasitic losses, and has a configuration suitable for microstrip circuits. The MGF491*G series

MOSFET N-Ch, Enhancement Mode High Speed Switch

MOSFET N–Ch, Enhancement Mode High Speed Switch

NPN BISS transistor

DESCRIPTION NPN BISS (Breakthrough In Small Signal) transistor in a SOT23 plastic package. PNP complement: PMMT591A. FEATURES • High current (max. 1 A) • Low collector-emitter saturation voltage ensures reduced power consumption. APPLICATIONS • Battery powered units where high current and lo

NPN BISS transistor

DESCRIPTION NPN BISS (Breakthrough In Small Signal) transistor in a SOT23 plastic package. PNP complement: PMMT591A. FEATURES • High current (max. 1 A) • Low collector-emitter saturation voltage ensures reduced power consumption. APPLICATIONS • Battery powered units where high current and lo

LOW POWER HIGH SPEED RS-485/RS-422 TRANSCEIVER

DESCRIPTION The ST491A is a low power transceiver for RS-485 and RS-422 communications. The device contains one driver and one receiver in full duplex configuration. The ST491A draws 5mA (typ.) of supply current when unloaded and operates from a single 5V supply. ■ LOW SUPPLY CURRENT: 5mA MAX ■