MOS FIELD EFFECT POWER TRANSISTOR

FAST SWITCHING N-CHANNEL SILICON POWER MOS FET FEATURES • Suitable for switching power supplies, actuater controls, and pulse circuits • Low RDS(on) • No second breakdown

CMOS Low Voltage 4 ohm SPDT Switch

GENERAL DESCRIPTION The ADG719 is a monolithic CMOS SPDT switch. This switch is designed on a submicron process that provides low power dissipation yet gives high switching speed, low on resistance, and low leakage currents. The ADG719 can operate from a single-supply range of 1.8 V to 5.5 V, ma

CMOS Low Voltage 4 ohm SPDT Switch

GENERAL DESCRIPTION The ADG719 is a monolithic CMOS SPDT switch. This switch is designed on a submicron process that provides low power dissipation yet gives high switching speed, low on resistance, and low leakage currents. The ADG719 can operate from a single-supply range of 1.8 V to 5.5 V, ma

Very fast high-voltage soft-recovery rectifiers

DESCRIPTION Rugged glass package, using a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. The package is designed to be used in an insulating medium such as resin, oil or SF6 gas. FEATU

LOW VOLTAGE 4ohm SPDT SWITCH

DESCRIPTION The STG719 is an high speed SPDT CMOS SWITCH frabricated in silicon gate C2MOS technology. It is designed to operate from 1.8V to 5.5V, making this device ideal for portable applications. It offers 4Ω ON-Resistance Max at 5V 25°C. Additional key features are fast switching speed (tON=

LOW VOLTAGE 4ohm SPDT SWITCH

DESCRIPTION The STG719 is an high speed SPDT CMOS SWITCH frabricated in silicon gate C2MOS technology. It is designed to operate from 1.8V to 5.5V, making this device ideal for portable applications. It offers 4Ω ON-Resistance Max at 5V 25°C. Additional key features are fast switching speed (tON=