CMOS Low Voltage 4 ohm SPDT Switch

GENERAL DESCRIPTION The ADG719 is a monolithic CMOS SPDT switch. This switch is designed on a submicron process that provides low power dissipation yet gives high switching speed, low on resistance, and low leakage currents. The ADG719 can operate from a single-supply range of 1.8 V to 5.5 V, ma

CMOS 1.8 V至5.5 V、2.5Ω 2:1多路复用/单刀双掷开关，采用SOT-23封装

ADG719是一款单芯片CMOS单刀双掷（SPDT）开关。采用亚微米工艺设计，具有低功耗、高开关速度、低导通电阻和低泄漏电流特性。\n\n 该开关可以采用1.8 V至5.5 V单电源供电，非常适合用在电池供电仪表中，以及配合ADI的新一代DAC和ADC使用。\n\n 接通时，ADG719的各开关在两个方向的导电性能相同。ADG719为先开后合式开关。\n\n 由于采用了先进的亚微米工艺，−3 dB带宽可以达到200 MHz以上。\n\n ADG719提供6引脚SOT-23和8引脚MSOP两种封装。\n\n ADG719-EP支持防务和航空航天应 • 单电源：1.8 V 至5.5 V \n\n• 导通电阻：4 Ω （最大值）\n\n• 导通电阻平坦度：0.75 Ω（典型值）\n\n• -3 dB带宽大于200 MHz\n\n• 轨到轨工作\n\n• 6引脚SOT-23 封装和8引脚 MSOP 封装\n\n• 快速开关时间 \n接通时间tON：12 ns\n断开时间tOFF：6 ns \n\n• 典型功耗：<0.01 µW\n\n• TTL/CMOS兼容型;

CMOS Low Voltage 4 ohm SPDT Switch

GENERAL DESCRIPTION The ADG719 is a monolithic CMOS SPDT switch. This switch is designed on a submicron process that provides low power dissipation yet gives high switching speed, low on resistance, and low leakage currents. The ADG719 can operate from a single-supply range of 1.8 V to 5.5 V, ma

CMOS Low Voltage 4 ohm SPDT Switch

GENERAL DESCRIPTION The ADG719 is a monolithic CMOS SPDT switch. This switch is designed on a submicron process that provides low power dissipation yet gives high switching speed, low on resistance, and low leakage currents. The ADG719 can operate from a single-supply range of 1.8 V to 5.5 V, ma

CMOS 1.8 V to 5.5 V, 2.5 廓 2:1 Mux/SPDT Switch in SOT-23

GENERAL DESCRIPTION The ADG719-EP is a monolithic CMOS SPDT switch. This switch is designed on a submicron process that provides low power dissipation yet gives high switching speed, low on resistance, and low leakage currents. The ADG719-EP can operate from a single-supply range of 1.8 V to 5.5

CMOS 1.8 V to 5.5 V, 2.5 廓 2:1 Mux/SPDT Switch in SOT-23

GENERAL DESCRIPTION The ADG719-EP is a monolithic CMOS SPDT switch. This switch is designed on a submicron process that provides low power dissipation yet gives high switching speed, low on resistance, and low leakage currents. The ADG719-EP can operate from a single-supply range of 1.8 V to 5.5

CMOS 1.8 V to 5.5 V, 2.5 廓 2:1 Mux/SPDT Switch in SOT-23

文件：232.85 Kbytes Page：16 Pages

CMOS 1.8 V to 5.5 V, 2.5 廓 2:1 Mux/SPDT Switch in SOT-23

文件：232.85 Kbytes Page：16 Pages

CMOS 1.8 V to 5.5 V, 2.5 廓 2:1 Mux/SPDT Switch in SOT-23

文件：232.85 Kbytes Page：16 Pages

CMOS 1.8 V to 5.5 V, 2.5 廓 2:1 Mux/SPDT Switch in SOT-23

文件：232.85 Kbytes Page：16 Pages

CMOS 1.8 V to 5.5 V, 2.5 廓 2:1 Mux/SPDT Switch in SOT-23

文件：232.85 Kbytes Page：16 Pages

CMOS 1.8 V to 5.5 V, 2.5 廓 2:1 Mux/SPDT Switch in SOT-23

文件：232.85 Kbytes Page：16 Pages

CMOS 1.8 V to 5.5 V, 2.5 廓 2:1 Mux/SPDT Switch in SOT-23

文件：232.85 Kbytes Page：16 Pages

CMOS 1.8 V to 5.5 V, 2.5 廓 2:1 Mux/SPDT Switch in SOT-23

文件：232.85 Kbytes Page：16 Pages

CMOS 1.8 V to 5.5 V, 2.5 廓 2:1 Mux/SPDT Switch in SOT-23

文件：232.85 Kbytes Page：16 Pages

CMOS 1.8 V to 5.5 V, 2.5 廓 2:1 Mux/SPDT Switch in SOT-23

文件：232.85 Kbytes Page：16 Pages

CMOS 1.8 V to 5.5 V, 2.5 廓 2:1 Mux/SPDT Switch in SOT-23

文件：232.85 Kbytes Page：16 Pages

CMOS 1.8 V to 5.5 V, 2.5 廓 2:1 Mux/SPDT Switch in SOT-23

文件：232.85 Kbytes Page：16 Pages

CMOS 1.8 V to 5.5 V, 2.5 廓 2:1 Mux/SPDT Switch in SOT-23

文件：232.85 Kbytes Page：16 Pages

CMOS 1.8 V to 5.5 V, 2.5 廓 2:1 Mux/SPDT Switch in SOT-23

文件：232.85 Kbytes Page：16 Pages

Very fast high-voltage soft-recovery rectifiers

DESCRIPTION Rugged glass package, using a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. The package is designed to be used in an insulating medium such as resin, oil or SF6 gas. FEATU

LOW VOLTAGE 4ohm SPDT SWITCH

DESCRIPTION The STG719 is an high speed SPDT CMOS SWITCH frabricated in silicon gate C2MOS technology. It is designed to operate from 1.8V to 5.5V, making this device ideal for portable applications. It offers 4Ω ON-Resistance Max at 5V 25°C. Additional key features are fast switching speed (tON=

LOW VOLTAGE 4ohm SPDT SWITCH

DESCRIPTION The STG719 is an high speed SPDT CMOS SWITCH frabricated in silicon gate C2MOS technology. It is designed to operate from 1.8V to 5.5V, making this device ideal for portable applications. It offers 4Ω ON-Resistance Max at 5V 25°C. Additional key features are fast switching speed (tON=