型号 功能描述 生产厂家 企业 LOGO 操作
K6X4016T3F

256Kx16 bit Low Power and Low Voltage CMOS Static RAM

GENERAL DESCRIPTION The K6X4016T3F families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support various operating temperature range and have 44-TSOP2 package type for user flexibility of system design. The families also support low data retention voltage for battery

Samsung

三星

K6X4016T3F

256Kx16 bit Low Power and Low Voltage CMOS Static RAM

Samsung

三星

256Kx16 bit Low Power and Low Voltage CMOS Static RAM

GENERAL DESCRIPTION The K6X4016T3F families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support various operating temperature range and have 44-TSOP2 package type for user flexibility of system design. The families also support low data retention voltage for battery

Samsung

三星

256Kx16 bit Low Power and Low Voltage CMOS Static RAM

GENERAL DESCRIPTION The K6X4016T3F families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support various operating temperature range and have 44-TSOP2 package type for user flexibility of system design. The families also support low data retention voltage for battery

Samsung

三星

256Kx16 bit Low Power and Low Voltage CMOS Static RAM

GENERAL DESCRIPTION The K6X4016T3F families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support various operating temperature range and have 44-TSOP2 package type for user flexibility of system design. The families also support low data retention voltage for battery

Samsung

三星

256Kx16 bit Low Power and Low Voltage CMOS Static RAM

GENERAL DESCRIPTION The K6X4016T3F families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support various operating temperature range and have 44-TSOP2 package type for user flexibility of system design. The families also support low data retention voltage for battery

Samsung

三星

256Kx16 bit Low Power and Low Voltage CMOS Static RAM

GENERAL DESCRIPTION The K6X4016T3F families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support various operating temperature range and have 44-TSOP2 package type for user flexibility of system design. The families also support low data retention voltage for battery

Samsung

三星

256Kx16 bit Low Power and Low Voltage CMOS Static RAM

GENERAL DESCRIPTION The K6X4016T3F families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support various operating temperature range and have 44-TSOP2 package type for user flexibility of system design. The families also support low data retention voltage for battery

Samsung

三星

256Kx16 bit Low Power and Low Voltage CMOS Static RAM

GENERAL DESCRIPTION The K6X4016T3F families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support various operating temperature range and have 44-TSOP2 package type for user flexibility of system design. The families also support low data retention voltage for battery

Samsung

三星

256Kx16 bit Low Power and Low Voltage CMOS Static RAM

GENERAL DESCRIPTION The K6X4016T3F families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support various operating temperature range and have 44-TSOP2 package type for user flexibility of system design. The families also support low data retention voltage for battery

Samsung

三星

256Kx16 bit Low Power and Low Voltage CMOS Static RAM

GENERAL DESCRIPTION The K6X4016T3F families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support various operating temperature range and have 44-TSOP2 package type for user flexibility of system design. The families also support low data retention voltage for battery

Samsung

三星

256Kx16 bit Low Power and Low Voltage CMOS Static RAM

GENERAL DESCRIPTION The K6X4016T3F families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support various operating temperature range and have 44-TSOP2 package type for user flexibility of system design. The families also support low data retention voltage for battery

Samsung

三星

256Kx16 bit Low Power and Low Voltage CMOS Static RAM

GENERAL DESCRIPTION The K6X4016T3F families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support various operating temperature range and have 44-TSOP2 package type for user flexibility of system design. The families also support low data retention voltage for battery

Samsung

三星

K6X4016T3F产品属性

  • 类型

    描述

  • 型号

    K6X4016T3F

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    256Kx16 bit Low Power and Low Voltage CMOS Static RAM

更新时间:2025-10-4 16:18:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SAM
25+
标准封装
18000
原厂直接发货进口原装
SAMSUNG/三星
2402+
TSOP
8324
原装正品!实单价优!
SAMSUNG
17+
TSOP-44
6200
100%原装正品现货
SAMSUNG/三星
23+
TSOP
98900
原厂原装正品现货!!
SAMSUNG/三星
原厂封装
9800
原装进口公司现货假一赔百
SAMSUNG
23+
TSOP
5000
原装正品,假一罚十
24+
SOP
7003
SAMSUNG/三星
24+
NA
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
SAMSUNG
18+
TSOP44
85600
保证进口原装可开17%增值税发票
SAMSUNG
22+
TSOP
8000
原装正品支持实单

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