型号 功能描述 生产厂家 企业 LOGO 操作
K6X4016T3F

256Kx16 bit Low Power and Low Voltage CMOS Static RAM

GENERAL DESCRIPTION The K6X4016T3F families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support various operating temperature range and have 44-TSOP2 package type for user flexibility of system design. The families also support low data retention voltage for battery

Samsung

三星

K6X4016T3F

256Kx16 bit Low Power and Low Voltage CMOS Static RAM

Samsung

三星

256Kx16 bit Low Power and Low Voltage CMOS Static RAM

GENERAL DESCRIPTION The K6X4016T3F families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support various operating temperature range and have 44-TSOP2 package type for user flexibility of system design. The families also support low data retention voltage for battery

Samsung

三星

256Kx16 bit Low Power and Low Voltage CMOS Static RAM

GENERAL DESCRIPTION The K6X4016T3F families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support various operating temperature range and have 44-TSOP2 package type for user flexibility of system design. The families also support low data retention voltage for battery

Samsung

三星

256Kx16 bit Low Power and Low Voltage CMOS Static RAM

GENERAL DESCRIPTION The K6X4016T3F families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support various operating temperature range and have 44-TSOP2 package type for user flexibility of system design. The families also support low data retention voltage for battery

Samsung

三星

256Kx16 bit Low Power and Low Voltage CMOS Static RAM

GENERAL DESCRIPTION The K6X4016T3F families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support various operating temperature range and have 44-TSOP2 package type for user flexibility of system design. The families also support low data retention voltage for battery

Samsung

三星

256Kx16 bit Low Power and Low Voltage CMOS Static RAM

GENERAL DESCRIPTION The K6X4016T3F families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support various operating temperature range and have 44-TSOP2 package type for user flexibility of system design. The families also support low data retention voltage for battery

Samsung

三星

256Kx16 bit Low Power and Low Voltage CMOS Static RAM

GENERAL DESCRIPTION The K6X4016T3F families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support various operating temperature range and have 44-TSOP2 package type for user flexibility of system design. The families also support low data retention voltage for battery

Samsung

三星

256Kx16 bit Low Power and Low Voltage CMOS Static RAM

GENERAL DESCRIPTION The K6X4016T3F families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support various operating temperature range and have 44-TSOP2 package type for user flexibility of system design. The families also support low data retention voltage for battery

Samsung

三星

256Kx16 bit Low Power and Low Voltage CMOS Static RAM

GENERAL DESCRIPTION The K6X4016T3F families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support various operating temperature range and have 44-TSOP2 package type for user flexibility of system design. The families also support low data retention voltage for battery

Samsung

三星

256Kx16 bit Low Power and Low Voltage CMOS Static RAM

GENERAL DESCRIPTION The K6X4016T3F families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support various operating temperature range and have 44-TSOP2 package type for user flexibility of system design. The families also support low data retention voltage for battery

Samsung

三星

256Kx16 bit Low Power and Low Voltage CMOS Static RAM

GENERAL DESCRIPTION The K6X4016T3F families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support various operating temperature range and have 44-TSOP2 package type for user flexibility of system design. The families also support low data retention voltage for battery

Samsung

三星

256Kx16 bit Low Power and Low Voltage CMOS Static RAM

GENERAL DESCRIPTION The K6X4016T3F families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support various operating temperature range and have 44-TSOP2 package type for user flexibility of system design. The families also support low data retention voltage for battery

Samsung

三星

K6X4016T3F产品属性

  • 类型

    描述

  • 型号

    K6X4016T3F

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    256Kx16 bit Low Power and Low Voltage CMOS Static RAM

更新时间:2025-11-20 18:32:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SAMSUNG
24+
TSOP44
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
SAMSUNG
2430+
TSOP44
8540
只做原装正品假一赔十为客户做到零风险!!
SAMSUNG
25+
TSOP
2568
原装优势!绝对公司现货
SAMSUNG/三星
23+
TSOP
98900
原厂原装正品现货!!
SAM
SOP
4840
正品原装--自家现货-实单可谈
SAMSUNG/三星
原厂封装
9800
原装进口公司现货假一赔百
SAMSUNG(三星)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
专业SAM
23+
TSOP-44
5000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
SAM
23+
NA
285
专做原装正品,假一罚百!
SAMSUNG/三星
24+
TSOP
9500
全新原装现货特价销售,欢迎来电查询

K6X4016T3F芯片相关品牌

K6X4016T3F数据表相关新闻