位置：首页 > IC中文资料第5581页 > K6R4016C1D
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
K6R4016C1D | 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l | Samsung 三星 |   | |
K6R4016C1D | 1Mx4 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges 文件：218.74 Kbytes Page：9 Pages | Samsung 三星 | | |
1Mx4 Bit High Speed Static RAM(5.0V Operating) GENERAL DESCRIPTION The K6R4004C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica | Samsung 三星 | | ||
1Mx4 Bit High Speed Static RAM(5.0V Operating) GENERAL DESCRIPTION The K6R4004C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica | Samsung 三星 | | ||
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l | Samsung 三星 | | ||
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l | Samsung 三星 | | ||
1Mx4 Bit High Speed Static RAM(5.0V Operating) GENERAL DESCRIPTION The K6R4004C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica | Samsung 三星 | | ||
1Mx4 Bit High Speed Static RAM(5.0V Operating) GENERAL DESCRIPTION The K6R4004C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica | Samsung 三星 | | ||
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l | Samsung 三星 | | ||
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l | Samsung 三星 | | ||
1Mx4 Bit High Speed Static RAM(5.0V Operating) GENERAL DESCRIPTION The K6R4004C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica | Samsung 三星 | | ||
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l | Samsung 三星 | | ||
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l | Samsung 三星 | | ||
1Mx4 Bit High Speed Static RAM(5.0V Operating) GENERAL DESCRIPTION The K6R4004C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica | Samsung 三星 | | ||
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l | Samsung 三星 | | ||
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l | Samsung 三星 | | ||
1Mx4 Bit High Speed Static RAM(5.0V Operating) GENERAL DESCRIPTION The K6R4004C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica | Samsung 三星 | | ||
1Mx4 Bit High Speed Static RAM(5.0V Operating) GENERAL DESCRIPTION The K6R4004C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica | Samsung 三星 | | ||
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l | Samsung 三星 | | ||
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l | Samsung 三星 | | ||
1Mx4 Bit High Speed Static RAM(5.0V Operating) GENERAL DESCRIPTION The K6R4004C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica | Samsung 三星 | | ||
1Mx4 Bit High Speed Static RAM(5.0V Operating) GENERAL DESCRIPTION The K6R4004C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica | Samsung 三星 | | ||
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l | Samsung 三星 | | ||
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l | Samsung 三星 | | ||
1Mx4 Bit High Speed Static RAM(5.0V Operating) GENERAL DESCRIPTION The K6R4004C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica | Samsung 三星 | | ||
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l | Samsung 三星 | | ||
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l | Samsung 三星 | | ||
1Mx4 Bit High Speed Static RAM(5.0V Operating) GENERAL DESCRIPTION The K6R4004C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica | Samsung 三星 | | ||
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l | Samsung 三星 | | ||
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l | Samsung 三星 | | ||
1Mx4 Bit High Speed Static RAM(5.0V Operating) GENERAL DESCRIPTION The K6R4004C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica | Samsung 三星 | | ||
1Mx4 Bit High Speed Static RAM(5.0V Operating) GENERAL DESCRIPTION The K6R4004C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica | Samsung 三星 | | ||
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l | Samsung 三星 | | ||
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l | Samsung 三星 | | ||
1Mx4 Bit High Speed Static RAM(5.0V Operating) GENERAL DESCRIPTION The K6R4004C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica | Samsung 三星 | | ||
1Mx4 Bit High Speed Static RAM(5.0V Operating) GENERAL DESCRIPTION The K6R4004C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica | Samsung 三星 | | ||
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l | Samsung 三星 | | ||
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l | Samsung 三星 | | ||
1Mx4 Bit High Speed Static RAM(5.0V Operating) GENERAL DESCRIPTION The K6R4004C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica | Samsung 三星 | | ||
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l | Samsung 三星 | | ||
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l | Samsung 三星 | | ||
1Mx4 Bit High Speed Static RAM(5.0V Operating) GENERAL DESCRIPTION The K6R4004C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica | Samsung 三星 | | ||
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l | Samsung 三星 | | ||
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l | Samsung 三星 | | ||
1Mx4 Bit High Speed Static RAM(5.0V Operating) GENERAL DESCRIPTION The K6R4004C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica | Samsung 三星 | | ||
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l | Samsung 三星 | | ||
1Mx4 Bit High Speed Static RAM(5.0V Operating) GENERAL DESCRIPTION The K6R4004C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica | Samsung 三星 | | ||
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l | Samsung 三星 | | ||
1Mx4 Bit High Speed Static RAM(5.0V Operating) GENERAL DESCRIPTION The K6R4004C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica | Samsung 三星 | | ||
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l | Samsung 三星 | | ||
1Mx4 Bit High Speed Static RAM(5.0V Operating) GENERAL DESCRIPTION The K6R4004C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica | Samsung 三星 | | ||
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l | Samsung 三星 | | ||
1Mx4 Bit High Speed Static RAM(5.0V Operating) GENERAL DESCRIPTION The K6R4004C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica | Samsung 三星 | | ||
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l | Samsung 三星 | | ||
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l | Samsung 三星 | | ||
1Mx4 Bit High Speed Static RAM(5.0V Operating) GENERAL DESCRIPTION The K6R4004C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica | Samsung 三星 | | ||
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l | Samsung 三星 | | ||
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l | Samsung 三星 | | ||
1Mx4 Bit High Speed Static RAM(5.0V Operating) GENERAL DESCRIPTION The K6R4004C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica | Samsung 三星 | | ||
1Mx4 Bit High Speed Static RAM(5.0V Operating) GENERAL DESCRIPTION The K6R4004C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica | Samsung 三星 | |
K6R4016C1D产品属性
- 类型
描述
- 型号
K6R4016C1D
- 制造商
SAMSUNG
- 制造商全称
Samsung semiconductor
- 功能描述
1Mx4 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAMSUNG |
21+ |
TSOP |
12588 |
原装正品,自己库存 假一罚十 |
|||
SAMSUNG/三星 |
23+ |
TSOP44 |
5000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
|||
SAMSUNG |
15+ |
SSOP |
11560 |
全新原装,现货库存,长期供应 |
|||
SAMSUNG/三星 |
25+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
|||
SAMSUNG/三星 |
2447 |
TSOP |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
军工特供 |
NA |
688 |
军工一级专供 只做进口原装假一罚十价优! |
||||
SAMSUNG/三星 |
23+ |
TSOP44 |
50000 |
全新原装正品现货,支持订货 |
|||
23+ |
TSSOP44 |
20079 |
专注原装正品现货特价中量大可定 |
||||
SAMSUNG(三星) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
SAMSUNG/三星 |
1016+ |
TSOP44 |
15242 |
只做原厂原装,认准宝芯创配单专家 |
K6R4016C1D芯片相关品牌
K6R4016C1D规格书下载地址
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- K6R4016C1C-C
- K6R4008VID-JC10
- K6R4008VIC-TI10T00
- K6R4008V1D-UI10T00
- K6R4008V1D-UI10000
- K6R4008V1D-UI10
- K6R4008V1D-UI08
- K6R4008V1D-UC10
- K6A65D
- K-683
- K-682
- K-681
- K-680
- K6283K
- K6268K
- K6265K
- K6264K
- K60-500
- K60-375
- K60-300
- K60-250
- K60-200
- K60-185
- K60-160
- K60-135
- K60-090
- K60-075
- K60-065
K6R4016C1D数据表相关新闻
K7805-1000R3百分百原装，现货
K7805-1000R3百分百原装，现货
2024-9-18K521H12ACH-B050
K521H12ACH-B050 HYNIX 2020+ BGA K524G2GACJ-B050 SKHYNIX 2020+ BGA K521F57ACM-A060 HYNIX 2020+ BGA K524F2HACA-B050 SKHYNIX 2020+ BGA K521H12ACB-B060 HYNIX 2020+ BGA K524G2GACI-BO50 HYNIX 2020+ BGA K521F57ACC-B050000 HYNIX 2020+ BGA PM8018 HYNIX 2020 BGA PM8015 SKHYNIX 2020 BGA EMMC08G-W325 S
2021-5-26K6R4016C1D-UI10 静态存储器芯片 进口原装现货。
K6R4016C1D-UI10 进口原装现货。
2020-10-20K6R1008C1D-UC15，K6R1008C1D-UI15，K6R1008V1B-TC10，K6R1008V1B-TC12，
K6R1008C1D-UC15，K6R1008C1D-UI15，K6R1008V1B-TC10，K6R1008V1B-TC12，
2020-2-24K6R4004C1C-JE12，K6R4004C1C-JE15，K6R4004C1C-JI10，K6R4004V1C-JI10，K6R4004C1B-TC，K6R4004V1C-JC10，K6R4004V1C-JC15，K6R4004V1C-JE10，K6R4004C1D-JE15，K6R4004CIC-TC
K6R4004C1C-JE12，K6R4004C1C-JE15，K6R4004C1C-JI10，K6R4004V1C-JI10，K6R4004C1B-TC，K6R4004V1C-JC10，K6R4004V1C-JC15，K6R4004V1C-JE10，K6R4004C1D-JE15，K6R4004CIC-TC
2020-1-1K7805-500R3
K7805-500R3 ，全新原装当天发货或门市自取0755-82732291.
2019-11-15
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