型号 功能描述 生产厂家&企业 LOGO 操作
K6R4008V1D

512Kx8 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges.

文件:239.61 Kbytes Page:10 Pages

Samsung

三星

K6R4008V1D

1Mx4 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges

文件:218.74 Kbytes Page:9 Pages

Samsung

三星

K6R4008V1D

512Kx8 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges.

文件:245.22 Kbytes Page:10 Pages

Samsung

三星

256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.

GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l

Samsung

三星

256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.

GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l

Samsung

三星

256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.

GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l

Samsung

三星

256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.

GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l

Samsung

三星

256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.

GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l

Samsung

三星

256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.

GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l

Samsung

三星

256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.

GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l

Samsung

三星

256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.

GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l

Samsung

三星

256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.

GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l

Samsung

三星

256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.

GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l

Samsung

三星

256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.

GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l

Samsung

三星

256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.

GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l

Samsung

三星

256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.

GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l

Samsung

三星

256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.

GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l

Samsung

三星

256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.

GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l

Samsung

三星

256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.

GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l

Samsung

三星

512Kx8 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges.

文件:245.22 Kbytes Page:10 Pages

Samsung

三星

1Mx4 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges

文件:218.74 Kbytes Page:9 Pages

Samsung

三星

512Kx8 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges.

文件:245.22 Kbytes Page:10 Pages

Samsung

三星

CMOS SRAM

文件:214.12 Kbytes Page:10 Pages

Samsung

三星

512Kx8 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges.

文件:139.4 Kbytes Page:9 Pages

Samsung

三星

512Kx8 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges.

文件:139.4 Kbytes Page:9 Pages

Samsung

三星

512Kx8 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges.

文件:139.4 Kbytes Page:9 Pages

Samsung

三星

512Kx8 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges.

文件:139.4 Kbytes Page:9 Pages

Samsung

三星

K6R4008V1D产品属性

  • 类型

    描述

  • 型号

    K6R4008V1D

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    1Mx4 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges

更新时间:2025-8-8 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SAMSUNG/三星
22+
SOJ36
100000
代理渠道/只做原装/可含税
SAMSUNG/三星
24+
NA/
3282
原装现货,当天可交货,原型号开票
SAMSUNG/三星
25+
TSOP44
54658
百分百原装现货 实单必成
SAMSUNG/三星
25+
TSOP44
12496
SAMSUNG/三星原装正品K6R4008V1D-UI10即刻询购立享优惠#长期有货
SEC
24+
TSOP
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
SAMSUNG/三星
21+
SOJ36
7500
只做原装所有货源可以追溯原厂
SAMSUNG
20+
SOJPB
2860
原厂原装正品价格优惠公司现货欢迎查询
SAMSUNG
23+
TSOP44
12800
##公司主营品牌长期供应100%原装现货可含税提供技术
SAMSUNG/三星
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
SAM
25+
SOP
3200
全新原装、诚信经营、公司现货销售

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