位置:首页 > IC中文资料第5508页 > K6R4008V1D
型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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K6R4008V1D | 512Kx8 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges. 文件:239.61 Kbytes Page:10 Pages | Samsung 三星 | ||
K6R4008V1D | 1Mx4 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges 文件:218.74 Kbytes Page:9 Pages | Samsung 三星 | ||
K6R4008V1D | 512Kx8 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges. 文件:245.22 Kbytes Page:10 Pages | Samsung 三星 | ||
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l | Samsung 三星 | |||
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l | Samsung 三星 | |||
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l | Samsung 三星 | |||
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l | Samsung 三星 | |||
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l | Samsung 三星 | |||
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l | Samsung 三星 | |||
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l | Samsung 三星 | |||
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l | Samsung 三星 | |||
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l | Samsung 三星 | |||
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l | Samsung 三星 | |||
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l | Samsung 三星 | |||
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l | Samsung 三星 | |||
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l | Samsung 三星 | |||
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l | Samsung 三星 | |||
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l | Samsung 三星 | |||
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l | Samsung 三星 | |||
512Kx8 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges. 文件:245.22 Kbytes Page:10 Pages | Samsung 三星 | |||
1Mx4 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges 文件:218.74 Kbytes Page:9 Pages | Samsung 三星 | |||
512Kx8 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges. 文件:245.22 Kbytes Page:10 Pages | Samsung 三星 | |||
CMOS SRAM 文件:214.12 Kbytes Page:10 Pages | Samsung 三星 | |||
512Kx8 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges. 文件:139.4 Kbytes Page:9 Pages | Samsung 三星 | |||
512Kx8 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges. 文件:139.4 Kbytes Page:9 Pages | Samsung 三星 | |||
512Kx8 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges. 文件:139.4 Kbytes Page:9 Pages | Samsung 三星 | |||
512Kx8 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges. 文件:139.4 Kbytes Page:9 Pages | Samsung 三星 |
K6R4008V1D产品属性
- 类型
描述
- 型号
K6R4008V1D
- 制造商
SAMSUNG
- 制造商全称
Samsung semiconductor
- 功能描述
1Mx4 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
SAMSUNG/三星 |
22+ |
SOJ36 |
100000 |
代理渠道/只做原装/可含税 |
|||
SAMSUNG/三星 |
24+ |
NA/ |
3282 |
原装现货,当天可交货,原型号开票 |
|||
SAMSUNG/三星 |
25+ |
TSOP44 |
54658 |
百分百原装现货 实单必成 |
|||
SAMSUNG/三星 |
25+ |
TSOP44 |
12496 |
SAMSUNG/三星原装正品K6R4008V1D-UI10即刻询购立享优惠#长期有货 |
|||
SEC |
24+ |
TSOP |
20000 |
全新原厂原装,进口正品现货,正规渠道可含税!! |
|||
SAMSUNG/三星 |
21+ |
SOJ36 |
7500 |
只做原装所有货源可以追溯原厂 |
|||
SAMSUNG |
20+ |
SOJPB |
2860 |
原厂原装正品价格优惠公司现货欢迎查询 |
|||
SAMSUNG |
23+ |
TSOP44 |
12800 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
SAMSUNG/三星 |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
SAM |
25+ |
SOP |
3200 |
全新原装、诚信经营、公司现货销售 |
K6R4008V1D规格书下载地址
K6R4008V1D参数引脚图相关
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- l3g4200d
- l393
- l32
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- kt250
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- k9f1208
- K7252M
- K7075P
- K7055
- K7045D2
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- K7045C
- K70150P
- K70100P
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- K700107
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- K700103
- K700102
- K700101
- K70_V04
- K70_V03
- K70_V02
- K70_V01
- K6R4008V1D-UC08
- K6R4008V1D-TI10
- K6R4008V1D-TI08
- K6R4008V1D-TC10
- K6R4008V1D-TC08
- K6R4008V1D-KI10T00
- K6R4008V1D-KI10000
- K6R4008V1D-KI10
- K6R4008V1D-KI08
- K6R4008V1D-KC10
- K6R4008V1D-KC08
- K6R4008V1D-JI10000
- K6R4008V1D-JI10
- K6R4008V1D-JI08
- K6R4008V1D-JC10T00
- K6R4008V1D-JC10
- K6R4008V1D-JC08000
- K6R4008V1D-JC08
- K6R4008V1D-JC
- K6R4008V1D-J
- K6R4008V1C-TI15000
- K6R4008V1C-T110000
- K6R4008V1C-P
- K6R4008V1C-L
- K6R4008V1C-I15
- K6R4008V1C-I12
- K6R4008V1C-I10
- K6R4008V1C-I
- K6R4008V1C-C15
- K6R4008V1C-C12
- K6R4008V1C-C10
- K6R4008V1C-C
- K6R4008V1B-I15
- K6R4008V1B-I12
- K6R4008V1B-I10
- K6R4008V1B-C15
- K6R4008V1B-C12
- K6R4008V1B-C10
- K6R4008V1B
- K6R4008C1D-UI10000
- K6A65D
- K-683
- K-682
- K-681
- K-680
- K6283K
- K6268K
- K6265K
- K6264K
- K60-500
- K60-375
- K60-300
- K60-250
- K60-200
- K60-185
- K60-160
- K60-135
- K60-090
- K60-075
- K60-065
K6R4008V1D数据表相关新闻
K7805-1000R3百分百原装,现货
K7805-1000R3百分百原装,现货
2024-9-18K521H12ACH-B050
K521H12ACH-B050 HYNIX 2020+ BGA K524G2GACJ-B050 SKHYNIX 2020+ BGA K521F57ACM-A060 HYNIX 2020+ BGA K524F2HACA-B050 SKHYNIX 2020+ BGA K521H12ACB-B060 HYNIX 2020+ BGA K524G2GACI-BO50 HYNIX 2020+ BGA K521F57ACC-B050000 HYNIX 2020+ BGA PM8018 HYNIX 2020 BGA PM8015 SKHYNIX 2020 BGA EMMC08G-W325 S
2021-5-26K6R4016C1D-UI10 静态存储器芯片 进口原装现货。
K6R4016C1D-UI10 进口原装现货。
2020-10-20K6R1008C1D-UC15,K6R1008C1D-UI15,K6R1008V1B-TC10,K6R1008V1B-TC12,
K6R1008C1D-UC15,K6R1008C1D-UI15,K6R1008V1B-TC10,K6R1008V1B-TC12,
2020-2-24K6R4004C1C-JE12,K6R4004C1C-JE15,K6R4004C1C-JI10,K6R4004V1C-JI10,K6R4004C1B-TC,K6R4004V1C-JC10,K6R4004V1C-JC15,K6R4004V1C-JE10,K6R4004C1D-JE15,K6R4004CIC-TC
K6R4004C1C-JE12,K6R4004C1C-JE15,K6R4004C1C-JI10,K6R4004V1C-JI10,K6R4004C1B-TC,K6R4004V1C-JC10,K6R4004V1C-JC15,K6R4004V1C-JE10,K6R4004C1D-JE15,K6R4004CIC-TC
2020-1-1K7805-500R3
K7805-500R3 ,全新原装当天发货或门市自取0755-82732291.
2019-11-15
DdatasheetPDF页码索引
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