位置：首页 > IC中文资料第6200页 > K6R1016C1
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
K6R1016C1 | 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1016V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 65,536 words by 16 bits. The K6R1016V1D uses 16 common input and output lines and has at output enable pin which operates faster than address access time at read cycle. Also it allows that lo | Samsung 三星 |   | |
64Kx16 Bit High-Speed CMOS Static RAM(5.0V Operating). GENERAL DESCRIPTION The K6R1016C1C is a 1,048,576-bit high-speed Static Random Access Memory organized as 65,536 words by 16 bits. The K6R1016C1C uses 16 common input and output lines and has at output enable pin which operates faster than address access time at read cycle. FEATURES • Fast Acce | Samsung 三星 | | ||
64Kx16 Bit High-Speed CMOS Static RAM(5.0V Operating). GENERAL DESCRIPTION The K6R1016C1C is a 1,048,576-bit high-speed Static Random Access Memory organized as 65,536 words by 16 bits. The K6R1016C1C uses 16 common input and output lines and has at output enable pin which operates faster than address access time at read cycle. FEATURES • Fast Acce | Samsung 三星 | | ||
64Kx16 Bit High-Speed CMOS Static RAM(5.0V Operating). GENERAL DESCRIPTION The K6R1016C1C is a 1,048,576-bit high-speed Static Random Access Memory organized as 65,536 words by 16 bits. The K6R1016C1C uses 16 common input and output lines and has at output enable pin which operates faster than address access time at read cycle. FEATURES • Fast Acce | Samsung 三星 | | ||
64Kx16 Bit High-Speed CMOS Static RAM(5.0V Operating). GENERAL DESCRIPTION The K6R1016C1C is a 1,048,576-bit high-speed Static Random Access Memory organized as 65,536 words by 16 bits. The K6R1016C1C uses 16 common input and output lines and has at output enable pin which operates faster than address access time at read cycle. FEATURES • Fast Acce | Samsung 三星 | | ||
64Kx16 Bit High-Speed CMOS Static RAM(5.0V Operating). GENERAL DESCRIPTION The K6R1016C1C is a 1,048,576-bit high-speed Static Random Access Memory organized as 65,536 words by 16 bits. The K6R1016C1C uses 16 common input and output lines and has at output enable pin which operates faster than address access time at read cycle. FEATURES • Fast Acce | Samsung 三星 | | ||
64Kx16 Bit High-Speed CMOS Static RAM(5.0V Operating). GENERAL DESCRIPTION The K6R1016C1C is a 1,048,576-bit high-speed Static Random Access Memory organized as 65,536 words by 16 bits. The K6R1016C1C uses 16 common input and output lines and has at output enable pin which operates faster than address access time at read cycle. FEATURES • Fast Acce | Samsung 三星 | | ||
64Kx16 Bit High-Speed CMOS Static RAM(5.0V Operating). GENERAL DESCRIPTION The K6R1016C1C is a 1,048,576-bit high-speed Static Random Access Memory organized as 65,536 words by 16 bits. The K6R1016C1C uses 16 common input and output lines and has at output enable pin which operates faster than address access time at read cycle. FEATURES • Fast Acce | Samsung 三星 | | ||
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1016V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 65,536 words by 16 bits. The K6R1016V1D uses 16 common input and output lines and has at output enable pin which operates faster than address access time at read cycle. Also it allows that lo | Samsung 三星 | | ||
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate | Samsung 三星 | | ||
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). GENERAL DESCRIPTION The K6R1004C1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate | Samsung 三星 | | ||
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). GENERAL DESCRIPTION The K6R1004C1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate | Samsung 三星 | | ||
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate | Samsung 三星 | | ||
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate | Samsung 三星 | | ||
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). GENERAL DESCRIPTION The K6R1004C1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate | Samsung 三星 | | ||
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate | Samsung 三星 | | ||
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). GENERAL DESCRIPTION The K6R1004C1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate | Samsung 三星 | | ||
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). GENERAL DESCRIPTION The K6R1004C1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate | Samsung 三星 | | ||
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate | Samsung 三星 | | ||
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate | Samsung 三星 | | ||
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). GENERAL DESCRIPTION The K6R1004C1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate | Samsung 三星 | | ||
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate | Samsung 三星 | | ||
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). GENERAL DESCRIPTION The K6R1004C1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate | Samsung 三星 | | ||
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate | Samsung 三星 | | ||
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). GENERAL DESCRIPTION The K6R1004C1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate | Samsung 三星 | | ||
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate | Samsung 三星 | | ||
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). GENERAL DESCRIPTION The K6R1004C1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate | Samsung 三星 | | ||
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate | Samsung 三星 | | ||
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). GENERAL DESCRIPTION The K6R1004C1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate | Samsung 三星 | |
K6R1016C1产品属性
- 类型
描述
- 型号
K6R1016C1
- 制造商
SAMSUNG
- 制造商全称
Samsung semiconductor
- 功能描述
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAMSUNG |
11 |
全新原装!优势库存热卖中! |
|||||
SAMSUNG |
24+ |
TSOP |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
SAMSUNG/三星 |
20+ |
SOP44 |
67500 |
原装优势主营型号-可开原型号增税票 |
|||
SAM |
25+ |
SOJ |
3200 |
全新原装、诚信经营、公司现货销售 |
|||
SAM |
2000 |
SOJ |
6000 |
绝对原装自己现货 |
|||
SAM |
24+ |
SOJREEL |
2987 |
只售原装自家现货!诚信经营!欢迎来电! |
|||
SAMSUNG |
22+ |
SSOP |
5000 |
全新原装现货!自家库存! |
|||
SAMSUNG |
2025+ |
TSOP44 |
32560 |
原装优势绝对有货 |
|||
SAMSUNG |
23+ |
SOJ |
65480 |
||||
SAMSUNG/三星 |
2023+ |
TSOP |
8160 |
全新原装正品,优势价格 |
K6R1016C1规格书下载地址
K6R1016C1参数引脚图相关
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- K6R1016C1D-KI10
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- K6R1016C1C-TI10000
- K6R1016C1C-TC12
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- K6R1016C1C-I10
- K6R1016C1C-C15
- K6R1016C1C-C12
- K6R1016C1C-C10
- K6R1016C1C
- K6R1008V1D-UI10
- K6R1008V1D-UI08/10
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- K6R1008V1D-TC08
- K6R1008V1D-KI10
- K6R1008V1D-KI08/10
- K6R1008V1D-KI08
- K6R1008V1D-KC10
- K6R1008V1D-KC08
- K6R1008V1D-JTCI08/10
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- K6A65D
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- K60-090
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K6R1016C1数据表相关新闻
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2024-9-18K521H12ACH-B050
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K6R4016C1D-UI10 进口原装现货。
2020-10-20K6R1008C1D-UC15，K6R1008C1D-UI15，K6R1008V1B-TC10，K6R1008V1B-TC12，
K6R1008C1D-UC15，K6R1008C1D-UI15，K6R1008V1B-TC10，K6R1008V1B-TC12，
2020-2-24K6R4004C1C-JE12，K6R4004C1C-JE15，K6R4004C1C-JI10，K6R4004V1C-JI10，K6R4004C1B-TC，K6R4004V1C-JC10，K6R4004V1C-JC15，K6R4004V1C-JE10，K6R4004C1D-JE15，K6R4004CIC-TC
K6R4004C1C-JE12，K6R4004C1C-JE15，K6R4004C1C-JI10，K6R4004V1C-JI10，K6R4004C1B-TC，K6R4004V1C-JC10，K6R4004V1C-JC15，K6R4004V1C-JE10，K6R4004C1D-JE15，K6R4004CIC-TC
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K521F13ACA-B060
2019-11-4
DdatasheetPDF页码索引
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