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位置：首页 > IC中文资料第6200页 > K6R1016C1

型号 功能描述 生产厂家 企业 LOGO 操作
K6R1016C1

64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.

GENERAL DESCRIPTION The K6R1016V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 65,536 words by 16 bits. The K6R1016V1D uses 16 common input and output lines and has at output enable pin which operates faster than address access time at read cycle. Also it allows that lo

Samsung

三星

K6R1016C1

64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.

Samsung

三星

K6R1016C1C

64Kx16 Bit High-Speed CMOS Static RAM(5.0V Operating).

GENERAL DESCRIPTION The K6R1016C1C is a 1,048,576-bit high-speed Static Random Access Memory organized as 65,536 words by 16 bits. The K6R1016C1C uses 16 common input and output lines and has at output enable pin which operates faster than address access time at read cycle. FEATURES • Fast Acce

Samsung

三星

K6R1016C1C-C10

64Kx16 Bit High-Speed CMOS Static RAM(5.0V Operating).

GENERAL DESCRIPTION The K6R1016C1C is a 1,048,576-bit high-speed Static Random Access Memory organized as 65,536 words by 16 bits. The K6R1016C1C uses 16 common input and output lines and has at output enable pin which operates faster than address access time at read cycle. FEATURES • Fast Acce

Samsung

三星

K6R1016C1C-C12

64Kx16 Bit High-Speed CMOS Static RAM(5.0V Operating).

GENERAL DESCRIPTION The K6R1016C1C is a 1,048,576-bit high-speed Static Random Access Memory organized as 65,536 words by 16 bits. The K6R1016C1C uses 16 common input and output lines and has at output enable pin which operates faster than address access time at read cycle. FEATURES • Fast Acce

Samsung

三星

K6R1016C1C-C15

64Kx16 Bit High-Speed CMOS Static RAM(5.0V Operating).

GENERAL DESCRIPTION The K6R1016C1C is a 1,048,576-bit high-speed Static Random Access Memory organized as 65,536 words by 16 bits. The K6R1016C1C uses 16 common input and output lines and has at output enable pin which operates faster than address access time at read cycle. FEATURES • Fast Acce

Samsung

三星

K6R1016C1C-I10

64Kx16 Bit High-Speed CMOS Static RAM(5.0V Operating).

GENERAL DESCRIPTION The K6R1016C1C is a 1,048,576-bit high-speed Static Random Access Memory organized as 65,536 words by 16 bits. The K6R1016C1C uses 16 common input and output lines and has at output enable pin which operates faster than address access time at read cycle. FEATURES • Fast Acce

Samsung

三星

K6R1016C1C-I12

64Kx16 Bit High-Speed CMOS Static RAM(5.0V Operating).

GENERAL DESCRIPTION The K6R1016C1C is a 1,048,576-bit high-speed Static Random Access Memory organized as 65,536 words by 16 bits. The K6R1016C1C uses 16 common input and output lines and has at output enable pin which operates faster than address access time at read cycle. FEATURES • Fast Acce

Samsung

三星

K6R1016C1C-I15

64Kx16 Bit High-Speed CMOS Static RAM(5.0V Operating).

GENERAL DESCRIPTION The K6R1016C1C is a 1,048,576-bit high-speed Static Random Access Memory organized as 65,536 words by 16 bits. The K6R1016C1C uses 16 common input and output lines and has at output enable pin which operates faster than address access time at read cycle. FEATURES • Fast Acce

Samsung

三星

K6R1016C1D

64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.

GENERAL DESCRIPTION The K6R1016V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 65,536 words by 16 bits. The K6R1016V1D uses 16 common input and output lines and has at output enable pin which operates faster than address access time at read cycle. Also it allows that lo

Samsung

三星

K6R1016C1D-EC10

64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.

GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate

Samsung

三星

K6R1016C1D-EC10

256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).

GENERAL DESCRIPTION The K6R1004C1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate

Samsung

三星

K6R1016C1D-EI10

256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).

GENERAL DESCRIPTION The K6R1004C1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate

Samsung

三星

K6R1016C1D-EI10

64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.

GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate

Samsung

三星

K6R1016C1D-JC10

64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.

GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate

Samsung

三星

K6R1016C1D-JC10

256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).

GENERAL DESCRIPTION The K6R1004C1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate

Samsung

三星

K6R1016C1D-JI10

64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.

GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate

Samsung

三星

K6R1016C1D-JI10

256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).

GENERAL DESCRIPTION The K6R1004C1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate

Samsung

三星

K6R1016C1D-KC10

256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).

GENERAL DESCRIPTION The K6R1004C1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate

Samsung

三星

K6R1016C1D-KC10

64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.

GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate

Samsung

三星

K6R1016C1D-KI10

64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.

GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate

Samsung

三星

K6R1016C1D-KI10

256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).

GENERAL DESCRIPTION The K6R1004C1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate

Samsung

三星

K6R1016C1D-TC10

64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.

GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate

Samsung

三星

K6R1016C1D-TC10

256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).

GENERAL DESCRIPTION The K6R1004C1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate

Samsung

三星

K6R1016C1D-TI10

64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.

GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate

Samsung

三星

K6R1016C1D-TI10

256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).

GENERAL DESCRIPTION The K6R1004C1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate

Samsung

三星

K6R1016C1D-UC10

64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.

GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate

Samsung

三星

K6R1016C1D-UC10

256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).

GENERAL DESCRIPTION The K6R1004C1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate

Samsung

三星

K6R1016C1D-UI10

256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).

GENERAL DESCRIPTION The K6R1004C1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate

Samsung

三星

K6R1016C1D-UI10

64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.

GENERAL DESCRIPTION The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricate

Samsung

三星

K6R1016C1产品属性

  • 类型

    描述

  • 型号

    K6R1016C1

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.

K6R1016C1供应商更多...

更新时间：2026-1-3 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市高捷芯城科技有限公司
K6R1016C1D-UI10
SAMSUNG(三星)
25+
N/A
18798
原装正品现货,原厂订货,可支持含税原型号开票。
询价
深圳市凌旭科技有限公司
K6R1016C1D-KI10
SAMSUNG
2016+
SOJ44
3500
只做原装,假一罚十,公司可开17%增值税发票!
询价
深圳市得捷芯城科技有限公司
K6R1016C1D-UI10
SAMSUNG(三星)
25+
N/A
18798
原装正品现货,原厂订货,可支持含税原型号开票。
询价
深圳市华斯顿科技有限公司
K6R1016C1C-JC15
SAMSUNG
25+23+
SOJ
39605
绝对原装正品全新进口深圳现货
询价
深圳市坤融电子科技有限公司
K6R1016C1D-JC10/K6R1016C1D-JI10
SAMSUNG/三星
2025+
SOJ44
4866
原装进口价格优 请找坤融电子!
询价
深圳市毅创腾电子科技有限公司
K6R1016C1C-JC15
SAM
23+
SOJ/44
7000
绝对全新原装!100%保质量特价!请放心订购!
询价
标准国际(香港)有限公司
K6R1016C1D-TI10
SAMSUNG
25+
11
全新原装!优势库存热卖中!
询价
深圳市向鸿伟业电子有限公司
K6R1016C1C-JC12
SAMSUNG/三星
2402+
SOJ44
8324
原装正品!实单价优!
询价
深圳市壹芯创科技有限公司
K6R1016C1C-JC10
SAMSUNG
22+
SOJ
5000
全新原装现货!自家库存!
询价
上海金庆电子技术有限公司
K6R1016C1C-JC12
SEC
新
92
全新原装 货期两周
询价

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