位置：首页 > IC中文资料第5526页 > K6F8016U6
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
K6F8016U6 | 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM GENERAL DESCRIPTION The K6F8016U6B families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support industrial operating temperature ranges and have chip scale package for user flexibility of system design. The families also support low data retention voltage for b | Samsung 三星 |   | |
K6F8016U6 | 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM | Samsung 三星 | | |
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM | Samsung 三星 | | ||
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM 文件：154.36 Kbytes Page：9 Pages | Samsung 三星 | | ||
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM 文件：154.36 Kbytes Page：9 Pages | Samsung 三星 | | ||
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM | Samsung 三星 | | ||
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM 文件：154.36 Kbytes Page：9 Pages | Samsung 三星 | | ||
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM 文件：154.36 Kbytes Page：9 Pages | Samsung 三星 | | ||
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM 文件：154.36 Kbytes Page：9 Pages | Samsung 三星 | | ||
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM GENERAL DESCRIPTION The K6F8016U6B families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support industrial operating temperature ranges and have chip scale package for user flexibility of system design. The families also support low data retention voltage for b | Samsung 三星 | | ||
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM GENERAL DESCRIPTION The K6F8016U6C families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support industrial operating temperature ranges and have chip scale package for user flexibility of system design. The families also support low data retention voltage for b | Samsung 三星 | |
K6F8016U6产品属性
- 类型
描述
- 型号
K6F8016U6
- 制造商
SAMSUNG
- 制造商全称
Samsung semiconductor
- 功能描述
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAMSUMG |
1019+ |
BGA |
140 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
SAMSUNG/三星 |
24+ |
35968 |
原装正品现货供应 |
||||
SEC |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
SEC |
23+ |
BGA |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
|||
SAMSUNG/三星 |
24+ |
BGA |
880000 |
明嘉莱只做原装正品现货 |
|||
SAMSUNG |
25+23+ |
BGA |
44000 |
绝对原装正品全新进口深圳现货 |
|||
SAMSUNG |
22+ |
BGA |
8000 |
原装正品支持实单 |
|||
SM |
23+ |
65480 |
|||||
SAMSUNG |
24+ |
BGA |
7850 |
只做原装正品现货或订货假一赔十! |
|||
SEC |
23+ |
BGA |
5500 |
现货,全新原装 |
K6F8016U6规格书下载地址
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K6F8016U6数据表相关新闻
K521H12ACH-B050
K521H12ACH-B050 HYNIX 2020+ BGA K524G2GACJ-B050 SKHYNIX 2020+ BGA K521F57ACM-A060 HYNIX 2020+ BGA K524F2HACA-B050 SKHYNIX 2020+ BGA K521H12ACB-B060 HYNIX 2020+ BGA K524G2GACI-BO50 HYNIX 2020+ BGA K521F57ACC-B050000 HYNIX 2020+ BGA PM8018 HYNIX 2020 BGA PM8015 SKHYNIX 2020 BGA EMMC08G-W325 S
2021-5-26K5-1658UN-01
商品目录 行程开关 电路结构 SPST-NO 作用力 20gf 额定电压 DC 12V (DC) 额定电流 50mA (DC) 开关功能 Off-Mom
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K6R4016C1D-UI10 进口原装现货。
2020-10-20K6R1008C1D-UC15，K6R1008C1D-UI15，K6R1008V1B-TC10，K6R1008V1B-TC12，
K6R1008C1D-UC15，K6R1008C1D-UI15，K6R1008V1B-TC10，K6R1008V1B-TC12，
2020-2-24K6R4004C1C-JE12，K6R4004C1C-JE15，K6R4004C1C-JI10，K6R4004V1C-JI10，K6R4004C1B-TC，K6R4004V1C-JC10，K6R4004V1C-JC15，K6R4004V1C-JE10，K6R4004C1D-JE15，K6R4004CIC-TC
K6R4004C1C-JE12，K6R4004C1C-JE15，K6R4004C1C-JI10，K6R4004V1C-JI10，K6R4004C1B-TC，K6R4004V1C-JC10，K6R4004V1C-JC15，K6R4004V1C-JE10，K6R4004C1D-JE15，K6R4004CIC-TC
2020-1-1K521F13ACA-B060
K521F13ACA-B060
2019-11-4
DdatasheetPDF页码索引
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