位置：首页 > IC中文资料第5526页 > K6F8016U6
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
K6F8016U6 | 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM GENERAL DESCRIPTION The K6F8016U6B families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support industrial operating temperature ranges and have chip scale package for user flexibility of system design. The families also support low data retention voltage for b | SAMSUNG 三星 |   | |
K6F8016U6 | 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM | SAMSUNG 三星 | | |
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM | SAMSUNG 三星 | | ||
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM 文件：154.36 Kbytes Page：9 Pages | SAMSUNG 三星 | | ||
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM 文件：154.36 Kbytes Page：9 Pages | SAMSUNG 三星 | | ||
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM | SAMSUNG 三星 | | ||
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM 文件：154.36 Kbytes Page：9 Pages | SAMSUNG 三星 | | ||
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM 文件：154.36 Kbytes Page：9 Pages | SAMSUNG 三星 | | ||
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM 文件：154.36 Kbytes Page：9 Pages | SAMSUNG 三星 | | ||
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM GENERAL DESCRIPTION The K6F8016U6B families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support industrial operating temperature ranges and have chip scale package for user flexibility of system design. The families also support low data retention voltage for b | SAMSUNG 三星 | | ||
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM GENERAL DESCRIPTION The K6F8016U6C families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support industrial operating temperature ranges and have chip scale package for user flexibility of system design. The families also support low data retention voltage for b | SAMSUNG 三星 | |
K6F8016U6产品属性
- 类型
描述
- 型号
K6F8016U6
- 制造商
SAMSUNG
- 制造商全称
Samsung semiconductor
- 功能描述
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SEC |
2025+ |
BGA |
5000 |
原装进口价格优 请找坤融电子! |
|||
SAMSUNG |
2016+ |
BGA |
1980 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
SEC |
24+ |
SMD |
9600 |
原装现货,优势供应,支持实单! |
|||
SAMSUNG |
23+ |
BGA |
8560 |
受权代理!全新原装现货特价热卖! |
|||
SAMSUNG |
24+ |
BGA |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
SUMSUNG |
2026+ |
BGA |
12500 |
全新原装正品,本司专业配单,大单小单都配 |
|||
SAMSUNG(三星) |
25+ |
N/A |
21000 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
SAMSUNG |
1923+ |
BGA |
9865 |
原装进口现货库存专业工厂研究所配单供货 |
|||
SEC |
2318+ |
BGA |
4852 |
十年专业专注 优势渠道商正品保证公司现货 |
|||
SAMSUNG |
25+23+ |
BGA |
44000 |
绝对原装正品全新进口深圳现货 |
K6F8016U6规格书下载地址
K6F8016U6参数引脚图相关
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K6F8016U6数据表相关新闻
K521H12ACH-B050
K521H12ACH-B050 HYNIX 2020+ BGA K524G2GACJ-B050 SKHYNIX 2020+ BGA K521F57ACM-A060 HYNIX 2020+ BGA K524F2HACA-B050 SKHYNIX 2020+ BGA K521H12ACB-B060 HYNIX 2020+ BGA K524G2GACI-BO50 HYNIX 2020+ BGA K521F57ACC-B050000 HYNIX 2020+ BGA PM8018 HYNIX 2020 BGA PM8015 SKHYNIX 2020 BGA EMMC08G-W325 S
2021-5-26K5-1658UN-01
商品目录 行程开关 电路结构 SPST-NO 作用力 20gf 额定电压 DC 12V (DC) 额定电流 50mA (DC) 开关功能 Off-Mom
2020-10-28K6R4016C1D-UI10 静态存储器芯片 进口原装现货。
K6R4016C1D-UI10 进口原装现货。
2020-10-20K6R1008C1D-UC15，K6R1008C1D-UI15，K6R1008V1B-TC10，K6R1008V1B-TC12，
K6R1008C1D-UC15，K6R1008C1D-UI15，K6R1008V1B-TC10，K6R1008V1B-TC12，
2020-2-24K6R4004C1C-JE12，K6R4004C1C-JE15，K6R4004C1C-JI10，K6R4004V1C-JI10，K6R4004C1B-TC，K6R4004V1C-JC10，K6R4004V1C-JC15，K6R4004V1C-JE10，K6R4004C1D-JE15，K6R4004CIC-TC
K6R4004C1C-JE12，K6R4004C1C-JE15，K6R4004C1C-JI10，K6R4004V1C-JI10，K6R4004C1B-TC，K6R4004V1C-JC10，K6R4004V1C-JC15，K6R4004V1C-JE10，K6R4004C1D-JE15，K6R4004CIC-TC
2020-1-1K521F13ACA-B060
K521F13ACA-B060
2019-11-4
DdatasheetPDF页码索引
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