位置：首页 > IC中文资料第5588页 > K6F4016
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM GENERAL DESCRIPTION The K6F4016U6G families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The family also supports low data retention voltage for battery ba | Samsung 三星 |   | ||
256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM GENERAL DESCRIPTION The K6F4016U6G families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The family also supports low data retention voltage for battery ba | Samsung 三星 | | ||
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM 文件：119.26 Kbytes Page：9 Pages | Samsung 三星 | | ||
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM 文件：119.26 Kbytes Page：9 Pages | Samsung 三星 | | ||
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM 文件：119.26 Kbytes Page：9 Pages | Samsung 三星 | | ||
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM 文件：119.26 Kbytes Page：9 Pages | Samsung 三星 | | ||
256K x 16bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet | Samsung 三星 | | ||
256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM | Samsung 三星 | | ||
256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM 文件：173.87 Kbytes Page：9 Pages | Samsung 三星 | | ||
256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM | Samsung 三星 | | ||
256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM 文件：173.87 Kbytes Page：9 Pages | Samsung 三星 | | ||
256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM 文件：173.87 Kbytes Page：9 Pages | Samsung 三星 | |
K6F4016产品属性
- 类型
描述
- 型号
K6F4016
- 制造商
SAMSUNG
- 制造商全称
Samsung semiconductor
- 功能描述
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAMSUNG |
24+ |
6980 |
原装现货,可开13%税票 |
||||
SAMSUNG |
05+ |
原厂原装 |
1001 |
只做全新原装真实现货供应 |
|||
SAMSUNG/三星 |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
SEC |
05+ |
QFN |
103 |
原装现货海量库存欢迎咨询 |
|||
SAMSUNG |
24+ |
BGA |
1200 |
||||
SAMSUNG原装正品专卖 |
NEW |
BGA |
18863 |
全新原装正品,价格优势,长期供应,量大可订 |
|||
SAMSUNG/三星 |
22+ |
TBGA-48 |
8000 |
原装正品支持实单 |
|||
SAMSUNG |
三年内 |
1983 |
只做原装正品 |
||||
SAMSUNG |
2023+ |
原厂封装 |
50000 |
原装现货 |
|||
SAMSUNG/三星 |
25+ |
BGA |
880000 |
明嘉莱只做原装正品现货 |
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K6F4016规格书下载地址
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K6F4016数据表相关新闻
K521H12ACH-B050
K521H12ACH-B050 HYNIX 2020+ BGA K524G2GACJ-B050 SKHYNIX 2020+ BGA K521F57ACM-A060 HYNIX 2020+ BGA K524F2HACA-B050 SKHYNIX 2020+ BGA K521H12ACB-B060 HYNIX 2020+ BGA K524G2GACI-BO50 HYNIX 2020+ BGA K521F57ACC-B050000 HYNIX 2020+ BGA PM8018 HYNIX 2020 BGA PM8015 SKHYNIX 2020 BGA EMMC08G-W325 S
2021-5-26K5-1658UN-01
商品目录 行程开关 电路结构 SPST-NO 作用力 20gf 额定电压 DC 12V (DC) 额定电流 50mA (DC) 开关功能 Off-Mom
2020-10-28K6R4016C1D-UI10 静态存储器芯片 进口原装现货。
K6R4016C1D-UI10 进口原装现货。
2020-10-20K6R1008C1D-UC15，K6R1008C1D-UI15，K6R1008V1B-TC10，K6R1008V1B-TC12，
K6R1008C1D-UC15，K6R1008C1D-UI15，K6R1008V1B-TC10，K6R1008V1B-TC12，
2020-2-24K6R4004C1C-JE12，K6R4004C1C-JE15，K6R4004C1C-JI10，K6R4004V1C-JI10，K6R4004C1B-TC，K6R4004V1C-JC10，K6R4004V1C-JC15，K6R4004V1C-JE10，K6R4004C1D-JE15，K6R4004CIC-TC
K6R4004C1C-JE12，K6R4004C1C-JE15，K6R4004C1C-JI10，K6R4004V1C-JI10，K6R4004C1B-TC，K6R4004V1C-JC10，K6R4004V1C-JC15，K6R4004V1C-JE10，K6R4004C1D-JE15，K6R4004CIC-TC
2020-1-1K521F13ACA-B060
K521F13ACA-B060
2019-11-4
DdatasheetPDF页码索引
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