位置：首页 > IC中文资料第6032页 > K6F2016V4E-EF70
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
K6F2016V4E-EF70 | 128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM 文件：158.04 Kbytes Page：9 Pages | SAMSUNG 三星 |   |
K6F2016V4E-EF70产品属性
- 类型
描述
- 型号
K6F2016V4E-EF70
- 制造商
SAMSUNG
- 制造商全称
Samsung semiconductor
- 功能描述
128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SEC |
23+ |
BGA |
20000 |
全新原装假一赔十 |
|||
SEC |
BGA |
10 |
全新原装进口自己库存优势 |
||||
SAMSUNG/三星 |
2026+ |
FBGA |
996880 |
只做原装,欢迎来电资询 |
|||
SAM |
24+ |
BGA |
880000 |
明嘉莱只做原装正品现货 |
|||
SAM |
21+ |
BGA |
1709 |
||||
SAM |
BGA |
9850 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
SAM |
23+ |
BGA |
65480 |
||||
SAM |
23+ |
BGA |
3000 |
原装正品假一罚百!可开增票! |
|||
CMOSSRAM |
24+ |
BGA |
5825 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
SAMSUNG |
05+ |
原厂原装 |
1051 |
只做全新原装真实现货供应 |
K6F2016V4E-EF70芯片相关品牌
K6F2016V4E-EF70规格书下载地址
K6F2016V4E-EF70参数引脚图相关
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K6F2016V4E-EF70数据表相关新闻
K521H12ACH-B050
K521H12ACH-B050 HYNIX 2020+ BGA K524G2GACJ-B050 SKHYNIX 2020+ BGA K521F57ACM-A060 HYNIX 2020+ BGA K524F2HACA-B050 SKHYNIX 2020+ BGA K521H12ACB-B060 HYNIX 2020+ BGA K524G2GACI-BO50 HYNIX 2020+ BGA K521F57ACC-B050000 HYNIX 2020+ BGA PM8018 HYNIX 2020 BGA PM8015 SKHYNIX 2020 BGA EMMC08G-W325 S
2021-5-26K5-1658UN-01
商品目录 行程开关 电路结构 SPST-NO 作用力 20gf 额定电压 DC 12V (DC) 额定电流 50mA (DC) 开关功能 Off-Mom
2020-10-28K6R4016C1D-UI10 静态存储器芯片 进口原装现货。
K6R4016C1D-UI10 进口原装现货。
2020-10-20K6R1008C1D-UC15，K6R1008C1D-UI15，K6R1008V1B-TC10，K6R1008V1B-TC12，
K6R1008C1D-UC15，K6R1008C1D-UI15，K6R1008V1B-TC10，K6R1008V1B-TC12，
2020-2-24K6R4004C1C-JE12，K6R4004C1C-JE15，K6R4004C1C-JI10，K6R4004V1C-JI10，K6R4004C1B-TC，K6R4004V1C-JC10，K6R4004V1C-JC15，K6R4004V1C-JE10，K6R4004C1D-JE15，K6R4004CIC-TC
K6R4004C1C-JE12，K6R4004C1C-JE15，K6R4004C1C-JI10，K6R4004V1C-JI10，K6R4004C1B-TC，K6R4004V1C-JC10，K6R4004V1C-JC15，K6R4004V1C-JE10，K6R4004C1D-JE15，K6R4004CIC-TC
2020-1-1K521F13ACA-B060
K521F13ACA-B060
2019-11-4
DdatasheetPDF页码索引
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