256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM

GENERAL DESCRIPTION The K6F2008U2E families are fabricated by SAMSUNG¢s advanced Full CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also supports low data retention voltage for

256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM

GENERAL DESCRIPTION The K6F2008U2E families are fabricated by SAMSUNG¢s advanced Full CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also supports low data retention voltage for

256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM

GENERAL DESCRIPTION The K6F2008U2E families are fabricated by SAMSUNG¢s advanced Full CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also supports low data retention voltage for

256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM

GENERAL DESCRIPTION The K6F2008U2E families are fabricated by SAMSUNG¢s advanced Full CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also supports low data retention voltage for

256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM

256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM

256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM

GENERAL DESCRIPTION The K6F2008U2E families are fabricated by SAMSUNG¢s advanced Full CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also supports low data retention voltage for