位置：首页 > IC中文资料第6085页 > K6F1016U4C
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM GENERAL DESCRIPTION The K6F1016U4C families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The families also support low data retention voltage for battery b | Samsung 三星 |   | ||
64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM GENERAL DESCRIPTION The K6F1016U4C families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The families also support low data retention voltage for battery b | Samsung 三星 | | ||
64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM GENERAL DESCRIPTION The K6F1016U4C families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The families also support low data retention voltage for battery b | Samsung 三星 | | ||
64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM GENERAL DESCRIPTION The K6F1016U4C families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The families also support low data retention voltage for battery b | Samsung 三星 | | ||
64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM | Samsung 三星 | | ||
64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM 文件：162.8 Kbytes Page：9 Pages | Samsung 三星 | | ||
64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM 文件：162.8 Kbytes Page：9 Pages | Samsung 三星 | | ||
64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM GENERAL DESCRIPTION The K6F1016U4C families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The families also support low data retention voltage for battery b | Samsung 三星 | |
K6F1016U4C产品属性
- 类型
描述
- 型号
K6F1016U4C
- 制造商
SAMSUNG
- 制造商全称
Samsung semiconductor
- 功能描述
64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAMSUNG/三星 |
2407+ |
BGA |
7750 |
原装现货!实单直说!特价! |
|||
SEC |
22+ |
BGA |
1000 |
全新原装现货!自家库存! |
|||
SEC |
24+ |
BGA |
9600 |
原装现货,优势供应,支持实单! |
|||
SAMSUNG |
22+ |
BGA |
8000 |
原装正品支持实单 |
|||
SAM |
24+ |
6000 |
|||||
SAMSUNG |
1923+ |
BGA |
9865 |
原装进口现货库存专业工厂研究所配单供货 |
|||
SAMSUNG/三星 |
2022+ |
553 |
全新原装 货期两周 |
||||
SAMSUNG/三星 |
23+ |
BGA |
50000 |
全新原装正品现货,支持订货 |
|||
BGA |
22+ |
BGA |
30000 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
|||
NA |
25+ |
原厂原封可拆样 |
54687 |
百分百原装现货 实单必成 |
K6F1016U4C规格书下载地址
K6F1016U4C参数引脚图相关
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K6F1016U4C数据表相关新闻
K521H12ACH-B050
K521H12ACH-B050 HYNIX 2020+ BGA K524G2GACJ-B050 SKHYNIX 2020+ BGA K521F57ACM-A060 HYNIX 2020+ BGA K524F2HACA-B050 SKHYNIX 2020+ BGA K521H12ACB-B060 HYNIX 2020+ BGA K524G2GACI-BO50 HYNIX 2020+ BGA K521F57ACC-B050000 HYNIX 2020+ BGA PM8018 HYNIX 2020 BGA PM8015 SKHYNIX 2020 BGA EMMC08G-W325 S
2021-5-26K5-1658UN-01
商品目录 行程开关 电路结构 SPST-NO 作用力 20gf 额定电压 DC 12V (DC) 额定电流 50mA (DC) 开关功能 Off-Mom
2020-10-28K6R4016C1D-UI10 静态存储器芯片 进口原装现货。
K6R4016C1D-UI10 进口原装现货。
2020-10-20K6R1008C1D-UC15，K6R1008C1D-UI15，K6R1008V1B-TC10，K6R1008V1B-TC12，
K6R1008C1D-UC15，K6R1008C1D-UI15，K6R1008V1B-TC10，K6R1008V1B-TC12，
2020-2-24K6R4004C1C-JE12，K6R4004C1C-JE15，K6R4004C1C-JI10，K6R4004V1C-JI10，K6R4004C1B-TC，K6R4004V1C-JC10，K6R4004V1C-JC15，K6R4004V1C-JE10，K6R4004C1D-JE15，K6R4004CIC-TC
K6R4004C1C-JE12，K6R4004C1C-JE15，K6R4004C1C-JI10，K6R4004V1C-JI10，K6R4004C1B-TC，K6R4004V1C-JC10，K6R4004V1C-JC15，K6R4004V1C-JE10，K6R4004C1D-JE15，K6R4004CIC-TC
2020-1-1K521F13ACA-B060
K521F13ACA-B060
2019-11-4
DdatasheetPDF页码索引
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