型号 功能描述 生产厂家 企业 LOGO 操作
K4T51083QE

512Mb E-die DDR2 SDRAM Specification

The 512Mb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 4 banks, 16Mbit x 8 I/Os x 4banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The chip is designed to comply

Samsung

三星

512Mb B-die DDR2 SDRAM

DDR2 SDRAM The 512Mb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 4banks, 16Mbit x 8 I/Os x 4 banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 533Mb/sec/pin (DDR2-533) for general applications. The chip

Samsung

三星

512Mb B-die DDR2 SDRAM

DDR2 SDRAM The 512Mb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 4banks, 16Mbit x 8 I/Os x 4 banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 533Mb/sec/pin (DDR2-533) for general applications. The chip

Samsung

三星

512Mb C-die DDR2 SDRAM

The 512Mb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 4 banks, 16Mbit x 8 I/Os x 4banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The chip is designed to comply wi

Samsung

三星

512Mb C-die DDR2 SDRAM

The 512Mb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 4 banks, 16Mbit x 8 I/Os x 4banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The chip is designed to comply wi

Samsung

三星

512Mb C-die DDR2 SDRAM

The 512Mb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 4 banks, 16Mbit x 8 I/Os x 4banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The chip is designed to comply wi

Samsung

三星

K4T51083QE产品属性

  • 类型

    描述

  • 型号

    K4T51083QE

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    512Mb E-die DDR2 SDRAM Specification

更新时间:2025-11-21 16:42:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SAMSUNG/三星
22+
BGA
8000
原装正品支持实单
SAMSUNG/三星
23+
BGA
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
SAMSUN
23+
FBGA60
9560
专业配单保证原装正品假一罚十
SAMSUNG/三星
2223+
FBGA60
26800
只做原装正品假一赔十为客户做到零风险
SAMSUNG
6000
面议
19
BGA
SAMSUNG/三星
22+
FBGA60
9565
SAMSUNG/三星
2402+
BGA
8324
原装正品!实单价优!
SAMSUNG
23+24
BGA
29650
原装正品优势渠道价格合理.可开13%增值税发票
SAMSUNG
704
BGA
3300
全新原装现货100真实自己公司
SAMSUNG
25+23+
BGA
56053
绝对原装正品现货,全新深圳原装进口现货

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