型号 功能描述 生产厂家 企业 LOGO 操作
K4T51083QE

512Mb E-die DDR2 SDRAM Specification

The 512Mb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 4 banks, 16Mbit x 8 I/Os x 4banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The chip is designed to comply

SAMSUNG

三星

512Mb B-die DDR2 SDRAM

DDR2 SDRAM The 512Mb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 4banks, 16Mbit x 8 I/Os x 4 banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 533Mb/sec/pin (DDR2-533) for general applications. The chip

SAMSUNG

三星

512Mb B-die DDR2 SDRAM

DDR2 SDRAM The 512Mb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 4banks, 16Mbit x 8 I/Os x 4 banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 533Mb/sec/pin (DDR2-533) for general applications. The chip

SAMSUNG

三星

512Mb C-die DDR2 SDRAM

The 512Mb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 4 banks, 16Mbit x 8 I/Os x 4banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The chip is designed to comply wi

SAMSUNG

三星

512Mb C-die DDR2 SDRAM

The 512Mb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 4 banks, 16Mbit x 8 I/Os x 4banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The chip is designed to comply wi

SAMSUNG

三星

512Mb C-die DDR2 SDRAM

The 512Mb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 4 banks, 16Mbit x 8 I/Os x 4banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The chip is designed to comply wi

SAMSUNG

三星

K4T51083QE产品属性

  • 类型

    描述

  • 型号

    K4T51083QE

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    512Mb E-die DDR2 SDRAM Specification

更新时间:2026-3-2 23:55:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SAMSUNG
08+
BGA
1120
一级代理,专注军工、汽车、医疗、工业、新能源、电力
SAMSUNG(三星)
25+
N/A
20948
样件支持,可原厂排单订货!
SAMSUNG(三星)
25+
N/A
21000
正规渠道,免费送样。支持账期,BOM一站式配齐
SAMSUNG/三星
2026+
BGA
54648
百分百原装现货 实单必成 欢迎询价
SAMSUNG/三星
2223+
FBGA60
26800
只做原装正品假一赔十为客户做到零风险
SAMSUNG
存储器
FBGA
40356
SAMSUNG存储芯片K4T51083QE-ZCE7即刻询购立享优惠#长期有货
SAMSUN
23+
FBGA60
9560
专业配单保证原装正品假一罚十
SAMSUNG/三星
2450+
BGA
9850
只做原装正品现货或订货假一赔十!
SAMSUNG
2138+
BGA
8960
专营BGA,QFP原装现货,假一赔十
SAM
23+
NA
373
专做原装正品,假一罚百!

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