位置：首页 > IC中文资料第5613页 > K4T1G164QE-HCE7000
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
K4T1G164QE-HCE7000 | 1Gb E-die DDR2 SDRAM 60FBGA/84FBGA with Lead-Free & Halogen-Free (RoHS compliant) 1Gb E-die DDR2 SDRAM 60FBGA/84FBGA with Lead-Free & Halogen-Free (RoHS compliant) The 1Gb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 8 | Samsung 三星 |   | |
K4T1G164QE-HCE7000 | 1Gb E-die DDR2 SDRAM 60FBGA/84FBGA with Lead-Free & Halogen-Free (RoHS compliant) | Samsung 三星 | |
K4T1G164QE-HCE7000产品属性
- 类型
描述
- 型号
K4T1G164QE-HCE7000
- 制造商
SAMSUNG
- 制造商全称
Samsung semiconductor
- 功能描述
1Gb E-die DDR2 SDRAM 60FBGA/84FBGA with Lead-Free & Halogen-Free(RoHS compliant)
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SANSUNG |
23+ |
BGA |
50000 |
全新原装正品现货,支持订货 |
|||
SAMSUNG |
17+ |
BGA |
6200 |
100%原装正品现货 |
|||
SAMSUNG |
10+ |
FBGA84 |
6000 |
绝对原装自己现货 |
|||
SAMSUNG |
24+ |
FBGA84 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
SAMSUNG/三星 |
23+ |
BGA |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
|||
Samsung |
24+ |
FBGA |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
SAMSUNG |
22+ |
FBGA |
5000 |
全新原装现货!价格优惠!可长期 |
|||
SAMSUNG |
23+ |
NA |
20 |
专业电子元器件供应链正迈科技特价代理特价，原装元器件供应，支持开发样品 |
|||
SAMSUNG/三星 |
22+ |
FBGA84 |
12245 |
现货,原厂原装假一罚十! |
|||
SAMSUNG/三星 |
24+ |
FBGA |
37500 |
只做正品原装现货 |
K4T1G164QE-HCE7000芯片相关品牌
K4T1G164QE-HCE7000规格书下载地址
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K4T1G164QE-HCE7000数据表相关新闻
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TAPE ON REEL / SRAM-PSEUDO / 2MX16 PSEUDO / PW751 BGA CODE 48 BALL 6 X 8 / VFBGA-48 / 70 NS / -40°~+85°C(IND) / RoHS / 1.70-1.95V / TAPE ON REEL / EOL / 1000 PCS
2019-12-10K4T1G084QJ-BCE7
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2019-10-28
DdatasheetPDF页码索引
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