型号 功能描述 生产厂家 企业 LOGO 操作
K4T1G084QE

Consumer Memory

SDRAM Product Guide Memory Division November 2007

Samsung

三星

1Gb E-die DDR2 SDRAM

The 1Gb DDR2 SDRAM is organized asa 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. Key Features • JEDEC standard VDD= 1

Samsung

三星

1Gb E-die DDR2 SDRAM

The 1Gb DDR2 SDRAM is organized asa 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. Key Features • JEDEC standard VDD= 1

Samsung

三星

1Gb E-die DDR2 SDRAM

The 1Gb DDR2 SDRAM is organized asa 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. Key Features • JEDEC standard VDD= 1

Samsung

三星

1Gb C-die DDR2 SDRAM Specification

1Gb C-die DDR2 SDRAM Specification 60FBGA & 84FBGA with Pb-Free The 1Gb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 8 banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The chip is designed

Samsung

三星

1Gb D-die DDR2 SDRAM Specification

The 1Gb DDR2 SDRAM is organized as a 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The chip is designed to comply with the following key DDR2 S

Samsung

三星

Consumer Memory

SDRAM Product Guide Memory Division November 2007

Samsung

三星

1Gb F-die DDR2 SDRAM

1Gb F-die DDR2 SDRAM 60FBGA/84FBGA with Lead-Free & Halogen-Free (RoHS compliant) The 1Gb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 8

Samsung

三星

K4T1G084QE产品属性

  • 类型

    描述

  • 型号

    K4T1G084QE

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    Consumer Memory

更新时间:2025-11-17 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SAMSUNG(三星)
24+
NA/
8735
原厂直销,现货供应,账期支持!
SAMSUNG
2016+
BGA
5000
全新原装现货,只售原装,假一赔十!
SEC
23+
BGA
20000
全新原装假一赔十
Samsung
24+
BGA
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
SAMSUNG/三星
24+
BGA
20000
不忘初芯-只做原装正品
SAMSUNG/三星
22+
BGA
100000
代理渠道/只做原装/可含税
SAMSUNG/三星
25+
FBGA-60.
54815
百分百原装现货,实单必成,欢迎询价
SAMSUNG
24+
FBGA
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
SAMSUNG
存储器
BGA
40311
SAMSUNG存储芯片K4T1G084QE-HCF8即刻询购立享优惠#长期有货
SAMSUNG
12+
BGA
11
一级代理,专注军工、汽车、医疗、工业、新能源、电力

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