型号 功能描述 生产厂家 企业 LOGO 操作
K4T1G084QE

Consumer Memory

SDRAM Product Guide Memory Division November 2007

SAMSUNG

三星

1Gb E-die DDR2 SDRAM

The 1Gb DDR2 SDRAM is organized asa 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. Key Features • JEDEC standard VDD= 1

SAMSUNG

三星

1Gb E-die DDR2 SDRAM

The 1Gb DDR2 SDRAM is organized asa 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. Key Features • JEDEC standard VDD= 1

SAMSUNG

三星

1Gb E-die DDR2 SDRAM

The 1Gb DDR2 SDRAM is organized asa 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. Key Features • JEDEC standard VDD= 1

SAMSUNG

三星

1Gb C-die DDR2 SDRAM Specification

1Gb C-die DDR2 SDRAM Specification 60FBGA & 84FBGA with Pb-Free The 1Gb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 8 banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The chip is designed

SAMSUNG

三星

1Gb D-die DDR2 SDRAM Specification

The 1Gb DDR2 SDRAM is organized as a 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The chip is designed to comply with the following key DDR2 S

SAMSUNG

三星

Consumer Memory

SDRAM Product Guide Memory Division November 2007

SAMSUNG

三星

1Gb F-die DDR2 SDRAM

1Gb F-die DDR2 SDRAM 60FBGA/84FBGA with Lead-Free & Halogen-Free (RoHS compliant) The 1Gb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 8

SAMSUNG

三星

K4T1G084QE产品属性

  • 类型

    描述

  • 型号

    K4T1G084QE

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    Consumer Memory

更新时间:2026-1-30 11:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SAMSUNG
2016+
BGA
5000
全新原装现货,只售原装,假一赔十!
SAMSUNG/三星
25+
FBGA
13800
原装,请咨询
SAMSUNG(三星)
25+
N/A
21000
原装正品现货,原厂订货,可支持含税原型号开票。
SAMSUNG
25+
BGA
30000
代理全新原装现货,价格优势
SAMSUNG/三星
23+
BGA
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
SAMSUNG/三星
2025+
BGA
3000
原装进口价格优 请找坤融电子!
XICOR
23+
SOP-8
69820
终端可以免费供样,支持BOM配单!
SAMSUNG/三星
2447
BGA
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
Samsung
25+
FBGA
9500
百分百原装正品 真实公司现货库存 本公司只做原装 可
SAMSUNG(三星)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持

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