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型号	功能描述	生产厂家企业	LOGO
K4S64323LH	512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA GENERAL DESCRIPTION The K4S64323LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions a	SAMSUNG 三星	SAMSUNG
K4S64323LH	512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA	SAMSUNG 三星	SAMSUNG
K4S64323LH-FC1H	512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA GENERAL DESCRIPTION The K4S64323LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions a	SAMSUNG 三星	SAMSUNG
K4S64323LH-FC1L	512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA GENERAL DESCRIPTION The K4S64323LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions a	SAMSUNG 三星	SAMSUNG
K4S64323LH-FC60	512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA GENERAL DESCRIPTION The K4S64323LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions a	SAMSUNG 三星	SAMSUNG
K4S64323LH-FC75	512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA GENERAL DESCRIPTION The K4S64323LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions a	SAMSUNG 三星	SAMSUNG
K4S64323LH-FE1H	512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA GENERAL DESCRIPTION The K4S64323LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions a	SAMSUNG 三星	SAMSUNG
K4S64323LH-FE1L	512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA GENERAL DESCRIPTION The K4S64323LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions a	SAMSUNG 三星	SAMSUNG
K4S64323LH-FE60	512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA GENERAL DESCRIPTION The K4S64323LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions a	SAMSUNG 三星	SAMSUNG
K4S64323LH-FE75	512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA GENERAL DESCRIPTION The K4S64323LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions a	SAMSUNG 三星	SAMSUNG
K4S64323LH-FF1H	512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA GENERAL DESCRIPTION The K4S64323LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions a	SAMSUNG 三星	SAMSUNG
K4S64323LH-FF1L	512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA GENERAL DESCRIPTION The K4S64323LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions a	SAMSUNG 三星	SAMSUNG
K4S64323LH-FF60	512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA GENERAL DESCRIPTION The K4S64323LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions a	SAMSUNG 三星	SAMSUNG
K4S64323LH-FF75	512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA GENERAL DESCRIPTION The K4S64323LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions a	SAMSUNG 三星	SAMSUNG
K4S64323LH-FG1H	512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA GENERAL DESCRIPTION The K4S64323LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions a	SAMSUNG 三星	SAMSUNG
K4S64323LH-FG1L	512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA GENERAL DESCRIPTION The K4S64323LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions a	SAMSUNG 三星	SAMSUNG
K4S64323LH-FG60	512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA GENERAL DESCRIPTION The K4S64323LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions a	SAMSUNG 三星	SAMSUNG
K4S64323LH-FG75	512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA GENERAL DESCRIPTION The K4S64323LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions a	SAMSUNG 三星	SAMSUNG
K4S64323LH-FL1H	512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA GENERAL DESCRIPTION The K4S64323LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions a	SAMSUNG 三星	SAMSUNG
K4S64323LH-FL1L	512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA GENERAL DESCRIPTION The K4S64323LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions a	SAMSUNG 三星	SAMSUNG
K4S64323LH-FL60	512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA GENERAL DESCRIPTION The K4S64323LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions a	SAMSUNG 三星	SAMSUNG
K4S64323LH-FL75	512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA GENERAL DESCRIPTION The K4S64323LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions a	SAMSUNG 三星	SAMSUNG
K4S64323LH-FN1H	512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA GENERAL DESCRIPTION The K4S64323LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions a	SAMSUNG 三星	SAMSUNG
K4S64323LH-FN1L	512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA GENERAL DESCRIPTION The K4S64323LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions a	SAMSUNG 三星	SAMSUNG
K4S64323LH-FN60	512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA GENERAL DESCRIPTION The K4S64323LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions a	SAMSUNG 三星	SAMSUNG
K4S64323LH-FN75	512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA GENERAL DESCRIPTION The K4S64323LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions a	SAMSUNG 三星	SAMSUNG
K4S64323LH-HC1H	512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA GENERAL DESCRIPTION The K4S64323LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions a	SAMSUNG 三星	SAMSUNG
K4S64323LH-HC1L	512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA GENERAL DESCRIPTION The K4S64323LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions a	SAMSUNG 三星	SAMSUNG
K4S64323LH-HC60	512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA GENERAL DESCRIPTION The K4S64323LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions a	SAMSUNG 三星	SAMSUNG
K4S64323LH-HC75	512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA GENERAL DESCRIPTION The K4S64323LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions a	SAMSUNG 三星	SAMSUNG
K4S64323LH-HE1H	512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA GENERAL DESCRIPTION The K4S64323LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions a	SAMSUNG 三星	SAMSUNG
K4S64323LH-HE1L	512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA GENERAL DESCRIPTION The K4S64323LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions a	SAMSUNG 三星	SAMSUNG
K4S64323LH-HE60	512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA GENERAL DESCRIPTION The K4S64323LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions a	SAMSUNG 三星	SAMSUNG
K4S64323LH-HE75	512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA GENERAL DESCRIPTION The K4S64323LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions a	SAMSUNG 三星	SAMSUNG
K4S64323LH-HF1H	512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA GENERAL DESCRIPTION The K4S64323LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions a	SAMSUNG 三星	SAMSUNG
K4S64323LH-HF1L	512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA GENERAL DESCRIPTION The K4S64323LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions a	SAMSUNG 三星	SAMSUNG
K4S64323LH-HF60	512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA GENERAL DESCRIPTION The K4S64323LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions a	SAMSUNG 三星	SAMSUNG
K4S64323LH-HF75	512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA GENERAL DESCRIPTION The K4S64323LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions a	SAMSUNG 三星	SAMSUNG
K4S64323LH-HG1H	512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA GENERAL DESCRIPTION The K4S64323LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions a	SAMSUNG 三星	SAMSUNG
K4S64323LH-HG1L	512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA GENERAL DESCRIPTION The K4S64323LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions a	SAMSUNG 三星	SAMSUNG
K4S64323LH-HG60	512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA GENERAL DESCRIPTION The K4S64323LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions a	SAMSUNG 三星	SAMSUNG
K4S64323LH-HG75	512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA GENERAL DESCRIPTION The K4S64323LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions a	SAMSUNG 三星	SAMSUNG
K4S64323LH-HL1H	512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA GENERAL DESCRIPTION The K4S64323LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions a	SAMSUNG 三星	SAMSUNG
K4S64323LH-HL1L	512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA GENERAL DESCRIPTION The K4S64323LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions a	SAMSUNG 三星	SAMSUNG
K4S64323LH-HL60	512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA GENERAL DESCRIPTION The K4S64323LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions a	SAMSUNG 三星	SAMSUNG
K4S64323LH-HL75	512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA GENERAL DESCRIPTION The K4S64323LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions a	SAMSUNG 三星	SAMSUNG
K4S64323LH-HN1H	512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA GENERAL DESCRIPTION The K4S64323LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions a	SAMSUNG 三星	SAMSUNG
K4S64323LH-HN1L	512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA GENERAL DESCRIPTION The K4S64323LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions a	SAMSUNG 三星	SAMSUNG
K4S64323LH-HN60	512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA GENERAL DESCRIPTION The K4S64323LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions a	SAMSUNG 三星	SAMSUNG
K4S64323LH-HN75	512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA GENERAL DESCRIPTION The K4S64323LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions a	SAMSUNG 三星	SAMSUNG
K4S64323LF-S	2Mx32 Mobile SDRAM 90FBGA 文件：64.989 Kbytes Page：8 Pages	SAMSUNG 三星	SAMSUNG
K4S64323LF-SN	2Mx32 Mobile SDRAM 90FBGA 文件：64.94 Kbytes Page：8 Pages	SAMSUNG 三星	SAMSUNG

K4S64323LH产品属性

类型
描述
型号
K4S64323LH
制造商
SAMSUNG
制造商全称
Samsung semiconductor
功能描述
512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

K4S64323LH供应商更多...

更新时间：2026-1-30 10:21:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市欧立现代科技有限公司	K4S6A163LF	SEC	24+	BGA	6980	原装现货,可开13%税票	询价
深圳市鹏和科技有限公司	K4T1G044QC-ZCE6	SAMSUNG	24+	BGA	5000	全现原装公司现货	询价
深圳市胜彬电子有限公司	K4T1G044QA-ZLCC	SAMSUNG	22+	BGA	8000	原装正品支持实单	询价
京海半导体(深圳)有限公司	K4S64323LH-HN75	SAMSUNG/三星	25+	BGA	10000	原装现货假一罚十	询价
深圳市昊创电子有限公司	K4T16164QE-HCF8	SAMSUNG/三星	专业铁帽	BGA	10	原装铁帽专营,代理渠道量大可订货	询价
瀚佳科技(深圳)有限公司	K4S64323LH-HN75	SAMSUNG	24+	BGA	32650	一级代理/放心采购	询价
深圳市一线半导体有限公司	K4S653232H-TC60	SAMSUNG	24+	SOP	2875		询价
上海意淼电子科技有限公司	K4S6432F-TC60	SAM	23+	SSOP	6500	全新原装假一赔十	询价
深圳市科恒伟业电子有限公司	K4SJ56323PF-HG75	SAMSUNG/三星	2450+	QFP	8850	只做原装正品假一赔十为客户做到零风险!!	询价
深圳市华来深电子有限公司	K4T1G044QA-ZCCC	SAMSUNG	23+	FBGA	8560	受权代理!全新原装现货特价热卖!	询价

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K4S64323LH规格书下载地址

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2024-1-8
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K4S64323LH产品属性

K4S64323LH供应商更多...

K4S64323LH芯片相关品牌

K4S64323LH规格书下载地址

K4S64323LH参数引脚图相关

K4S64323LH数据表相关新闻

K4FBE3D4HB-KFC

K4F6E3S4HM-MGCJ

K4T1G164QG-BCE7 进口原装，主营军工级IC

K4T1G164QJ-BCE7

K4S641632H-TC30，K4S641632H-UC6，K4SA160822DTC1H，K616V1002CT-12

K4T1G084QJ-BCE7

DdatasheetPDF页码索引