64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)

GENERAL DESCRIPTION The K4S640432H / K4S640832H / K4S641632H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 4 bits, / 4 x 2,097,152 words by 8 bits, / 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchro

64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)

GENERAL DESCRIPTION The K4S640432H / K4S640832H / K4S641632H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 4 bits, / 4 x 2,097,152 words by 8 bits, / 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchro

64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)

GENERAL DESCRIPTION The K4S640432H / K4S640832H / K4S641632H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 4 bits, / 4 x 2,097,152 words by 8 bits, / 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchro

64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)

GENERAL DESCRIPTION The K4S640432H / K4S640832H / K4S641632H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 4 bits, / 4 x 2,097,152 words by 8 bits, / 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchro

1M x 16Bit x 4 Banks Synchronous DRAM

文件：1.16904 Mbytes Page：42 Pages

64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL

文件：115.07 Kbytes Page：11 Pages

64Mbit SDRAM

文件：129.229 Kbytes Page：10 Pages

64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL

文件：133.71 Kbytes Page：11 Pages