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K4S641632价格
参考价格：￥0.0000
型号：K4S641632H-TC1H000 品牌：Samsung Semi 备注：这里有K4S641632多少钱，2025年最近7天走势，今日出价，今日竞价，K4S641632批发/采购报价，K4S641632行情走势销售排行榜，K4S641632报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) GENERAL DESCRIPTION The K4S640432H / K4S640832H / K4S641632H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 4 bits, / 4 x 2,097,152 words by 8 bits, / 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchro | Samsung 三星 |   | ||
64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free GENERAL DESCRIPTION The K4S640432H / K4S640832H / K4S641632H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 4 bits, / 4 x 2,097,152 words by 8 bits, / 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchro | Samsung 三星 | | ||
64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free GENERAL DESCRIPTION The K4S640432H / K4S640832H / K4S641632H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 4 bits, / 4 x 2,097,152 words by 8 bits, / 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchro | Samsung 三星 | | ||
64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free GENERAL DESCRIPTION The K4S640432H / K4S640832H / K4S641632H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 4 bits, / 4 x 2,097,152 words by 8 bits, / 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchro | Samsung 三星 | | ||
64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free GENERAL DESCRIPTION The K4S640432H / K4S640832H / K4S641632H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 4 bits, / 4 x 2,097,152 words by 8 bits, / 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchro | Samsung 三星 | | ||
64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free GENERAL DESCRIPTION The K4S640432H / K4S640832H / K4S641632H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 4 bits, / 4 x 2,097,152 words by 8 bits, / 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchro | Samsung 三星 | | ||
64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free GENERAL DESCRIPTION The K4S640432H / K4S640832H / K4S641632H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 4 bits, / 4 x 2,097,152 words by 8 bits, / 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchro | Samsung 三星 | | ||
64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) GENERAL DESCRIPTION The K4S640432H / K4S640832H / K4S641632H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 4 bits, / 4 x 2,097,152 words by 8 bits, / 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchro | Samsung 三星 | | ||
64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) GENERAL DESCRIPTION The K4S640432H / K4S640832H / K4S641632H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 4 bits, / 4 x 2,097,152 words by 8 bits, / 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchro | Samsung 三星 | | ||
64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) GENERAL DESCRIPTION The K4S640432H / K4S640832H / K4S641632H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 4 bits, / 4 x 2,097,152 words by 8 bits, / 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchro | Samsung 三星 | | ||
64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) GENERAL DESCRIPTION The K4S640432H / K4S640832H / K4S641632H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 4 bits, / 4 x 2,097,152 words by 8 bits, / 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchro | Samsung 三星 | | ||
64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) GENERAL DESCRIPTION The K4S640432H / K4S640832H / K4S641632H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 4 bits, / 4 x 2,097,152 words by 8 bits, / 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchro | Samsung 三星 | | ||
64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) GENERAL DESCRIPTION The K4S640432H / K4S640832H / K4S641632H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 4 bits, / 4 x 2,097,152 words by 8 bits, / 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchro | Samsung 三星 | | ||
64Mb K-die SDRAM GENERAL DESCRIPTION The K4S640832K / K4S641632K is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 8 bits, / 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with | Samsung 三星 | | ||
64Mb K-die SDRAM GENERAL DESCRIPTION The K4S640832K / K4S641632K is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 8 bits, / 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with | Samsung 三星 | | ||
64Mb K-die SDRAM GENERAL DESCRIPTION The K4S640832K / K4S641632K is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 8 bits, / 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with | Samsung 三星 | | ||
64Mb K-die SDRAM GENERAL DESCRIPTION The K4S640832K / K4S641632K is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 8 bits, / 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with | Samsung 三星 | | ||
64Mb K-die SDRAM GENERAL DESCRIPTION The K4S640832K / K4S641632K is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 8 bits, / 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with | Samsung 三星 | | ||
64Mb K-die SDRAM GENERAL DESCRIPTION The K4S640832K / K4S641632K is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 8 bits, / 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with | Samsung 三星 | | ||
64Mb K-die SDRAM GENERAL DESCRIPTION The K4S640832K / K4S641632K is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 8 bits, / 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with | Samsung 三星 | | ||
Consumer Memory SDRAM Product Guide Memory Division November 2007 | Samsung 三星 | | ||
1M x 16Bit x 4 Banks Synchronous DRAM 文件：1.16904 Mbytes Page：42 Pages | Samsung 三星 | | ||
1M x 16Bit x 4 Banks Synchronous DRAM 文件：1.16904 Mbytes Page：42 Pages | Samsung 三星 | | ||
1M x 16Bit x 4 Banks Synchronous DRAM 文件：1.16904 Mbytes Page：42 Pages | Samsung 三星 | | ||
1M x 16Bit x 4 Banks Synchronous DRAM 文件：1.16904 Mbytes Page：42 Pages | Samsung 三星 | | ||
1M x 16Bit x 4 Banks Synchronous DRAM 文件：1.16904 Mbytes Page：42 Pages | Samsung 三星 | | ||
1M x 16Bit x 4 Banks Synchronous DRAM 文件：1.16904 Mbytes Page：42 Pages | Samsung 三星 | | ||
1M x 16Bit x 4 Banks Synchronous DRAM 文件：1.16904 Mbytes Page：42 Pages | Samsung 三星 | | ||
1M x 16Bit x 4 Banks Synchronous DRAM 文件：1.16904 Mbytes Page：42 Pages | Samsung 三星 | | ||
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 66MHz | Samsung 三星 | | ||
1M x 16Bit x 4 Banks Synchronous DRAM 文件：1.16904 Mbytes Page：42 Pages | Samsung 三星 | | ||
1M x 16Bit x 4 Banks Synchronous DRAM 文件：1.16904 Mbytes Page：42 Pages | Samsung 三星 | | ||
1M x 16Bit x 4 Banks Synchronous DRAM 文件：1.16904 Mbytes Page：42 Pages | Samsung 三星 | | ||
1M x 16Bit x 4 Banks Synchronous DRAM 文件：1.16904 Mbytes Page：42 Pages | Samsung 三星 | | ||
1M x 16Bit x 4 Banks Synchronous DRAM 文件：1.16904 Mbytes Page：42 Pages | Samsung 三星 | | ||
1M x 16Bit x 4 Banks Synchronous DRAM 文件：1.16904 Mbytes Page：42 Pages | Samsung 三星 | | ||
1M x 16Bit x 4 Banks Synchronous DRAM 文件：1.16904 Mbytes Page：42 Pages | Samsung 三星 | | ||
64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL 文件：115.07 Kbytes Page：11 Pages | Samsung 三星 | | ||
1M x 16Bit x 4 Banks Synchronous DRAM LVTTL | Samsung 三星 | | ||
64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL 文件：115.07 Kbytes Page：11 Pages | Samsung 三星 | | ||
64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL 文件：115.07 Kbytes Page：11 Pages | Samsung 三星 | | ||
64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL 文件：115.07 Kbytes Page：11 Pages | Samsung 三星 | | ||
64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL 文件：115.07 Kbytes Page：11 Pages | Samsung 三星 | | ||
64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL 文件：115.07 Kbytes Page：11 Pages | Samsung 三星 | | ||
64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL 文件：115.07 Kbytes Page：11 Pages | Samsung 三星 | | ||
64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL 文件：115.07 Kbytes Page：11 Pages | Samsung 三星 | | ||
64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL 文件：115.07 Kbytes Page：11 Pages | Samsung 三星 | | ||
64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL 文件：115.07 Kbytes Page：11 Pages | Samsung 三星 | | ||
64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL 文件：115.07 Kbytes Page：11 Pages | Samsung 三星 | | ||
64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL 文件：115.07 Kbytes Page：11 Pages | Samsung 三星 | | ||
64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL 文件：115.07 Kbytes Page：11 Pages | Samsung 三星 | | ||
64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL 文件：115.07 Kbytes Page：11 Pages | Samsung 三星 | | ||
64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL 文件：115.07 Kbytes Page：11 Pages | Samsung 三星 | | ||
64Mbit SDRAM 文件：129.229 Kbytes Page：10 Pages | Samsung 三星 | | ||
64Mbit SDRAM | Samsung 三星 | | ||
64Mbit SDRAM 文件：129.229 Kbytes Page：10 Pages | Samsung 三星 | | ||
64Mbit SDRAM 文件：129.229 Kbytes Page：10 Pages | Samsung 三星 | | ||
64Mbit SDRAM 文件：129.229 Kbytes Page：10 Pages | Samsung 三星 | | ||
64Mbit SDRAM 文件：129.229 Kbytes Page：10 Pages | Samsung 三星 | | ||
64Mbit SDRAM 文件：129.229 Kbytes Page：10 Pages | Samsung 三星 | |
K4S641632产品属性
- 类型
描述
- 型号
K4S641632
- 制造商
SAMSUNG
- 制造商全称
Samsung semiconductor
- 功能描述
1M x 16Bit x 4 Banks Synchronous DRAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAMSUNG |
25+ |
1 |
全新原装!优势库存热卖中! |
||||
SAMSUNG |
TSOP |
800 |
正品原装--自家现货-实单可谈 |
||||
HYNIX |
25+ |
MP16 |
18000 |
原厂直接发货进口原装 |
|||
SAMSUNG/三星 |
2021+ |
TSOP54 |
9450 |
原装现货。 |
|||
HYNIX |
22+ |
SOP |
5000 |
全新原装现货!自家库存! |
|||
HYNIX |
17+ |
SOP |
6200 |
100%原装正品现货 |
|||
SAMSUNG |
24+ |
TSOP |
6980 |
原装现货,可开13%税票 |
|||
SAMSUNG/三星 |
25+ |
TSOP54 |
12500 |
全新原装现货,假一赔十 |
|||
SAMSUNG |
24+ |
TSOP54 |
2200 |
只做原装 |
|||
SAM |
06+ |
TSOP |
1000 |
自己公司全新库存绝对有货 |
K4S641632规格书下载地址
K4S641632参数引脚图相关
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- K4-VAT2
- K4T51163QQ-BCE6T00
- K4T51163QQ-BCE6000
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- K4T51083QQ-BCE6000
- K4T51083QC-ZCD5000
- K4T51043QB-ZCD5
- K4T-48V-9
- K4T-24V-9
- K4T1G164QG-BIE6000
- K4T1G164QG-BCF7000
- K4T1G164QG-BCE7T00
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- K4T1G164QG-BCE6000
- K4T1G084QG-BCF7T00
- K4T1G084QG-BCE7000
- K4T1G084QG-BCE6000
- K4T1G084QA-ZCD5000
- K4SGW63
- K4S643233HFN75000$SCR
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- K4S640832H-UC75
- K4S560432D-TC75
- K4S560432C-TC75
- K4S560432B-TC1H
- K4S51323PF-MF75000
- K4S510432D-UC75000
- K4S28232LF-HN750JR
- K4S281632ETC75000$FAB
- K4S280432A-TL1L0
- K4-PS
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- K4N25A
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- K4MTG
- K4MDW62
- K4H511638B-TCCC000
- K4H280438E-TCB0
- K4FS
- K4ET-48V-9
- K4E640412D-TL50
- K4E640412D-TC50
- K4E640412C-TL60
- K4E-24V-9
- K4E170412C-FC60
K4S641632数据表相关新闻
K4E6E304EB-EGCF
K4E6E304EB-EGCF
2025-1-13K4FBE3D4HB-KFC
K4FBE3D4HB-KFC
2024-1-8K4F6E3S4HM-MGCJ
K4F6E3S4HM-MGCJ
2022-4-16K4T1G164QG-BCE7 进口原装，主营军工级IC
K4T1G164QG-BCE7 SAMSUNG，ALTERA（阿尔特拉）， ADI亚德诺，军工级IC专业优势渠道
2020-7-14K4S641632H-TC30，K4S641632H-UC6，K4SA160822DTC1H，K616V1002CT-12
K4S641632H-TC30，K4S641632H-UC6，K4SA160822DTC1H，K616V1002CT-12
2020-2-24K4T1G084QJ-BCE7
K4T1G084QJ-BCE7
2019-10-28
DdatasheetPDF页码索引
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