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K4S641632价格
参考价格：￥0.0000
型号：K4S641632H-TC1H000 品牌：Samsung Semi 备注：这里有K4S641632多少钱，2024年最近7天走势，今日出价，今日竞价，K4S641632批发/采购报价，K4S641632行情走势销售排行榜，K4S641632报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
64MbH-dieSDRAMSpecification54TSOP-IIwithPb-Free(RoHScompliant) GENERALDESCRIPTION TheK4S640432H/K4S640832H/K4S641632His67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x4,194,304wordsby4bits,/4x2,097,152wordsby8bits,/4x1,048,576wordsby16bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.Synchro | SamsungSamsung Group 三星三星半导体 |  |   | |
64MbH-dieSDRAMSpecification54TSOP-IIwithPb-Free GENERALDESCRIPTION TheK4S640432H/K4S640832H/K4S641632His67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x4,194,304wordsby4bits,/4x2,097,152wordsby8bits,/4x1,048,576wordsby16bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.Synchro | SamsungSamsung Group 三星三星半导体 | | | |
64MbH-dieSDRAMSpecification54TSOP-IIwithPb-Free GENERALDESCRIPTION TheK4S640432H/K4S640832H/K4S641632His67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x4,194,304wordsby4bits,/4x2,097,152wordsby8bits,/4x1,048,576wordsby16bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.Synchro | SamsungSamsung Group 三星三星半导体 | | | |
64MbH-dieSDRAMSpecification54TSOP-IIwithPb-Free GENERALDESCRIPTION TheK4S640432H/K4S640832H/K4S641632His67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x4,194,304wordsby4bits,/4x2,097,152wordsby8bits,/4x1,048,576wordsby16bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.Synchro | SamsungSamsung Group 三星三星半导体 | | | |
64MbH-dieSDRAMSpecification54TSOP-IIwithPb-Free GENERALDESCRIPTION TheK4S640432H/K4S640832H/K4S641632His67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x4,194,304wordsby4bits,/4x2,097,152wordsby8bits,/4x1,048,576wordsby16bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.Synchro | SamsungSamsung Group 三星三星半导体 | | | |
64MbH-dieSDRAMSpecification54TSOP-IIwithPb-Free GENERALDESCRIPTION TheK4S640432H/K4S640832H/K4S641632His67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x4,194,304wordsby4bits,/4x2,097,152wordsby8bits,/4x1,048,576wordsby16bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.Synchro | SamsungSamsung Group 三星三星半导体 | | | |
64MbH-dieSDRAMSpecification54TSOP-IIwithPb-Free GENERALDESCRIPTION TheK4S640432H/K4S640832H/K4S641632His67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x4,194,304wordsby4bits,/4x2,097,152wordsby8bits,/4x1,048,576wordsby16bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.Synchro | SamsungSamsung Group 三星三星半导体 | | | |
64MbH-dieSDRAMSpecification54TSOP-IIwithPb-Free(RoHScompliant) GENERALDESCRIPTION TheK4S640432H/K4S640832H/K4S641632His67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x4,194,304wordsby4bits,/4x2,097,152wordsby8bits,/4x1,048,576wordsby16bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.Synchro | SamsungSamsung Group 三星三星半导体 | | | |
64MbH-dieSDRAMSpecification54TSOP-IIwithPb-Free(RoHScompliant) GENERALDESCRIPTION TheK4S640432H/K4S640832H/K4S641632His67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x4,194,304wordsby4bits,/4x2,097,152wordsby8bits,/4x1,048,576wordsby16bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.Synchro | SamsungSamsung Group 三星三星半导体 | | | |
64MbH-dieSDRAMSpecification54TSOP-IIwithPb-Free(RoHScompliant) GENERALDESCRIPTION TheK4S640432H/K4S640832H/K4S641632His67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x4,194,304wordsby4bits,/4x2,097,152wordsby8bits,/4x1,048,576wordsby16bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.Synchro | SamsungSamsung Group 三星三星半导体 | | | |
64MbH-dieSDRAMSpecification54TSOP-IIwithPb-Free(RoHScompliant) GENERALDESCRIPTION TheK4S640432H/K4S640832H/K4S641632His67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x4,194,304wordsby4bits,/4x2,097,152wordsby8bits,/4x1,048,576wordsby16bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.Synchro | SamsungSamsung Group 三星三星半导体 | | | |
64MbH-dieSDRAMSpecification54TSOP-IIwithPb-Free(RoHScompliant) GENERALDESCRIPTION TheK4S640432H/K4S640832H/K4S641632His67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x4,194,304wordsby4bits,/4x2,097,152wordsby8bits,/4x1,048,576wordsby16bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.Synchro | SamsungSamsung Group 三星三星半导体 | | | |
64MbH-dieSDRAMSpecification54TSOP-IIwithPb-Free(RoHScompliant) GENERALDESCRIPTION TheK4S640432H/K4S640832H/K4S641632His67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x4,194,304wordsby4bits,/4x2,097,152wordsby8bits,/4x1,048,576wordsby16bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.Synchro | SamsungSamsung Group 三星三星半导体 | | | |
64MbK-dieSDRAM GENERALDESCRIPTION TheK4S640832K/K4S641632Kis67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x2,097,152wordsby8bits,/4x1,048,576wordsby16bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwith | SamsungSamsung Group 三星三星半导体 | | | |
64MbK-dieSDRAM GENERALDESCRIPTION TheK4S640832K/K4S641632Kis67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x2,097,152wordsby8bits,/4x1,048,576wordsby16bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwith | SamsungSamsung Group 三星三星半导体 | | | |
64MbK-dieSDRAM GENERALDESCRIPTION TheK4S640832K/K4S641632Kis67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x2,097,152wordsby8bits,/4x1,048,576wordsby16bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwith | SamsungSamsung Group 三星三星半导体 | | | |
64MbK-dieSDRAM GENERALDESCRIPTION TheK4S640832K/K4S641632Kis67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x2,097,152wordsby8bits,/4x1,048,576wordsby16bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwith | SamsungSamsung Group 三星三星半导体 | | | |
ConsumerMemory SDRAMProductGuide MemoryDivision November2007 | SamsungSamsung Group 三星三星半导体 | | | |
1Mx16Bitx4BanksSynchronousDRAM 文件：1.16904 Mbytes Page：42 Pages | SamsungSamsung Group 三星三星半导体 | | | |
1Mx16Bitx4BanksSynchronousDRAM 文件：1.16904 Mbytes Page：42 Pages | SamsungSamsung Group 三星三星半导体 | | | |
1Mx16Bitx4BanksSynchronousDRAM 文件：1.16904 Mbytes Page：42 Pages | SamsungSamsung Group 三星三星半导体 | | | |
1Mx16Bitx4BanksSynchronousDRAM 文件：1.16904 Mbytes Page：42 Pages | SamsungSamsung Group 三星三星半导体 | | | |
1Mx16Bitx4BanksSynchronousDRAM 文件：1.16904 Mbytes Page：42 Pages | SamsungSamsung Group 三星三星半导体 | | | |
1Mx16Bitx4BanksSynchronousDRAM 文件：1.16904 Mbytes Page：42 Pages | SamsungSamsung Group 三星三星半导体 | | | |
1Mx16Bitx4BanksSynchronousDRAM 文件：1.16904 Mbytes Page：42 Pages | SamsungSamsung Group 三星三星半导体 | | | |
1Mx16Bitx4BanksSynchronousDRAM 文件：1.16904 Mbytes Page：42 Pages | SamsungSamsung Group 三星三星半导体 | | | |
64MbitSDRAM1Mx16Bitx4BanksSynchronousDRAMLVTTL 文件：115.07 Kbytes Page：11 Pages | SamsungSamsung Group 三星三星半导体 | | | |
64MbitSDRAM1Mx16Bitx4BanksSynchronousDRAMLVTTL 文件：115.07 Kbytes Page：11 Pages | SamsungSamsung Group 三星三星半导体 | | | |
64MbitSDRAM1Mx16Bitx4BanksSynchronousDRAMLVTTL 文件：115.07 Kbytes Page：11 Pages | SamsungSamsung Group 三星三星半导体 | | | |
64MbitSDRAM1Mx16Bitx4BanksSynchronousDRAMLVTTL 文件：115.07 Kbytes Page：11 Pages | SamsungSamsung Group 三星三星半导体 | | | |
64MbitSDRAM1Mx16Bitx4BanksSynchronousDRAMLVTTL 文件：115.07 Kbytes Page：11 Pages | SamsungSamsung Group 三星三星半导体 | | | |
64MbitSDRAM1Mx16Bitx4BanksSynchronousDRAMLVTTL 文件：115.07 Kbytes Page：11 Pages | SamsungSamsung Group 三星三星半导体 | | | |
64MbitSDRAM1Mx16Bitx4BanksSynchronousDRAMLVTTL 文件：115.07 Kbytes Page：11 Pages | SamsungSamsung Group 三星三星半导体 | | | |
64MbitSDRAM1Mx16Bitx4BanksSynchronousDRAMLVTTL 文件：115.07 Kbytes Page：11 Pages | SamsungSamsung Group 三星三星半导体 | | | |
64MbitSDRAM 文件：129.229 Kbytes Page：10 Pages | SamsungSamsung Group 三星三星半导体 | | | |
64MbitSDRAM 文件：129.229 Kbytes Page：10 Pages | SamsungSamsung Group 三星三星半导体 | | | |
64MbitSDRAM 文件：129.229 Kbytes Page：10 Pages | SamsungSamsung Group 三星三星半导体 | | | |
64MbitSDRAM 文件：129.229 Kbytes Page：10 Pages | SamsungSamsung Group 三星三星半导体 | | | |
64MbitSDRAM 文件：129.229 Kbytes Page：10 Pages | SamsungSamsung Group 三星三星半导体 | | | |
64MbitSDRAM 文件：129.229 Kbytes Page：10 Pages | SamsungSamsung Group 三星三星半导体 | | | |
64MbitSDRAM 文件：129.229 Kbytes Page：10 Pages | SamsungSamsung Group 三星三星半导体 | | | |
64MbitSDRAM 文件：129.229 Kbytes Page：10 Pages | SamsungSamsung Group 三星三星半导体 | | | |
64MbitSDRAM 文件：129.229 Kbytes Page：10 Pages | SamsungSamsung Group 三星三星半导体 | | | |
64MbitSDRAM 文件：129.229 Kbytes Page：10 Pages | SamsungSamsung Group 三星三星半导体 | | | |
64MbitSDRAM 文件：129.229 Kbytes Page：10 Pages | SamsungSamsung Group 三星三星半导体 | | | |
64MbitSDRAM 文件：129.229 Kbytes Page：10 Pages | SamsungSamsung Group 三星三星半导体 | | | |
64MbitSDRAM 文件：129.229 Kbytes Page：10 Pages | SamsungSamsung Group 三星三星半导体 | | | |
64MbitSDRAM 文件：129.229 Kbytes Page：10 Pages | SamsungSamsung Group 三星三星半导体 | | | |
64MbitSDRAM 文件：129.229 Kbytes Page：10 Pages | SamsungSamsung Group 三星三星半导体 | | | |
64MbitSDRAM1Mx16Bitx4BanksSynchronousDRAMLVTTL 文件：133.71 Kbytes Page：11 Pages | SamsungSamsung Group 三星三星半导体 | | | |
64MbitSDRAM1Mx16Bitx4BanksSynchronousDRAMLVTTL 文件：133.71 Kbytes Page：11 Pages | SamsungSamsung Group 三星三星半导体 | | | |
64MbitSDRAM1Mx16Bitx4BanksSynchronousDRAMLVTTL 文件：133.71 Kbytes Page：11 Pages | SamsungSamsung Group 三星三星半导体 | | | |
64MbitSDRAM1Mx16Bitx4BanksSynchronousDRAMLVTTL 文件：133.71 Kbytes Page：11 Pages | SamsungSamsung Group 三星三星半导体 | | | |
64MbitSDRAM1Mx16Bitx4BanksSynchronousDRAMLVTTL 文件：133.71 Kbytes Page：11 Pages | SamsungSamsung Group 三星三星半导体 | | | |
64MbitSDRAM1Mx16Bitx4BanksSynchronousDRAMLVTTL 文件：133.71 Kbytes Page：11 Pages | SamsungSamsung Group 三星三星半导体 | | | |
64MbitSDRAM1Mx16Bitx4BanksSynchronousDRAMLVTTL 文件：133.71 Kbytes Page：11 Pages | SamsungSamsung Group 三星三星半导体 | | | |
64MbitSDRAM1Mx16Bitx4BanksSynchronousDRAMLVTTL 文件：133.71 Kbytes Page：11 Pages | SamsungSamsung Group 三星三星半导体 | | | |
64MbitSDRAM1Mx16Bitx4BanksSynchronousDRAMLVTTL 文件：133.71 Kbytes Page：11 Pages | SamsungSamsung Group 三星三星半导体 | | | |
64MbitSDRAM1Mx16Bitx4BanksSynchronousDRAMLVTTL 文件：133.71 Kbytes Page：11 Pages | SamsungSamsung Group 三星三星半导体 | | | |
64MbitSDRAM1Mx16Bitx4BanksSynchronousDRAMLVTTL 文件：133.71 Kbytes Page：11 Pages | SamsungSamsung Group 三星三星半导体 | | |
K4S641632产品属性
- 类型
描述
- 型号
K4S641632
- 制造商
SAMSUNG
- 制造商全称
Samsung semiconductor
- 功能描述
1M x 16Bit x 4 Banks Synchronous DRAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAMSUNG |
2023+ |
TSOP54 |
700000 |
柒号芯城跟原厂的距离只有0.07公分 |
|||
SAMSUNG/三星 |
22+ |
TSOP54 |
360000 |
原装现货销售 |
|||
SAMSANG |
19+ |
TSOP54 |
256800 |
原厂代理渠道,每一颗芯片都可追溯原厂； |
|||
SAMSUNG |
2020+ |
TSOP54 |
15000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
SAMSUNG/三星 |
22+ |
TSSOP54 |
6000 |
进口原装 假一罚十 现货 |
|||
SAMSUNG/三星 |
21+ |
TSOP54 |
15000 |
全新原装现货,假一赔十 |
|||
SAMSUNG/三星 |
23+ |
TSOP54 |
6000 |
原装正品，支持实单 |
|||
SAMSUNG |
2023+ |
TSOP |
3615 |
全新原厂原装产品、公司现货销售 |
|||
SAMSUNG/三星 |
TSOP54 |
265209 |
假一罚十原包原标签常备现货! |
||||
SAMSUNG(三星) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
K4S641632芯片相关品牌
K4S641632规格书下载地址
K4S641632参数引脚图相关
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- l478
- l3g4200d
- l393
- l32
- l298n
- l298
- l297
- l295
- l293d
- l234
- l101
- l100
- ku波段
- kt250
- kse13005
- ks20
- km710
- ka5q1265rf
- k9f1208
- K500BAC
- K500106
- K500105
- K500103
- K5000
- K500_08
- K500_07
- K50_V11
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- K50_V06
- K50_V05
- K50_V04
- K50_V03
- K50_V02
- K50_V01
- K4-VAT2
- K4T51163QQ-BCE6T00
- K4T51163QQ-BCE6000
- K4T51083QQ-BCE7000
- K4T51083QQ-BCE6000
- K4T51083QC-ZCD5000
- K4T51043QB-ZCD5
- K4T-48V-9
- K4T-24V-9
- K4T1G164QG-BIE6000
- K4T1G164QG-BCF7000
- K4T1G164QG-BCE7T00
- K4T1G164QG-BCE7000
- K4T1G164QG-BCE6000
- K4T1G084QG-BCF7T00
- K4T1G084QG-BCE7000
- K4T1G084QG-BCE6000
- K4T1G084QA-ZCD5000
- K4SGW63
- K4S643233HFN75000$SCR
- K4S641632H-UC60
- K4S641632H-TC1H000
- K4S640832H-UC75
- K4S560432D-TC75
- K4S560432C-TC75
- K4S560432B-TC1H
- K4S51323PF-MF75000
- K4S510432D-UC75000
- K4S28232LF-HN750JR
- K4S281632ETC75000$FAB
- K4S280432A-TL1L0
- K4-PS
- K4PE68A
- K4N38A
- K4N38
- K4N37
- K4N36
- K4N35
- K4N33
- K4N32
- K4N31
- K4N30
- K4N29A
- K4N29
- K4N28
- K4N27
- K4N26
- K4N25H
- K4N25G
- K4N25A
- K4N25
- K4MTG
- K4MDW62
- K4H511638B-TCCC000
- K4H280438E-TCB0
- K4FS
- K4ET-48V-9
- K4E640412D-TL50
- K4E640412D-TC50
- K4E640412C-TL60
- K4E-24V-9
- K4E170412C-FC60
K4S641632数据表相关新闻
K4FBE3D4HB-KFC
K4FBE3D4HB-KFC
2024-1-8K4F6E3S4HM-MGCJ
K4F6E3S4HM-MGCJ
2022-4-16K4E6E304EB-EGCF 原装现货 特价销售
只做原装正品，原包装标签欢迎咨询！
2021-8-23K4T1G164QG-BCE7 进口原装，主营军工级IC
K4T1G164QG-BCE7SAMSUNG，ALTERA（阿尔特拉），ADI亚德诺，军工级IC专业优势渠道
2020-7-14K4S641632H-TC30，K4S641632H-UC6，K4SA160822DTC1H，K616V1002CT-12
K4S641632H-TC30，K4S641632H-UC6，K4SA160822DTC1H，K616V1002CT-12
2020-2-24K4T1G084QJ-BCE7
K4T1G084QJ-BCE7
2019-10-28
DdatasheetPDF页码索引
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