4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

GENERAL DESCRIPTION The K4S56163PF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions

4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

GENERAL DESCRIPTION The K4S56163PF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions

4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

GENERAL DESCRIPTION The K4S56163PF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions

4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

GENERAL DESCRIPTION The K4S56163PF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions

4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

GENERAL DESCRIPTION The K4S56163PF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions

4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

GENERAL DESCRIPTION The K4S56163PF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions

4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

GENERAL DESCRIPTION The K4S56163PF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions

4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

GENERAL DESCRIPTION The K4S56163PF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions

4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

GENERAL DESCRIPTION The K4S56163PF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions

4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

GENERAL DESCRIPTION The K4S56163PF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions

16Mx16 Mobile SDRAM 54CSP

文件：60.47 Kbytes Page：8 Pages

16Mx16 Mobile SDRAM 54CSP

文件：60.47 Kbytes Page：8 Pages

4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC

文件：114.55 Kbytes Page：12 Pages

4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC

文件：114.55 Kbytes Page：12 Pages

4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC

文件：114.55 Kbytes Page：12 Pages