4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC

GENERAL DESCRIPTION The K4S561633F is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions a

4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC

GENERAL DESCRIPTION The K4S561633F is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions a

4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC

GENERAL DESCRIPTION The K4S561633F is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions a

4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC

GENERAL DESCRIPTION The K4S561633F is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions a

4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC

GENERAL DESCRIPTION The K4S561633F is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions a

4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC

GENERAL DESCRIPTION The K4S561633F is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions a

4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC

GENERAL DESCRIPTION The K4S561633F is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions a

4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC

GENERAL DESCRIPTION The K4S561633F is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions a

4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC

GENERAL DESCRIPTION The K4S561633F is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions a

4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC

GENERAL DESCRIPTION The K4S561633F is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions a

4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC

GENERAL DESCRIPTION The K4S561633F is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions a

4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC

16Mx16 SDRAM 54CSP

文件：59.52 Kbytes Page：8 Pages

16Mx16 SDRAM 54CSP

文件：59.52 Kbytes Page：8 Pages