16M x 4Bit x 4 Banks / 8M x 8Bit x 4 Banks / 4M x 16Bit x 4 Banks SDRAM

256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)

文件：198.76 Kbytes Page：14 Pages

256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)

文件：198.76 Kbytes Page：14 Pages

256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S561632A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p

256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL

The K4S561632B is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clo

256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S561632D is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p

256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM

文件：116.95 Kbytes Page：11 Pages

256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM

文件：116.95 Kbytes Page：11 Pages