256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)

文件：198.76 Kbytes Page：14 Pages

256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)

256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)

文件：198.76 Kbytes Page：14 Pages

256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S560432A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,785,216 words by 4 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p

256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL

GENERAL DESCRIPTION The K4S560432B is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,785,216 words by 4 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are p

256Mb E-die SDRAM Specification 54pin sTSOP-II

GENERAL DESCRIPTION The K4S560432E / K4S560832E is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 4bits / 4 x 8,388,608 words by 8bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the

256Mb E-die SDRAM Specification

GENERAL DESCRIPTION The K4S560432E / K4S560832E / K4S561632E is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 4 bits / 4 x 8,388,608 words by 8bits / 4 x 4,194,304 words by 16bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronou

16M x 4bit x 4 Banks Synchronous DRAM LVTTL

文件：121.66 Kbytes Page：11 Pages