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型号 功能描述 生产厂家 企业 LOGO 操作
K4N26

Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting)

Photocoupler These Photocouplers consist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Phototransistor in a 6-pin package. FEATURES • Switching Time - Typ. 3㎲ • Collector-Emitter Voltage : Min.30V • Current Transfer Ratio : Typ.100 (at IF=10mA, VCE=10V) • Electrical Isolati

KODENSHI

可天士

K4N26

Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting)

KODENSHI

可天士

128Mbit GDDR2 SDRAM

GENERAL DESCRIPTION FOR 1M x 32Bit x 4 Bank GDDR2 SDRAM The 4Mx32 GDDR2 is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 1,048,976 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous features with Data Strobe allow extremely hi

SAMSUNG

三星

128Mbit GDDR2 SDRAM

GENERAL DESCRIPTION FOR 1M x 32Bit x 4 Bank GDDR2 SDRAM The 4Mx32 GDDR2 is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 1,048,976 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous features with Data Strobe allow extremely hi

SAMSUNG

三星

128Mbit GDDR2 SDRAM

GENERAL DESCRIPTION FOR 1M x 32Bit x 4 Bank GDDR2 SDRAM The 4Mx32 GDDR2 is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 1,048,976 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous features with Data Strobe allow extremely hi

SAMSUNG

三星

128Mbit GDDR2 SDRAM

GENERAL DESCRIPTION FOR 1M x 32Bit x 4 Bank GDDR2 SDRAM The 4Mx32 GDDR2 is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 1,048,976 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous features with Data Strobe allow extremely hi

SAMSUNG

三星

128Mbit GDDR2 SDRAM

SAMSUNG

三星

6-Pin DIP Optoisolators Transistor Output

The4N25/A, 4N26, 4N27 and 4N28 devices consist of a gallium arsenide infraredemitting diode optically coupled to amonolithic silicon phototransistor detector. • Most Economical Optoisolator Choice for Medium Speed, Switching Applications • Meets or Exceeds All JEDEC Registered Specific

MOTOROLA

摩托罗拉

PHOTO TRANSISTOR (AC LINE/DIGITAL LOGIC ISOLATOR)

AC LINE / DIGITAL LOGIC ISOLATOR. DIGITAL LOGIC / DIGITAL LOGIC ISOLATOR. TELEPHONE LINE RECEIVER. TWISTED PAIR LINE RECEIVER. HIGH FREQUENCY POWER SUPPLY FEEDBACK CONTROL. RELAY CONTACT MONITOR.

TOSHIBA

东芝

GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS

DESCRIPTION The general purpose optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line package. FEATURES • Also available in white package by specifying -M suffix, eg. 4N25-M • UL recognized (File # E90700) • VD

FAIRCHILD

仙童半导体

6-Pin DIP Optoisolators Transistor Output

The M4N26 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • Most Economical Optoisolator Choice for Medium Speed, Switching Applications • Meets or Exceeds All JEDEC Registered Specifications Applications • Gener

MOTOROLA

摩托罗拉

GAAS INFRARED EMITTING DIODE

文件:610.23 Kbytes Page:5 Pages

QT

K4N26产品属性

  • 类型

    描述

  • 型号

    K4N26

  • 制造商

    KODENSHI

  • 制造商全称

    KODENSHI KOREA CORP.

  • 功能描述

    Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting)

更新时间:2026-3-17 21:20:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
K4N26323AE-GC22
25+
1792
1792
SAM
23+
NA
546
专做原装正品,假一罚百!
SAMSUNG
25+
BGA
2987
只售原装自家现货!诚信经营!欢迎来电!
SAMSUNG
22+
BGA
8000
原装正品支持实单
SAMSUNG
25+
BGA
4500
全新原装、诚信经营、公司现货销售
SAMSUNG
23+
BGA
6500
绝对全新原装!现货!特价!请放心订购!
SAMSUNG
02/03+
BGA
1982
全新原装100真实现货供应
SAMSUNG
BGA1313
68500
一级代理 原装正品假一罚十价格优势长期供货
23+
BGA
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
A
24+
DIP-6
8

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