GENERAL DESCRIPTION

FOR 1M x 32Bit x 4 Bank GDDR2 SDRAM

The 4Mx32 GDDR2 is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 1,048,976 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 4GB/s/chip. I/O transactions are possible on both edges of the clock cycle. Range of operating frequencies, and programmable latencies allow the device to be useful for a variety of high performance memory system applications.

FEATURES

• 2.5V + 0.1V power supply for device operation

• 1.8V + 0.1V power supply for I/O interface

• On-Die Termination for all inputs except CKE,ZQ

• Output Driver Strength adjustment by EMRS

• SSTL_18 compatible inputs/outputs

• 4 banks operation

• MRS cycle with address key programs

- CAS latency : 5, 6, 7 (clock)

- Burst length : 4 only

- Burst type : sequential only

• Additive latency (AL): 0,1(clock)

• Read latency(RL) : CL+AL

• Write latency(WL) : AL+1

• Differential Data Strobes for Data-in, Date out ;

- 4 DQS and /DQS(one differential strobe per byte)

- Single Data Strobes by EMRS.

• Edge aligned data & data strobe output

• Center aligned data & data strobe input

• DM for write masking only

• Auto & Self refresh

• 32ms refresh period (4K cycle) (16ms is under consideration)

• 144 Ball FBGA

• Maximum clock frequency up to 500MHz

• Maximum data rate up to 1Gbps/pin

• DLL for Address, CMD and outputs