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型号 功能描述 生产厂家 企业 LOGO 操作
K4N25H

Photocoupler(These Photocouplers cosist of a Gallium Arsenide Infrared Emitting)

Photocoupler These Photocouplers cosist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Phototransistor in a 6-pin package. FEATURES • TTL Compatible Output • Collector-Emitter Voltage : Min.50V • Current Transfer Ratio : Typ.100 (at IF=5mA, VCE=5V) • Electric

KODENSHI

可天士

K4N25H

Photocoupler(These Photocouplers cosist of a Gallium Arsenide Infrared Emitting)

KODENSHI

可天士

6-Pin DIP Optoisolators Transistor Output

The4N25/A, 4N26, 4N27 and 4N28 devices consist of a gallium arsenide infraredemitting diode optically coupled to amonolithic silicon phototransistor detector. • Most Economical Optoisolator Choice for Medium Speed, Switching Applications • Meets or Exceeds All JEDEC Registered Specific

MOTOROLA

摩托罗拉

6-Pin DIP Optoisolators Transistor Output

The4N25/A, 4N26, 4N27 and 4N28 devices consist of a gallium arsenide infraredemitting diode optically coupled to amonolithic silicon phototransistor detector. • Most Economical Optoisolator Choice for Medium Speed, Switching Applications • Meets or Exceeds All JEDEC Registered Specific

MOTOROLA

摩托罗拉

Optocoupler with Phototransistor Output

Description The 4N25(G)V/ 4N35(G)V series consists of a photo transistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and

VISHAYVishay Siliconix

威世威世科技公司

6-Pin DIP Optoisolators Transistor Output

The M4N25 device consists of a gallium arsenide infrared emitting diode optically coupled to a silicon NPN phototransistor detector. • Most Economical Optoisolator Choice for Medium Speed, Switching Applications • Meets or Exceeds All JEDEC Registered Specifications Applications • General Purp

MOTOROLA

摩托罗拉

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

■ TYPICAL RDS(on) = 0.7 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ APPLICATION ORIENTED CHARACTERIZATION ■ THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”) ■ SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE &

STMICROELECTRONICS

意法半导体

K4N25H产品属性

  • 类型

    描述

  • 型号

    K4N25H

  • 制造商

    KODENSHI

  • 制造商全称

    KODENSHI KOREA CORP.

  • 功能描述

    Photocoupler(These Photocouplers cosist of a Gallium Arsenide Infrared Emitting)

更新时间:2026-3-18 9:17:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SAMSUNG
02/03+
BGA
1982
全新原装100真实现货供应
K4N26323AE-GC20
25+
708
708
SAMSUNG
25+
BGA
4500
全新原装、诚信经营、公司现货销售
SAMSUNG
09+
BGA
5500
原装无铅,优势热卖
SAMSUNG
24+
BGA
35200
一级代理/放心采购
SAMSUNG
03+
BGA
398
SASUMNG
23+
BGA
7000
SAMSUNG
22+
BGA
8000
原装正品支持实单
SAMSUNG
24+
BGA
20000
低价现货抛售(美国 香港 新加坡)
SAMSUNG/三星
23+
BGA
89630
当天发货全新原装现货

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