512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)

Key Features • VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333 • VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400 • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16) • Four banks operation • Dif

512Mb D-die DDR SDRAM Specification

Key Features • VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333 • VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400 • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16) • Four banks operation • Dif

512Mb B-die DDR SDRAM Specification

文件：392.89 Kbytes Page：24 Pages

512Mb B-die DDR SDRAM Specification

文件：392.89 Kbytes Page：24 Pages

512Mb B-die DDR SDRAM Specification 54 sTSOP-II (400mil x 441mil)

文件：353.57 Kbytes Page：24 Pages

512Mb B-die DDR SDRAM Specification 54 sTSOP-II (400mil x 441mil)

文件：353.57 Kbytes Page：24 Pages

512Mb B-die DDR SDRAM Specification 54 sTSOP-II (400mil x 441mil)

文件：353.57 Kbytes Page：24 Pages