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位置：首页 > IC中文资料第6075页 > K4H510838B

型号 功能描述 生产厂家&企业 LOGO 操作
K4H510838B-TC/LA2

512MbB-dieDDRSDRAMSpecification

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Differentialcl

SamsungSamsung Group

三星三星半导体

Samsung
K4H510838B-TC/LB0

512MbB-dieDDRSDRAMSpecification

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Differentialcl

SamsungSamsung Group

三星三星半导体

Samsung
K4H510838B-TC/LB3

512MbB-dieDDRSDRAMSpecification

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Differentialcl

SamsungSamsung Group

三星三星半导体

Samsung
K4H510838B-TC/LCC

512MbB-dieDDRSDRAMSpecification

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Differentialcl

SamsungSamsung Group

三星三星半导体

Samsung
K4H510838B-TCA0

128MbDDRSDRAM

Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Fourbanksoperation •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwithCKtransition •MRScyclewithaddresskeyprograms -.Readlatency2,2.5(

SamsungSamsung Group

三星三星半导体

Samsung
K4H510838B-TCA2

128MbDDRSDRAM

Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Fourbanksoperation •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwithCKtransition •MRScyclewithaddresskeyprograms -.Readlatency2,2.5(

SamsungSamsung Group

三星三星半导体

Samsung
K4H510838B-TCB0

128MbDDRSDRAM

Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Fourbanksoperation •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwithCKtransition •MRScyclewithaddresskeyprograms -.Readlatency2,2.5(

SamsungSamsung Group

三星三星半导体

Samsung
K4H510838B-TLA0

128MbDDRSDRAM

Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Fourbanksoperation •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwithCKtransition •MRScyclewithaddresskeyprograms -.Readlatency2,2.5(

SamsungSamsung Group

三星三星半导体

Samsung
K4H510838B-TLA2

128MbDDRSDRAM

Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Fourbanksoperation •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwithCKtransition •MRScyclewithaddresskeyprograms -.Readlatency2,2.5(

SamsungSamsung Group

三星三星半导体

Samsung
K4H510838B-TLB0

128MbDDRSDRAM

Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Fourbanksoperation •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwithCKtransition •MRScyclewithaddresskeyprograms -.Readlatency2,2.5(

SamsungSamsung Group

三星三星半导体

Samsung
K4H510838B-UC/LA2

512MbB-dieDDRSDRAMSpecification

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Differentialcl

SamsungSamsung Group

三星三星半导体

Samsung
K4H510838B-UC/LB0

512MbB-dieDDRSDRAMSpecification

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Differentialcl

SamsungSamsung Group

三星三星半导体

Samsung
K4H510838B-UC/LB3

512MbB-dieDDRSDRAMSpecification

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Differentialcl

SamsungSamsung Group

三星三星半导体

Samsung
K4H510838B-UC/LCC

512MbB-dieDDRSDRAMSpecification

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Differentialcl

SamsungSamsung Group

三星三星半导体

Samsung
K4H510838B-GC/LA2

512MbB-dieDDRSDRAMSpecification

文件：392.89 Kbytes Page：24 Pages

SamsungSamsung Group

三星三星半导体

Samsung
K4H510838B-GC/LB0

512MbB-dieDDRSDRAMSpecification

文件：392.89 Kbytes Page：24 Pages

SamsungSamsung Group

三星三星半导体

Samsung
K4H510838B-GC/LB3

512MbB-dieDDRSDRAMSpecification

文件：392.89 Kbytes Page：24 Pages

SamsungSamsung Group

三星三星半导体

Samsung
K4H510838B-GC/LCC

512MbB-dieDDRSDRAMSpecification

文件：392.89 Kbytes Page：24 Pages

SamsungSamsung Group

三星三星半导体

Samsung
K4H510838B-N

512MbB-dieDDRSDRAMSpecification54sTSOP-II(400milx441mil)

文件：353.57 Kbytes Page：24 Pages

SamsungSamsung Group

三星三星半导体

Samsung
K4H510838B-NC/LA2

512MbB-dieDDRSDRAMSpecification54sTSOP-II(400milx441mil)

文件：353.57 Kbytes Page：24 Pages

SamsungSamsung Group

三星三星半导体

Samsung
K4H510838B-NC/LB0

512MbB-dieDDRSDRAMSpecification54sTSOP-II(400milx441mil)

文件：353.57 Kbytes Page：24 Pages

SamsungSamsung Group

三星三星半导体

Samsung
K4H510838B-NC/LB3

512MbB-dieDDRSDRAMSpecification54sTSOP-II(400milx441mil)

文件：353.57 Kbytes Page：24 Pages

SamsungSamsung Group

三星三星半导体

Samsung
K4H510838B-NC/LCC

512MbB-dieDDRSDRAMSpecification54sTSOP-II(400milx441mil)

文件：353.57 Kbytes Page：24 Pages

SamsungSamsung Group

三星三星半导体

Samsung
K4H510838B-VC/LA2

512MbB-dieDDRSDRAMSpecification54sTSOP-II(400milx441mil)

文件：353.57 Kbytes Page：24 Pages

SamsungSamsung Group

三星三星半导体

Samsung
K4H510838B-VC/LB0

512MbB-dieDDRSDRAMSpecification54sTSOP-II(400milx441mil)

文件：353.57 Kbytes Page：24 Pages

SamsungSamsung Group

三星三星半导体

Samsung
K4H510838B-VC/LB3

512MbB-dieDDRSDRAMSpecification54sTSOP-II(400milx441mil)

文件：353.57 Kbytes Page：24 Pages

SamsungSamsung Group

三星三星半导体

Samsung
K4H510838B-VC/LCC

512MbB-dieDDRSDRAMSpecification54sTSOP-II(400milx441mil)

文件：353.57 Kbytes Page：24 Pages

SamsungSamsung Group

三星三星半导体

Samsung
K4H510838B-ZC/LA2

512MbB-dieDDRSDRAMSpecification

文件：392.89 Kbytes Page：24 Pages

SamsungSamsung Group

三星三星半导体

Samsung
K4H510838B-ZC/LB0

512MbB-dieDDRSDRAMSpecification

文件：392.89 Kbytes Page：24 Pages

SamsungSamsung Group

三星三星半导体

Samsung
K4H510838B-ZC/LB3

512MbB-dieDDRSDRAMSpecification

文件：392.89 Kbytes Page：24 Pages

SamsungSamsung Group

三星三星半导体

Samsung
K4H510838B-ZC/LCC

512MbB-dieDDRSDRAMSpecification

文件：392.89 Kbytes Page：24 Pages

SamsungSamsung Group

三星三星半导体

Samsung

K4H510838B产品属性

  • 类型

    描述

  • 型号

    K4H510838B

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    512Mb B-die DDR SDRAM Specification

K4H510838B供应商更多...

更新时间：2024-6-17 18:47:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市科恒伟业电子有限公司
K4H510838B-ZCB3
SAMSUNG
2016+
FBGA
6528
只做进口原装现货!或订货,假一赔十!
询价
深圳市赛美科科技有限公司
K4H510838B-UCCC
SAMSUNG
TSOP66
53650
一级代理 原装正品假一罚十价格优势长期供货
询价
深圳市航宇科工半导体有限公司
K4H510838B-ZCB3
SAMSUNG
23+
NA
1857
航宇科工半导体-中国航天科工集团战略合作伙伴!
询价
深圳市杰顺创科技有限公司
K4H510838B-ZCB3
SAMSUNG/三星
19+
BGA
12656
进口原装现货
询价
深圳市英科美电子有限公司
K4H510838B-UCCC
SAMSUNG
2021+
TSOP66
6036
百分百原装正品
询价
深圳市胜彬电子有限公司
K4H510838B-UCB3
SAMSUNG
22+
TSOP
8000
原装正品支持实单
询价
贸泽芯城（深圳）电子科技有限公司
K4H510838B-ZCCC
SAMSUNG/三星
FBGA
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
瀚佳科技(深圳)有限公司
K4H510838B-TLA2
SAMSUNG
21+
35200
一级代理/放心采购
询价
深圳市维尔达电子有限公司
K4H510838B-TLA2
SAMSUNG
2023+
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
艾睿国际（香港）有限公司
K4H510838B-ZCB3
SAMSUNG/三星
2021+
FBGA
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价

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