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型号	功能描述	生产厂家企业	LOGO
K4H510838B-TC/LA2	512Mb B-die DDR SDRAM Specification Key Features • VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333 • VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400 • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16) • Four banks operation • Differential cl	Samsung 三星	Samsung
K4H510838B-TC/LB0	512Mb B-die DDR SDRAM Specification Key Features • VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333 • VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400 • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16) • Four banks operation • Differential cl	Samsung 三星	Samsung
K4H510838B-TC/LB3	512Mb B-die DDR SDRAM Specification Key Features • VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333 • VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400 • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16) • Four banks operation • Differential cl	Samsung 三星	Samsung
K4H510838B-TC/LCC	512Mb B-die DDR SDRAM Specification Key Features • VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333 • VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400 • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16) • Four banks operation • Differential cl	Samsung 三星	Samsung
K4H510838B-TCA0	128Mb DDR SDRAM Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latency 2, 2.5 (	Samsung 三星	Samsung
K4H510838B-TCA2	128Mb DDR SDRAM Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latency 2, 2.5 (	Samsung 三星	Samsung
K4H510838B-TCB0	128Mb DDR SDRAM Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latency 2, 2.5 (	Samsung 三星	Samsung
K4H510838B-TCSLASHLA2	512Mb B-die DDR SDRAM Specification Key Features • VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333 • VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400 • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16) • Four banks operation • Differential cl	Samsung 三星	Samsung
K4H510838B-TCSLASHLB0	512Mb B-die DDR SDRAM Specification Key Features • VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333 • VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400 • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16) • Four banks operation • Differential cl	Samsung 三星	Samsung
K4H510838B-TCSLASHLB3	512Mb B-die DDR SDRAM Specification Key Features • VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333 • VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400 • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16) • Four banks operation • Differential cl	Samsung 三星	Samsung
K4H510838B-TCSLASHLCC	512Mb B-die DDR SDRAM Specification Key Features • VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333 • VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400 • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16) • Four banks operation • Differential cl	Samsung 三星	Samsung
K4H510838B-TLA0	128Mb DDR SDRAM Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latency 2, 2.5 (	Samsung 三星	Samsung
K4H510838B-TLA2	128Mb DDR SDRAM Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latency 2, 2.5 (	Samsung 三星	Samsung
K4H510838B-TLB0	128Mb DDR SDRAM Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latency 2, 2.5 (	Samsung 三星	Samsung
K4H510838B-UC/LA2	512Mb B-die DDR SDRAM Specification Key Features • VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333 • VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400 • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16) • Four banks operation • Differential cl	Samsung 三星	Samsung
K4H510838B-UC/LB0	512Mb B-die DDR SDRAM Specification Key Features • VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333 • VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400 • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16) • Four banks operation • Differential cl	Samsung 三星	Samsung
K4H510838B-UC/LB3	512Mb B-die DDR SDRAM Specification Key Features • VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333 • VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400 • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16) • Four banks operation • Differential cl	Samsung 三星	Samsung
K4H510838B-UC/LCC	512Mb B-die DDR SDRAM Specification Key Features • VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333 • VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400 • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16) • Four banks operation • Differential cl	Samsung 三星	Samsung
K4H510838B-UCSLASHLA2	512Mb B-die DDR SDRAM Specification Key Features • VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333 • VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400 • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16) • Four banks operation • Differential cl	Samsung 三星	Samsung
K4H510838B-UCSLASHLB0	512Mb B-die DDR SDRAM Specification Key Features • VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333 • VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400 • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16) • Four banks operation • Differential cl	Samsung 三星	Samsung
K4H510838B-UCSLASHLB3	512Mb B-die DDR SDRAM Specification Key Features • VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333 • VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400 • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16) • Four banks operation • Differential cl	Samsung 三星	Samsung
K4H510838B-UCSLASHLCC	512Mb B-die DDR SDRAM Specification Key Features • VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333 • VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400 • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16) • Four banks operation • Differential cl	Samsung 三星	Samsung
K4H510838B-GC/LA2	512Mb B-die DDR SDRAM Specification 文件：392.89 Kbytes Page：24 Pages	Samsung 三星	Samsung
K4H510838B-GC/LB0	512Mb B-die DDR SDRAM Specification 文件：392.89 Kbytes Page：24 Pages	Samsung 三星	Samsung
K4H510838B-GC/LB3	512Mb B-die DDR SDRAM Specification 文件：392.89 Kbytes Page：24 Pages	Samsung 三星	Samsung
K4H510838B-GC/LCC	512Mb B-die DDR SDRAM Specification 文件：392.89 Kbytes Page：24 Pages	Samsung 三星	Samsung
K4H510838B-GCSLASHLA2	512Mb B-die DDR SDRAM Specification 文件：392.89 Kbytes Page：24 Pages	Samsung 三星	Samsung
K4H510838B-GCSLASHLB0	512Mb B-die DDR SDRAM Specification 文件：392.89 Kbytes Page：24 Pages	Samsung 三星	Samsung
K4H510838B-GCSLASHLB3	512Mb B-die DDR SDRAM Specification 文件：392.89 Kbytes Page：24 Pages	Samsung 三星	Samsung
K4H510838B-GCSLASHLCC	512Mb B-die DDR SDRAM Specification 文件：392.89 Kbytes Page：24 Pages	Samsung 三星	Samsung
K4H510838B-N	512Mb B-die DDR SDRAM Specification 54 sTSOP-II (400mil x 441mil) 文件：353.57 Kbytes Page：24 Pages	Samsung 三星	Samsung
K4H510838B-N	512Mb B-die DDR SDRAM Specification 54 sTSOP-II (400mil x 441mil)	Samsung 三星	Samsung
K4H510838B-NC/LA2	512Mb B-die DDR SDRAM Specification 54 sTSOP-II (400mil x 441mil) 文件：353.57 Kbytes Page：24 Pages	Samsung 三星	Samsung
K4H510838B-NC/LB0	512Mb B-die DDR SDRAM Specification 54 sTSOP-II (400mil x 441mil) 文件：353.57 Kbytes Page：24 Pages	Samsung 三星	Samsung
K4H510838B-NC/LB3	512Mb B-die DDR SDRAM Specification 54 sTSOP-II (400mil x 441mil) 文件：353.57 Kbytes Page：24 Pages	Samsung 三星	Samsung
K4H510838B-NC/LCC	512Mb B-die DDR SDRAM Specification 54 sTSOP-II (400mil x 441mil) 文件：353.57 Kbytes Page：24 Pages	Samsung 三星	Samsung
K4H510838B-NCSLASHLA2	512Mb B-die DDR SDRAM Specification 54 sTSOP-II (400mil x 441mil) 文件：353.57 Kbytes Page：24 Pages	Samsung 三星	Samsung
K4H510838B-NCSLASHLB0	512Mb B-die DDR SDRAM Specification 54 sTSOP-II (400mil x 441mil) 文件：353.57 Kbytes Page：24 Pages	Samsung 三星	Samsung
K4H510838B-NCSLASHLB3	512Mb B-die DDR SDRAM Specification 54 sTSOP-II (400mil x 441mil) 文件：353.57 Kbytes Page：24 Pages	Samsung 三星	Samsung
K4H510838B-NCSLASHLCC	512Mb B-die DDR SDRAM Specification 54 sTSOP-II (400mil x 441mil) 文件：353.57 Kbytes Page：24 Pages	Samsung 三星	Samsung
K4H510838B-VC/LA2	512Mb B-die DDR SDRAM Specification 54 sTSOP-II (400mil x 441mil) 文件：353.57 Kbytes Page：24 Pages	Samsung 三星	Samsung
K4H510838B-VC/LB0	512Mb B-die DDR SDRAM Specification 54 sTSOP-II (400mil x 441mil) 文件：353.57 Kbytes Page：24 Pages	Samsung 三星	Samsung
K4H510838B-VC/LB3	512Mb B-die DDR SDRAM Specification 54 sTSOP-II (400mil x 441mil) 文件：353.57 Kbytes Page：24 Pages	Samsung 三星	Samsung
K4H510838B-VC/LCC	512Mb B-die DDR SDRAM Specification 54 sTSOP-II (400mil x 441mil) 文件：353.57 Kbytes Page：24 Pages	Samsung 三星	Samsung
K4H510838B-VCSLASHLA2	512Mb B-die DDR SDRAM Specification 54 sTSOP-II (400mil x 441mil) 文件：353.57 Kbytes Page：24 Pages	Samsung 三星	Samsung
K4H510838B-VCSLASHLB0	512Mb B-die DDR SDRAM Specification 54 sTSOP-II (400mil x 441mil) 文件：353.57 Kbytes Page：24 Pages	Samsung 三星	Samsung
K4H510838B-VCSLASHLB3	512Mb B-die DDR SDRAM Specification 54 sTSOP-II (400mil x 441mil) 文件：353.57 Kbytes Page：24 Pages	Samsung 三星	Samsung
K4H510838B-VCSLASHLCC	512Mb B-die DDR SDRAM Specification 54 sTSOP-II (400mil x 441mil) 文件：353.57 Kbytes Page：24 Pages	Samsung 三星	Samsung
K4H510838B-ZC/LA2	512Mb B-die DDR SDRAM Specification 文件：392.89 Kbytes Page：24 Pages	Samsung 三星	Samsung
K4H510838B-ZC/LB0	512Mb B-die DDR SDRAM Specification 文件：392.89 Kbytes Page：24 Pages	Samsung 三星	Samsung
K4H510838B-ZC/LB3	512Mb B-die DDR SDRAM Specification 文件：392.89 Kbytes Page：24 Pages	Samsung 三星	Samsung
K4H510838B-ZC/LCC	512Mb B-die DDR SDRAM Specification 文件：392.89 Kbytes Page：24 Pages	Samsung 三星	Samsung
K4H510838B-ZCSLASHLA2	512Mb B-die DDR SDRAM Specification 文件：392.89 Kbytes Page：24 Pages	Samsung 三星	Samsung
K4H510838B-ZCSLASHLB0	512Mb B-die DDR SDRAM Specification 文件：392.89 Kbytes Page：24 Pages	Samsung 三星	Samsung
K4H510838B-ZCSLASHLB3	512Mb B-die DDR SDRAM Specification 文件：392.89 Kbytes Page：24 Pages	Samsung 三星	Samsung
K4H510838B-ZCSLASHLCC	512Mb B-die DDR SDRAM Specification 文件：392.89 Kbytes Page：24 Pages	Samsung 三星	Samsung

K4H510838B产品属性

类型
描述
型号
K4H510838B
制造商
SAMSUNG
制造商全称
Samsung semiconductor
功能描述
512Mb B-die DDR SDRAM Specification

K4H510838B供应商更多...

更新时间：2026-1-4 19:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市华睿芯科技有限公司	K4H510838C-UCB3	SAMSUNG	24+	TSOP	20000	全新原厂原装，进口正品现货，正规渠道可含税！！	询价
深圳市赛美科科技有限公司	K4H510838B-UCCC	SAMSUNG		TSOP66	53650	一级代理原装正品假一罚十价格优势长期供货	询价
深圳市益百分电子有限公司	K4H510838C-UCB3	SAMSUNG	06+	TSOP66	2210	全新原装进口自己库存优势	询价
深圳市诺美思科技有限公司	K4H510838C-UCB3	SAMSUNG/三星		原厂封装	9800	原装进口公司现货假一赔百	询价
深圳市宝芯创电子有限公司	K4H510838C-UCB3	SAMSUNG/三星	18+	TSSOP	11919	全新原装现货,可出样品,可开增值税发票	询价
深圳市欧立现代科技有限公司	K4H510838C-UCB3	SAMSUNG	24+	TSOP	6980	原装现货,可开13%税票	询价
深圳市昌和盛利电子有限公司	K4H510838C-UCB3	SAM	NEW	TSOP	28610	代理全系列销售,全新原装正品,价格优势,长期供应,量大可订	询价
深圳市胜彬电子有限公司	K4H510838B-UCB3	SAMSUNG	22+	TSOP	8000	原装正品支持实单	询价
上海鑫科润电子科技有限公司	K4H510838C-UCB3	SAMSUNG	06+	TSOP/66	55	原装现货海量库存欢迎咨询	询价
深圳市向鸿伟业电子有限公司	K4H510838C-UCB3	SAMSUNG/三星	2402+	TSOP-66	8324	原装正品!实单价优!	询价

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K4H510838B产品属性

K4H510838B供应商更多...

K4H510838B芯片相关品牌

K4H510838B规格书下载地址

K4H510838B参数引脚图相关

K4H510838B数据表相关新闻

K4E6E304EB-EGCF

K4FBE3D4HB-KFC

K4F6E3S4HM-MGCJ

K4T1G164QG-BCE7 进口原装，主营军工级IC

K4S641632H-TC30，K4S641632H-UC6，K4SA160822DTC1H，K616V1002CT-12

K4T1G084QJ-BCE7

DdatasheetPDF页码索引