型号 功能描述 生产厂家 企业 LOGO 操作

128Mb DDR SDRAM

Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latency 2, 2.5 (

Samsung

三星

128Mb DDR SDRAM

Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latency 2, 2.5 (

Samsung

三星

128Mb DDR SDRAM

Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latency 2, 2.5 (

Samsung

三星

128Mb DDR SDRAM

Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latency 2, 2.5 (

Samsung

三星

128Mb DDR SDRAM

Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latency 2, 2.5 (

Samsung

三星

128Mb DDR SDRAM

Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latency 2, 2.5 (

Samsung

三星

128Mb L-die DDR SDRAM Specification

Consumer Memory

Samsung

三星

Consumer Memory

SDRAM Product Guide Memory Division November 2007

Samsung

三星

128Mb L-die DDR SDRAM Specification

Consumer Memory

Samsung

三星

128Mb L-die DDR SDRAM Specification

Consumer Memory

Samsung

三星

Consumer Memory

SDRAM Product Guide Memory Division November 2007

Samsung

三星

K4H281638E产品属性

  • 类型

    描述

  • 型号

    K4H281638E

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    128Mb DDR SDRAM

更新时间:2026-1-1 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SAMSUNG/三星
24+
NA/
1080
优势代理渠道,原装正品,可全系列订货开增值税票
SAMSUNG/三星
25+
TSOP
996880
只做原装,欢迎来电资询
SAMSUNG
22+
TSOP
8000
原装正品支持实单
SAMSUNG
SSOP
3200
原装长期供货!
HYNIX
24+
TSOP
5000
全新原装正品,现货销售
SAMSUNG/三星
23+
TSOP
98900
原厂原装正品现货!!
SAMSUNG
2023+
TSOP66
50000
原装现货
SAMSUNG
23+
TSOP
8000
只做原装现货
SAMSUNG
23+
TSOP
7000
SAMSUNG
22+
TSSOP66
20000
公司只做原装 品质保障

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