型号 功能描述 生产厂家 企业 LOGO 操作

128Mb DDR SDRAM

Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latency 2, 2.5 (

Samsung

三星

128Mb DDR SDRAM

Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latency 2, 2.5 (

Samsung

三星

128Mb DDR SDRAM

Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latency 2, 2.5 (

Samsung

三星

128Mb DDR SDRAM

Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latency 2, 2.5 (

Samsung

三星

128Mb DDR SDRAM

Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latency 2, 2.5 (

Samsung

三星

128Mb DDR SDRAM

Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latency 2, 2.5 (

Samsung

三星

Consumer Memory

SDRAM Product Guide Memory Division November 2007

Samsung

三星

128Mb L-die DDR SDRAM Specification

Consumer Memory

Samsung

三星

128Mb L-die DDR SDRAM Specification

Consumer Memory

Samsung

三星

128Mb L-die DDR SDRAM Specification

Consumer Memory

Samsung

三星

Consumer Memory

SDRAM Product Guide Memory Division November 2007

Samsung

三星

K4H281638B产品属性

  • 类型

    描述

  • 型号

    K4H281638B

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    128Mb DDR SDRAM

更新时间:2026-1-5 18:02:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SAMSUNG?
24+
SOP?
5000
只做原装正品现货 欢迎来电查询15919825718
SAMSUNG/三星
18+
SOP
21803
全新原装现货,可出样品,可开增值税发票
SAMSUNG
TSOP-66
68500
一级代理 原装正品假一罚十价格优势长期供货
SAM
23+
NA
288
专做原装正品,假一罚百!
SAMSUNG
24+
TSOP
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
SAMSUNG
22+
TSOP66
8000
原装正品支持实单
SAMSUNG/三星
21+
TSOP
10000
原装现货假一罚十
SAMSUNG
24+
TSOP
6980
原装现货,可开13%税票
SAMSUNG
24+
TSOP
35200
原装现货/放心购买
SAMSUNG
23+
DIP8
5000
原装正品,假一罚十

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