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位置：首页 > IC中文资料第6863页 > K4E660812E

型号 功能描述 生产厂家 企业 LOGO 操作
K4E660812E

8M x 8bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional fe

Samsung

三星

K4E660812E-JC/L

8M x 8bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional fe

Samsung

三星

K4E660812E-JCSLASHL

8M x 8bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional fe

Samsung

三星

K4E660812E-TC/L

8M x 8bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional fe

Samsung

三星

K4E660812E-TCSLASHL

8M x 8bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional fe

Samsung

三星

K4E660812E, K4E640812E

8M x 8bit CMOS Dynamic RAM with Extended Data Out Data Sheet

Samsung

三星

K4E660812B

8M x 8bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional fe

Samsung

三星

K4E660812C

8M x 8bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional fe

Samsung

三星

K4E660812E产品属性

  • 类型

    描述

  • 型号

    K4E660812E

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    8M x 8bit CMOS Dynamic RAM with Extended Data Out

K4E660812E供应商更多...

更新时间：2025-11-3 16:32:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市近平电子有限公司
K4E660812E-JC50
SAMSUNG
6000
面议
19
SOP
询价
深圳市一线半导体有限公司
K4E661612B-GL60
SAMSUNG
24+
BGA
1172
询价
贸泽芯城（深圳）电子科技有限公司
K4E661611C-TC50
SAMSUNG/三星
23+
TSOP
5000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
询价
深圳市华来深电子有限公司
K4E661612B-GL60
SAMSUNG
23+
BGA
8560
受权代理!全新原装现货特价热卖!
询价
艾睿（深圳）半导体有限公司
K4E661612B-GL60
SAMSUNG/三星
2447
BGA
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
深圳市昊创电子有限公司
K4E6616120-TC60
SAN
SSOP
2100
优势库存
询价
深圳市佳鑫美电子科技有限公司
K4E661612B-GL60
SAMSUNG
25+
BGA
2140
全新原装!现货特价供应
询价
深圳市威尔健半导体有限公司
K4E661612B-GL60
SAMSUNG/三星
23+
BGA
50000
全新原装正品现货,支持订货
询价
京海半导体(深圳)有限公司
K4E661612B-GL60
SAMSUNG/三星
21+
BGA
10000
原装现货假一罚十
询价

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