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位置：首页 > IC中文资料第6863页 > K4E660812E

型号 功能描述 生产厂家 企业 LOGO 操作
K4E660812E

8M x 8bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional fe

Samsung

三星

K4E660812E-JC/L

8M x 8bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional fe

Samsung

三星

K4E660812E-JCSLASHL

8M x 8bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional fe

Samsung

三星

K4E660812E-TC/L

8M x 8bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional fe

Samsung

三星

K4E660812E-TCSLASHL

8M x 8bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional fe

Samsung

三星

K4E660812E, K4E640812E

8M x 8bit CMOS Dynamic RAM with Extended Data Out Data Sheet

Samsung

三星

K4E660812B

8M x 8bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional fe

Samsung

三星

K4E660812C

8M x 8bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional fe

Samsung

三星

K4E660812E产品属性

  • 类型

    描述

  • 型号

    K4E660812E

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    8M x 8bit CMOS Dynamic RAM with Extended Data Out

K4E660812E供应商更多...

更新时间：2025-12-25 18:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市得捷芯城科技有限公司
K4E661612B-GL60
SAMSUNG/三星
24+
NA/
4419
原装现货,当天可交货,原型号开票
询价
深圳市创新迹电子有限公司
K4E661612B-GL60
SAMSUNG
22+
BGA
20000
公司只做原装 品质保障
询价
深圳市赛美科科技有限公司
K4E661612C-TL50
SAMSUNG
TSOP
68500
一级代理 原装正品假一罚十价格优势长期供货
询价
深圳市昌和盛利电子有限公司
K4E661612C-TL50
SAM
NEW
TSOP
35890
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
询价
深圳市益百分电子有限公司
K4E661612C-TP50
SAMSUNG
TSOP50
0070+
1156
全新原装进口自己库存优势
询价
贸泽芯城（深圳）电子科技有限公司
K4E661611C-TC50
SAMSUNG/三星
23+
TSOP
5000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
询价
深圳市宏世佳电子科技有限公司
K4E661612D-TC50
SAMSUNG
2025+
TSOP
3550
全新原厂原装产品、公司现货销售
询价
深圳市胜彬电子有限公司
K4E661612B-GL60
SAMSUNG
22+
BGA
8000
原装正品支持实单
询价
深圳市昊创电子有限公司
K4E6616120-TC60
SAN
SSOP
2100
优势库存
询价
深圳市星佑电子有限公司
K4E661612C-TL50
SAM
06+
TSOP
1000
自己公司全新库存绝对有货
询价

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